2SC17 Search Results

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

2sc1785

Contextual Info: Inchange Semiconductor Product Specification 2SC1785 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2sc1740s

Abstract: 2SC1740SS 2SC1740S S
Contextual Info: 2SC1740S 0.15A , 60V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S Low Cob CLASSIFICATION OF hFE Product-Rank 2SC1740S-Q Range 120~270 REF. 2SC1740S-R

2SC1722

Contextual Info: Inchange Semiconductor Product Specification 2SC1722 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High breakdown voltage ·High transition frequency APPLICATIONS ·Low frequency power amplifier ·TV horizontal/vertical driver PINNING

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

2sc1777

Contextual Info: SavantIC Semiconductor Product Specification 2SC1777 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching

2SC1785

Contextual Info: SavantIC Semiconductor Product Specification 2SC1785 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Power switching applications PINNING see Fig.2 PIN DESCRIPTION 1 Base

2SC1740S

Abstract: 2SC1740S transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SC1740S TRANSISTOR Plastic-Encapsulate Transistors NPN TO-92S FEATURES y Low Cob 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2SC1740 transistor

Abstract: 2SC1740 2SC1740 equivalent 2SC1740 R transistor 2sc1740
Contextual Info: ST 2SC1740 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups Q, R, S and E. according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Case Material: Molded Plastic. Classification Rating 94V-0 2SC1740S NPN Plastic-Encapsulate

Contextual Info: Transistors Medium Power Transistor 32V, 0.5A 2SC2411K/2SC4097/2SC1741S •F e a tu re s 1 ) H ig h ►External d im e n s io n s (U nits: m m ) IcMax. 2SC2411K IcMax. = 0 .5 m A 2) L o w VcE(sat). O p tim a l f o r lo w v o lt ­ a g e o p e ra tio n .

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SC1740S TRANSISTOR Plastic-Encapsulate Transistors NPN TO-92S FEATURES y Low Cob 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

2sc1781

Contextual Info: 2SC17SKH >'J3>NPN I t L T P SILIC O N Wt NPN E PIT A X IA L LT P HIGH FR EQ U EN C Y A M PLIFIER MEDIUM S P E E D SW IT C H IN G ta s « « l . i ì "j 9 ’ E m itte r 2 .^ — \ B a se C o lle c to r *r — X : (C a s e ) (D im en sio n s in mm) (JE D E C

2SC1740SLN

Abstract: 2SA933LN 2SC1740LN 2SA933 R 2SA933SLN 2SA933
Contextual Info: ROHM CO LTD 40E - D 7 0 2 0 ^ h7 > S s ^ $ /T ra n s is to rs DOGStiST 3 BRHM 2S C 1740LN /2S C 1740S LN — 2SC1740LN 2SC1740SLN •m “ T-27- ¿>9 — “ NPN y > ;□ > 1 !^ }$ fi£ 3 titi|tIffl/L o w Freq. Low Noise Amp. Epitaxial Planar NPN Silicon Transistors

2SC1740S

Abstract: 2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SC2412K 2SC4081 2SC4617
Contextual Info: 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S Transistors General Purpose Transistor 50V, 0.15A 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S !External dimensions (Units : mm) 2SC2412K 2SC4081 0.65 0.65 (3) +0.1 0.15 −0.06 (1) Emitter (2) Base ROHM : SMT3 (3) Collector

2SC1708

Abstract: 2SC170 2SC1708A
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC1708A FOR LOW FREQUENCY LOW NOISE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC1708A is a silicon NPN epitaxial type high voltage low frequency Unitmm OUTLINE DRAWING t S.6MAX

2SA1036K

Abstract: 2SA1577 2SA854S 2SC1741S 2SC2411K 2SC4097 SC-72 T146
Contextual Info: 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor 32V, 0.5A 2SC2411K / 2SC4097 / 2SC1741S !External dimensions (Units : mm) 2SC2411K 2SC4097 1.1+0.2 −0.1 1.9±0.2 2.0±0.2 0.8±0.1 2.8±0.2 (3) (3) !Structure Epitaxial planar type NPN silicon transistor

transistor B 560

Abstract: B 560 PNP TRANSISTOR 2sa933as 2SA series transistor 2SA933
Contextual Info: 2SA933AS Transistor, PNP Features Dimensions Units : mm • available in SPT (SC-72) package • general purpose transistor with ^C(max) = ~150 mA, P c ( m a x ) = ^00 mW complementary pair with 2SC1740S • 2SA933AS (SPT) 4 ± 0.2j 2 ±0 ,2 Applications

Contextual Info: Transistors General Purpose Transistor 50V, 0.15A 2SC2412K/2SC4081/2SC4617/2SC1740S •Fe a tu re s 1) Low Cob. C ob = 2.0pF (Typ.) 2) Complements the 2SA1037AK/ 2SA1576A/2SA1774/2SA933AS. •E xte rn a l dimensions (Units: mm) 2SC2412K 2SC4081 r—1 I 0.65 0.65

Contextual Info: 2SC1741S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • large collector current: lc = 500 mA • low collector saturation voltage, which allows low-voltage operation • complementary pair with 2SA854S 2SC1741S (SPT)

Contextual Info: 2SD1949 / 2SD1484K / 2SC1741S 2SC3359S Transistors I M edium Pow er T ran sistor 50V, 0.5A 2S D 1949 / 2SD1484K / 2SC 1741 AS • F eatu res • A b s o l u t e m a x im u m r a tin g s (T a = *2 5 ÌD ) 1 ) High cu rre nt (Ic ^ O . S A ) 2 ) Low VcE{sat). (Typ. 0 .1 V at Ic /Ib = 150/15m A )

2SC1766GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SC1766GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)

2sc1730

Abstract: 2SC1730 L 2sc1730 collector emitter base Tma UHF
Contextual Info: SEC SILICON TRANSISTOR ElfCTRON DEVICE 2SC1730 UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PAC KAG E D IM EN SIO N S The 2SC1730 is an NPN silicon epitaxial transistor intended fo r use in millimeters inches as V H F and U HF oscillators and a V H F m ixer in a tun er o f a T V

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)