2SC278 Search Results

2SC2788

Contextual Info: Inchange Semiconductor Product Specification 2SC2788 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN

33PFX4

Abstract: 2SC2782 NPN 2SC2782 transistor 2sc2782 18W 12 transistor 1BW TRANSISTOR 10ID 10A ferrite bead 132pF 156pF
Contextual Info: TO SHIBA 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm Output Power : Po = 80W Min. (f= 175MHz, V e e = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING

NPN 2SC2782

Abstract: transistor 2sc2782 2SC2782
Contextual Info: 2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W Min. (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage

2SC2784

Contextual Info: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2786

Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors manufactured in different pin configurations.

2SC2786

Abstract: S9015LT1
Contextual Info: 2SC2786 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW * High Hfe And Good Linearity 1. ABSOLUTE MAXIMUM RATINGS at Ta=25

Contextual Info: 2SC2783 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)36 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

D1351

Abstract: 2SC2785 LHI 648 transistor C982 MA 7824 CI 4011 ES0276 2SA1175 2SC278 ditty
Contextual Info: 5 s — 5 ? • S / — h Silicon Transistor 2SC2785 4« # f f i : nun » o t ë ü & it t is , fö ü & X 'f 7 f > / , 100 m A £ ? 0 0 & í í 2,0 ±0,2 4.0 ± 0 .ï t i x f ò m ? £ t t 0 0 # » Œ T , HF E ^ V C EO : 50 ^ ^ n - C v ^ 1 - 0 u V hpEÍO.l m A ) / h FE(1.0 mA) : 0.92(TYP.)

2SC2784

Abstract: T460-8525 transistor 2 FC 945
Contextual Info: "T — S • S /— h '> < ; = ! > h 9 S illic o n T r a n s is t o r 2SC2784 N P N i + 1J =3 > h ^ W-MM -¥•££ ^ mm O f ii8 X T l/ t i0 3 > et i m îu î s ü r a ü n æ h n — t l y 7 ° ^ x W \ ^ m i% , /s” 7 — T > ~ f < T ) - c s a t - r „

2SC2785

Contextual Info: ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1174

Abstract: 2SC2784 RA03 VCE-60
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC2784 The 2SC2784 isthe best fo r use as the middle range am plifier in PACKAGE DIMENSIONS Hi-Fi stereo control amplifiers, power amplifiers, and etc. FEATURES • High voltage. in millimeters inches 4.2 M A X . V CE0 : 120 V

C2787

Contextual Info: NEC NPN SILICO N TRAN SISTO R ELECTRON DEVICE 2SC2787 DESCRIPTIO N The 2SC2787 is designed fo r use in A M converter, A M /F M IF PAC K A G E D IM E N S IO N S am p lifie r and local oscillator o f A M /F M tuner. in m illim e te rs FE A TU R E S 4 0 ± 0 .2

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SC2780 is designed fo r audio frequency pre a m p lifie r app lica tion, especially in H y b rid Integrated Circuits, FEATURES PACKAGE DIMENSIONS

2SC2780

Abstract: 2SA1173
Contextual Info: SILICON TRANSISTOR 2SC2780 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLO DE SC R IPTIO N The 2SC2780 is designed for audio frequency preamplifier application, especially in Hybrid Integrated Circuits. FE A TU R E S PACKAG E D IM E N S IO N S • World Standard Miniature Package

Contextual Info: 2SC2785 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)50è V(BR)CBO (V)60 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.200 h(FE) Max. Current gain.

10,7mhz

Abstract: 2SC2787
Contextual Info: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2787

Contextual Info: ST 2SC2787 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into three groups M, L, and K according to its DC current gain. On special request, these transistors manufactured in different pin configurations.

2SC2786

Contextual Info: ST 2SC2786 NPN Silicon Epitaxial Planar Transistor for FM RF amplifier and local oscillator of FM tuner. The transistor is subdivided into three groups M, L, and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2785

Abstract: transistor 2sc2785
Contextual Info: ST 2SC2785 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2784

Abstract: transistor amplifier 5v to 6v
Contextual Info: ST 2SC2784 NPN Silicon Epitaxial Planar Transistor Audio frequency low noise amplifier. The transistor is subdivided into four groups, P, F, E and U according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

NEC 2701

Abstract: NEC 2703 2701 NEC NEC 2705 2SC2724 2sc2257 2sc2786 2674 k 2679 2SC2911
Contextual Info: 144 - a s T ype No. € Manuf. 2SC 2663 X 2SC 2665 if y 'r y H $ SANYO 2 2SC 2668 |C 2SC 2669 S 2 2SC 267Û K 2 2SC 2671 * fé T 2SC 2672 a M 2SC 2673 / □ —A 2SC 2674 2SC 2675 2SC2724 2SC2926S 2SC2787 2SC2724 2SC2058S 2SC2724 2SC2058S 2SC3776 2SC3128 2SC 267KH

SMD TRANSISTOR MARKING NK

Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2780 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 • Features 2.50±0.1 4.00±0.1 ● High Collector-emitter voltage. ● Complements to PNP type 2SA1173 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1 0.48±0.1

2SC3199

Abstract: 2SK596 2SA733S 2SC945S 2SK156 2SC2710 2SC2785 2SC2786 2SC2787 2SC3488
Contextual Info: TO-92S PACKAGE MX MICROELECTRONICS ● Applied for TV,AV and buzzers amplifiers. NPN TYPE ICBO OR Ptot Ic VCBO VCEO * ICEO ▲ ICES 2SC3199 2SC1815S 2SC945S 2SC1959S 2SA1015S 2SA733S 2SC2785 2SC2786 2SC2787 2SC3488 2SC2710 2SC1740S 2SC1741S AD825 VCES VCB

C2787

Abstract: 2SC2787
Contextual Info: NEC D E S C R IP T IO N NPN SILICON TRANSISTOR 2SC2787 T he 2 S C 2 7 8 7 is designed fo r use in A M converter, A M /F M IF P A C K A G E D IM E N S IO N S a m p lifie r and local oscillator of A M /F M tuner. in millimeters inches 4.2 M A X . FEATURES