2SC1930 Search Results

2SC1930 Datasheets (12)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
2SC1930		Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet		Scan	PDF	33.3KB	1
2SC1930		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF	77.88KB	1
2SC1930		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF	35.38KB	1
2SC1930		Unknown	Transistor Substitution Data Book 1993		Scan	PDF	36.93KB	1
2SC1930		Unknown	The Japanese Transistor Manual 1981		Scan	PDF	110.04KB	2
2SC1930		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF	88.11KB	1
2SC1930		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF	130.43KB	1
2SC1930A		Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet		Scan	PDF	33.3KB	1
2SC1930A		Unknown	Japanese Transistor Cross References (2S)		Scan	PDF	35.38KB	1
2SC1930A		Unknown	Transistor Substitution Data Book 1993		Scan	PDF	36.93KB	1
2SC1930A		Unknown	The Japanese Transistor Manual 1981		Scan	PDF	110.1KB	2
2SC1930A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF	130.43KB	1

2SC1930 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC1930 Contextual Info: 2SC5171 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : P]i = 200MHz Typ. Complementary to 2SC1930 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage	OCR Scan	2SC5171 200MHz 2SC1930 2SC1930	PDF
2SC144 Abstract: 2SD466 2sc5266 Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
2SC1918 Abstract: 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic Pc (V) (V) (mA) (mW) Electrical characteristics (Ta=25ºC) Tj DC Current Gain hFE fab/ft* Cob ºñ°í VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 150 8 5 1400* 1.2 175 80 14 55 650* 2.8 150 150 5 10 130*	Original	2SC1901 2SC1902 2SC1903 2SC1904 2SC1905 2SC1906 2SC1907 2SC1908 2SC1909 2SC1910 2SC1918 2SC1909 2SC1984 2SC1943 2SC1979 2SC1964 2sc1963 2SC1915 2SC1917 2SC1919	PDF