2SC2655 NPN TRANSISTOR Search Results

2SC2655 NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

2SC2655 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C2655 NPN Transistor Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655	PDF
2SC2655 Silicon NPN Epitaxial Type Abstract: 2SA1020 2SC2655 Contextual Info: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VfJE (sat) “ 0.5V (Max.) (If; = lA) • High Speed Switching Time : tgtg^l.O/^s (Typ.)	OCR Scan	2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655	PDF
2SC2655 Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020 Contextual Info: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)	OCR Scan	2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020	PDF
C2655 NPN Transistor Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655	PDF
2SC2655 Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y Contextual Info: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)	OCR Scan	2SC2655 2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y	PDF
2SC2655 Silicon NPN Epitaxial Type Abstract: 2SA1020 2SC2655 Contextual Info: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Unit in mm Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)	OCR Scan	2SC2655 2SA1020. O-92MOD -55-15truments, 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655	PDF
C2655 NPN Transistor Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06	PDF
C2655 NPN Transistor Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655 Contextual Info: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW	Original	2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655	PDF
equivalent 2SC2655 Abstract: 2sc2655 2SC2655 datasheet Contextual Info: 2SC2655 2SC2655 TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃	Original	2SC2655 O-92MOD 500mA equivalent 2SC2655 2sc2655 2SC2655 datasheet	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020	Original	O-92MOD 2SC2655 O-92MOD 2SA1020 500mA	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER	Original	O-92L 2SC2655 O-92L 2SA1020 CHARACTERISTI25â	PDF
2sc2655 Abstract: equivalent 2SC2655 2SA1020 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER	Original	O-92L 2SC2655 O-92L 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number	Original	2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23	PDF
2sc2655 Abstract: equivalent 2SC2655 transistor 2SC2655 Contextual Info: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2655 O-92L 2sc2655 equivalent 2SC2655 transistor 2SC2655	PDF

2sc2655 Abstract: 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L 2SC2655L-x-AE3-R QW-R211-013 2SC2655 NPN Transistor 2SC2655-G Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: tstg=1.0 s (Typ.) Lead-free: 2SC2655L Halogen-free: 2SC2655G	Original	2SC2655 2SC2655L 2SC2655G 2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655-x-T9N-K 2sc2655 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L QW-R211-013 2SC2655 NPN Transistor 2SC2655-G	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage	Original	O-92MOD 2SC2655 O-92MOD 500mA	PDF
Contextual Info: UTC 2SC2655 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V (Max.) High speed switching time tstg=1.0 s (Typ.) 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )	Original	2SC2655 O-92NL QW-R211-013	PDF
2sc2655 Abstract: equivalent 2SC2655 2SA1020 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020	Original	O-92MOD 2SC2655 O-92MOD 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020	PDF
2sc2655 Abstract: 2c2655 2SC2655L transistor 2SC2655 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE SAT = 0.5V (Max.) High speed switching time tstg=1.0µs (Typ.) 1 TO-92NL *Pb-free plating product number: 2SC2655L	Original	2SC2655 O-92NL 2SC2655L 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655-x-T9N-R 2SC2655L-x-T9N-R 2sc2655 2c2655 2SC2655L transistor 2SC2655	PDF
2sc2655 Abstract: 2SC2655 NPN Transistor equivalent 2SC2655 Contextual Info: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2655 O-92L 2sc2655 2SC2655 NPN Transistor equivalent 2SC2655	PDF
equivalent 2SC2655 Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655 Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2655 equivalent 2SC2655 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655	PDF
equivalent 2SC2655 Abstract: transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92 Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2655 equivalent 2SC2655 transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92	PDF
transistor 2SC2655 Abstract: 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92 Contextual Info: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	2SC2655 transistor 2SC2655 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92	PDF
2sc2655 Abstract: 1345 NPN Contextual Info: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO	Original	2SC2655 O-92MOD 500mA 19-Feb-09 O-92MOD 50Typ 2sc2655 1345 NPN	PDF

2SC2655 NPN TRANSISTOR Search Results

2SC2655 NPN TRANSISTOR Result Highlights (5)

2SC2655 NPN TRANSISTOR Datasheets Context Search

C2655 NPN Transistor

2SC2655 Silicon NPN Epitaxial Type

2SC2655

C2655 NPN Transistor

2SC2655

2SC2655 Silicon NPN Epitaxial Type

C2655 NPN Transistor

C2655 NPN Transistor

equivalent 2SC2655

2sc2655

2sc2655

2sc2655

2sc2655

2sc2655

2sc2655

equivalent 2SC2655

equivalent 2SC2655

transistor 2SC2655

2sc2655