2SC2440J Search Results
2SC2440J Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2SB1463J
Abstract: SC-89
|
Original |
2SB1463J 2SC2440J 2SB1463J SC-89 | |
2SB1463J
Abstract: SC-89
|
Original |
2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 |
Original |
2002/95/EC) 2SB1463J 2SC2440J | |
2SB1463J
Abstract: SC-89
|
Original |
2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 | |
2SB1463J
Abstract: SC-89
|
Original |
2002/95/EC) 2SB1463J 2SC2440J 2SB1463J SC-89 | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification |
Original |
2002/95/EC) 2SB1463J 2SC2440J |