2SC1815 2SA1015 Search Results

2SC1815L

Abstract: 2SA1015 2SC1815
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) •

2SA1015

Abstract: 2SC1815 2SC181 Common emitter amplifier 2sc1815 toshiba
Contextual Info: TO SH IBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AMPLIFIER APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS. • • High Breakdown Voltage, High Current Capability : V c e o = 50V (Min.), I q = 150mA (Max.)

2SC1815 2SA1015

Abstract: 2SC1815 2SC1815L 2SA1015L 2SA1015 2sc1815 transistor
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)

2SC1815L

Abstract: 2SC1815
Contextual Info: 2SC1815 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • Unit: mm High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max)

Contextual Info: TO SHIBA 2SC1815 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • High Voltage and High Current : V0 EO = 50V (Min.), 10 = 150mA (Max.)

transistor 2sc1815

Contextual Info: T O SH IB A 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V 0 EO = 50V (Min.), 10 = 150mA (Max.)

2SA1015

Abstract: 2SC1815 2SA1015 GR 2sc1815 toshiba
Contextual Info: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications High voltage and high current: • Unit: mm VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.)

GR 1815

Abstract: sc 1815 2SC1815 2SC181 2SA1015 LC 1815 2sc1815 toshiba
Contextual Info: TOSHIBA 2SC1815 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC1815© Unit in mm AUDIO FREQUENCY VOLTAGE AM PLIFIER APPLICATIONS. LO W NOISE AM PLIFIER APPLICATIONS. • High Breakdown Voltage, High Current Capability : V ceo = 50V (Min.), l£ = 150mA (Max.)

2SC1815

Abstract: 2sc1815 toshiba 2SA1015 toshiba 2sc1815
Contextual Info: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.)

2SC1815

Abstract: 2sc1815 toshiba 2SC1815 DATASHEET 2sc1815 transistor 2sc1815 type toshiba 2SC1815 TOSHIBA NOTE transistor 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: 2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications • Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) · Excellent hFE linearity: hFE (2) = 100 (typ.)

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

RN2226

Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Contextual Info: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package

2SJ74

Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
Contextual Info: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形 名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240  2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015 1

2s*1815 transistor

Abstract: 2SC1815L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . 2SA1015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 2SC1815 * Collector-Base Voltage VCBO=-50v C haracteristic Symbol R ating Unit Collector-Base Voltage Vcbo

2SA1015 GR

Abstract: 2SC1815 2SA1015 2SC1815 2SA1015
Contextual Info: 2SC1815 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC1815 ○ 低周波電圧増幅用 ○ 励振段増幅用 • • • • • 単位: mm 高耐圧でしかも電流容量が大きい。 : VCEO = 50 V (最小), IC = 150 mA (最大)

2sa1015 sot-23

Abstract: 2sc1815 sot-23 2SA1015LT1 2sa1015 2SA1015L 2sa1015 equivalent 2SA1015M
Contextual Info: 2SA1015LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package:SOT-23 * Complement to 2SC1815 * Collector Current : Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating

st 2sc1815

Abstract: st2sc1815 2SA1015 2SC1815 2s*1815 transistor
Contextual Info: ST 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA1015 is recommended.

Contextual Info: UTC 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 1 TO-92 1:EMITTER 2:COLLECTOR 3. BASE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR  FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2SC1815

Abstract: 2SC1815 GR 2SC1815L 2SC1815L Datasheet 2SA1015 103 transistor 2sc1815 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015

2sc1815 transistor

Abstract: 2SC1815 2SC1815 DATASHEET 2SC1815L Datasheet TRANSISTOR BL 100 2SC1815L transistor 2sc1815 2SA1015 2SC1815G BVceo-50V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR „ FEATURES * Collector-Emitter voltage: BVCEO=50V * Collector current up to 150mA * High hFE linearity * Complimentary to UTC 2SA1015