2SC2712-GR LG Search Results

2SC2712

Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.

2SC2712GR

Abstract: 2sc2712
Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.

Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Plastic-Encapsulate Transistors

2SC2712GR

Abstract: 2SC2712 2SC2712Y
Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic. UL Flammability

Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Plastic-Encapsulate Transistors

2SC2712BL

Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

Contextual Info: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates

2SC2712

Abstract: 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

2SC2712

Abstract: 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 3 FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise

2SC2712

Abstract: sot-23 Marking LG MARKING LG Weitron SOT 23 LY j y w sot23
Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

sot-23 Marking LG

Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.

smd transistor LY

Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

sot-23 Marking LG

Abstract: marking LL SOT-23 f1 transistor sot-23 LY SOT-23 SOT 23 LY 2sc2712
Contextual Info: 2SC2712 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Noise: NF=1 dB (Typ),10dB(MAX) — Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V

Contextual Info: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC2712

Abstract: 2SA1162 sot-23 Marking LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC2712 Features • • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Case Material: Molded Plastic.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE 2. EMITTER TRANSISTOR NPN 3. COLLECTOR 150 2. 4 1. 3 mW (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 150 mA ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ FEATURE Power dissipation PCM : 150mW（Tamb=25℃）