2SC271 Search Results

2SC3340

Abstract: 2SA1324 2SC3339 2SC3426
Contextual Info: —3 10. SUPER MINI PACKAGE SERIES TO-236 MOD./SOT-23 MOD. C/i 1 H CD 3» rS M H n > TRANSISTOR << •c PC (V) (mA) (mW) 50 150 150 70 -700/400 6 V CE (V) >C (mA) (V) •c (mA) >B (mA) (MHz) 0.25/0.3 100 10 (80) NPN l General Purpose 2SC2712 ! High Voltage

hp 2503

Abstract: 2SC2713
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2713 A U D I O FREQ UENC Y G E N E R A L A P P L IC A T IO N S PUR PO SE A M P L IF IE R Unit in mm + 0i5 2.5-0.3 + Û2 5 1.5— a 15 FEATURES : . High Voltage vCEO =120V Od . Excellent hpg Linearity +I ÊE- : hF E 0.1mA /hpE(2mA)=0.95(Typ.)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E 2SC2714 U nit in mm H IG H F R E Q U E N C Y A M P L IF IE R A P P L IC A T IO N S . F M , RF, M IX , IF A M P L IF IE R A P P L IC A T IO N S . +C12 5 1.3-015 FEATURES : • dd +l HO EE­ Small Reverse Transfer Capacitance: Cre = 0.7pF Typ.

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

2sc2712

Abstract: C 029 Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ 3 FEATURES 1 2 * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR 2SC2712 Unit in mm A U D IO FR EQUENCY GENERAL PURPOSE AM PLIFIER APPLIC A TIO N S High Voltage and High Current : Vq eo = 50V, Ic = 150mA Max. • Excellent hj’E Linearity : hfE (Iq = 0.1mA) / hpE (Ic = 2mA) =0.95 (Typ.)

2SC2712

Abstract: C1000-BL 2SA1162 SC 1000 BL
Contextual Info: 2SC2712 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2712 ○ 低周波増幅用 ○ 低周波低雑音用 ○ AM 増幅用 単位: mm • 高耐圧です。 • コレクタ電流が大きい。: IC = 150 mA (最大) •

2SC2710

Abstract: 2SA1150
Contextual Info: 2SC2710 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2710 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • 2SA1150 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

2SA1150

Abstract: 2SC2710
Contextual Info: 2SA1150 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1150 ○ 低周波増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC2710 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)

Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

TRANSISTOR BL 100

Abstract: 2SC2712 3040d
Contextual Info: 2SC2712 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 3 Collector 1 Base *Power Dissipation PCM: 150 mW Tamb=25 oC 2 *Collector Current ICM: 150 mA A *Collector-Base Voltage

transistor toshiba marking hf

Abstract: 2SA1162 2SC2712
Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)

OK304

Abstract: 2sc2216
Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)

2SA1162

Abstract: 2SC2712 2SA1162 PNP
Contextual Info: 2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB Typ. ,10dB (Max.) Base L 3 Complementary to 2SC2712.

2SC2712

Abstract: 2SA1162 sot-23 Marking LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC3258

Abstract: 2SC3950 2SC3209 3918 2SC4116 2sc2562 2SC3958 2SC3874 2SC4211 2SD667
Contextual Info: - £ Type No. 2SC 3927 £ Manuf. ^ H B ft SANYO TOSHIBA -yy'ry 2SC3Q90 2SC4157 2SC 3928 = Ü 2SC2812 2SC2712 2SC 3929 / 2SC4211 2SC4116 2SC4211 2SC4211 2SC 3931 fé T fé T fé T fé T 2SC 3932 fé 2SC 3933 2SC4853 2SC 3935 fé T fé T fé T 2SC 3936 fé T

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

MARKING W2 SOT23 TRANSISTOR

Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)

marking 12Y

Abstract: 12y sot 23 2SA1037 2SC27 2SC2712 Collector 5v npn TRANSISTOR 12Y marking
Contextual Info: 2SC2712 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to 2SA1037 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:V CE =45V 1. 1.BASE 2.EMITTER 3.COLLECTOR High Totalpower Dissipation Pc=225mW High life And Good Linearity

PNP Epitaxial Silicon Transistor sot-23

Abstract: 2SA1037 2SC2712 M6 SOT23-3
Contextual Info: 2SA1037 PNP EPITAXIAL SILICON TRANSISTOR SOT-23 3 LOW FREQRENCY,LOW NOISE AMPLIFIER 1 Complemen to 2SC2712 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:V CE =-45V 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS

2SC2715

Abstract: TRANSISTOR MARKING FA
Contextual Info: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.

10ID

Abstract: 2SC2714 marking 8fb
Contextual Info: TOSHIBA 2 SC2 71 4 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Sm all Reverse Transfer Capacitance : Cre = 0.7pF (Typ.) • Low Noise Figure : NF = 2.5dB (Typ.) (f=100MHz)

10ID

Abstract: 2SC2714
Contextual Info: TO SH IBA 2SC2714 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2714 HIGH FREQUENCY AMPLIFIER APPLICATIONS FM, RF, MIX, IF AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 + • Small Reverse Transfer Capacitance : Cre = 0.7pF (Typ.)