2SC1623 MARKING Search Results

2SC1623

Abstract: 2SC1623-L4
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA

MARKING L5

Abstract: 2SC1623
Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623

Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L6 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"

MARKING l7

Abstract: l4 transistor 2SC1623 MARKING L4 transistor marking L6 L6 TRANSISTOR L6 IC marking L6
Contextual Info: 2SC1623 SOT-23-3L 2SC1623 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 100 mA Collector-base voltage V V(BR)CBO: 60 Operating and storage junction temperature range

Contextual Info: MCC 2SC1623-L5 TM Micro Commercial Components 2SC1623-L6
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1623-L7 Features • • • • • • Halogen free available upon request by adding suffix "-HF"

marking L6

Abstract: npn sot23 l6 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SC1623

Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623L6

Abstract: 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

npn sot23 l6

Abstract: 2SC1623 marking 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC1623-L6

Abstract: marking L6 2SC1623L7 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SC1623 marking

Abstract: 2SC1623
Contextual Info: MCC TM Micro Commercial Components 2SC1623-L6 2SC1623-L7
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High DC Current Gain: hFE=600 Max. V CE=6.0V, IC=1.0mA High voltage: VCEO=50V

2SA812

Abstract: m6 marking transistor sot-23 2SA812M6 2SA812-M6
Contextual Info: 2SA812 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1623 * Collector-Base Voltage :Vcbo= -60V * Excellent Hfe linearity Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃

m6 marking transistor sot-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier

2SA812M6

Abstract: 2SA812 2SC1623
Contextual Info: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage

L6 TRANSISTOR

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

2SA812

Abstract: 2SC1623 2SA812M6
Contextual Info: 2SA812 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * * * Complement to 2SC1623 Collector-Base Voltage :Vcbo= -60V Excellent Hfe linearity 1. 1.BASE 2.EMITTER 3.COLLECTOR ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating 2.4 1.3 Unit Vcbo -60 V Collector-Emitter Voltage

2SC1623

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: hFE = 200 TYP. in millimeters VCE = 6.0 V, IC = 1.0 mA 2.8 ± 0.2 0.4 +0.1 –0.05

2SC1623

Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR NPN FEATURES z High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA z High voltage:VCEO=50V 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

m6 marking transistor sot-23

Abstract: 2SA812 2SC1623 hFE-200 marking m5 m5 marking transistor sot-23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA812 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V 2. EMITTER

Contextual Info: SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • High DC Current Gain: h p E = 200 TYP. VCE = 6 .0 V, lc - 1.0 mA in millimeters • High Voltage: V ceo = 50 V

NEC C11531E

Abstract: 2SA812 2SC1623 C11531E C1984
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA812 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) ) • High Voltage: VCEO = −50 V +0.1

m6 marking transistor sot-23

Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier