2SC2120 Y TRANSISTOR Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol

2SA950 PNP

Abstract: 2SA950 2SC2120 35VCEO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

2SC2120

Abstract: 2sC2120 y transistor transistor 2sc2120
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120

Abstract: 2sc2120 equivalent
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120Y

Abstract: 2SC2120 2SC2120-Y
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating

2SA950

Abstract: 2SA95 C 2120 Y Produced by Perfect Crystal Device Technology
Contextual Info: 2SA 950 5/ U D > P N P l£ 9 * î / ? j l ^ h 5 > 5t t 5 > P C T fia ^ IL IC O N PNP EPITAXIAL o Audio Power Amplifier Applications • : hFB=10 0~3 20 B |R 7" 5» J/ » 7 1a . r 1 W O 6b * f> #1 i +0 2SC2120 t a y ?■i) * ft £ £ t "fo Iff Output Applications

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating

2SA950Y

Abstract: 2SA950-Y 2SA950
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2sC2120 transistor
Contextual Info: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S C 2 1 20 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2120) Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High : hpg (1) = 100—320 1 W atts Amplifier Applications. • P n 'm n lp T M iin fn rv i n 9 ftA Q £ il

2SC2120

Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
Contextual Info: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.

2SA950

Abstract: 2SC2120
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Plastic Encapsulate Transistors

Abstract: 2SC2120 2sc2120 equivalent
Contextual Info: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage

IC 7411 DATA SHEET

Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
Contextual Info: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range

Contextual Info: 2SC2120 TOSHIBA TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 7sr ? 1 ? n Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE : hpg (i) = 100-320 1 Watts Amplifier Applications. Complementary to 2SA950 . 5.1 M AX. 0.45 0.55 M A X.

2SC2120

Abstract: ZZ25 2SA950 ZZ25IZI
Contextual Info: TOSHIBA_ 2SC2120 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE • hpE (l) = 100—320 1 Watts Amplifier Applications.

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)