2SC279 Search Results

2SC2791

Contextual Info: SavantIC Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter

2SC2792

Abstract: DC DC converter 50mA 400V
Contextual Info: SavantIC Semiconductor Product Specification 2SC2792 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·High breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulator and high voltage ·Switching applications ·High speed DC-DC converter applications

2SC3941A

Abstract: c3277 2SC3531 2sc3358 2SC3924 2SC3532 2sc3225 2SC3356 2sc3691 2SC3737
Contextual Info: - m % tt Type No. € Manuf. 2SC 3718 = * SANYO JK S TOSHIBA fé T 2SC2791 2SC 3720 fé T 0 Sl □-A 2SC3608 2SC 3722 2SC 3723 S± £ 2SC 3724 *± w i 2SC 3725 ^ 2SC 3726 J' =~ = = s s m æ s i à m / m. 2SC 3727 2SC 3728 2SC 37 29 y 2SC 3730 2SC 37 3 ! 2SC 3732

SC3150

Abstract: c2979 3171 s 2sc3153 2sc4044s 2SD1390 2SC3174 2sc3180n 2SC3344 2sd1335
Contextual Info: - m % tt Type No. £ Manuf. 2SC 3151 =- ft ft 2SC 3152 . s. n 2SC 3 1 5 3 / 3 ft 2 SC 3150 n SANYO TOSHIBA 2SC2792 2SC2792 2SC 3154 X = ft 2SC3151 2SC2790 H n 2SC3152 2SC2790 2SC 3156 ^ = ft 2SC3153 2SC2791 a n B « 2SC3039 2SC3236 2SC 3159 CD 2SC3344 2SC 3160

2SC2797

Abstract: SR1FM transistor power 5w NPN EPITAXIAL PLANAR TYPE 175mhz 1w
Contextual Info: • b2»H flE«ï 0017b? ALT M ITSU BISHI RF PO W ER TR A N SISTO R h 2S C 2 797 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in UHF band. Dim ensions in mm

2SC2792

Contextual Info: TOSHIBA 2SC2792 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times l0 = O.5A tr=1.0/^s Max. tf^l.O/^s Max.

2SC2792

Contextual Info: TO SH IBA 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2792 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • ¿3.2 ±0.2 Excellent Switching Times (l0 = O.5A

Contextual Info: MITSUBISHI DISCRETE SC blE ]> 1,24^05^ GG1SE71 T40 H n iT 5 MITSUBISHI RF POWER TRANSISTOR 2SC2797 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2797 is a silicon NPN epitaxial planar type transistor designed for RF broad-band power amplifiers in U H F band.

Contextual Info: 2SC2797 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175 I(CBO) Max. (A)400uØ @V(CBO) (V) (Test Condition)25

Contextual Info: 2SC2799 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC) Maximum Operating Temp (øC)175 I(CBO) Max. (A)1.5mØ @V(CBO) (V) (Test Condition)25

TRANSISTOR 5804

Abstract: A 3120 2SC2798
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 0ni7fc,24 b32 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 2798 is a silicon NPN epitaxial planar type transistor designed fo r R F broad-band power amplifiers in U H F band. Dim ensions in mm C 1 .5 M A X

2SC2794

Contextual Info: SavantIC Semiconductor Product Specification 2SC2794 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to

Contextual Info: 2SC2792 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)850 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC3420GR

Abstract: 2SC3420Y 2SC2594 2SC3420-BL sm318 2N5025 2N3625 2SC30740 J50G 2sc2270
Contextual Info: RF POWER SILICON NPN Item Part Number Number I C >= 2.5 A, BLX39 BLW86 2SC1075 VTV075 2SC2799 BLV32F BLV95 (A) S01274 S01274-1 5 I(C) 10 15 20 25 40 45 50 55 60 65 70 75 80 85 90 Ic Max fT V(BR)CEO Po Max (A) (Hz) (V) (W) hFE Min Max ICBO Max tr Max tf Max

2SC2792

Abstract: DC DC converter 50mA 400V
Contextual Info: Inchange Semiconductor Product Specification 2SC2792 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P I package ・High breakdown voltage ・Excellent switching times APPLICATIONS ・Switching regulator and high voltage ・Switching applications ・High speed DC-DC converter applications

2SC2794

Contextual Info: Inchange Semiconductor Product Specification 2SC2794 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2

Contextual Info: MITSUBISHI DISCRETE SC bSiHflST D015273 fll3 «tlITS blE T> MITSUBISHI RF POWER TRANSISTOR 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2 S C 2 7 9 8 is a s ilic o n N P N e p itaxia l plan ar ty p e t ra n sisto r d e sign e d fo r R F b ro a d -b a n d p o w e r a m p lifie rs in U H F band.

2SC2793

Abstract: npn transistors 400V 3A
Contextual Info: SavantIC Semiconductor Product Specification 2SC2793 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter

NPN 800V

Abstract: 2SC2791
Contextual Info: Inchange Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter

2SC2793

Contextual Info: Inchange Semiconductor Product Specification 2SC2793 Silicon NPN Power Transistors • DESCRIPTION ·With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2791 INDUSTRIAL APPLICATIONS HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. Unit in mm SWITCHING REGULATOR APPLICATIONS. 0 £ 5 . 0 MAX, HIGH SPEED DC-DC CONVERTER APPLICATIONS. 021.0 MAX FEATURES: . Excellent Switching Times

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC2790 Unit in mm S W IT C H IN G REGULATOR AND H IG H VOLTAGE S W IT C H IN G HIG H A P P L IC A T IO N S - SPEED D C -D C CONVERTER A P P L I C A T I O N . FEATURES: . Excellent Switching Times : tr=1.0/xs Max. , tf=1.0/is Max.

Contextual Info: TTTXFItíA i DI SCTCLTE/ OPTOJ Sb DE J t u t I ' di i u UÜ U f’ h U q T y 9097250 TOSHIBA 5òC 07604 D ISC R ETE/O PTO D T' 3 3 ~ ; 3 2SC2793 SILICON NPN TRIPLE DIFFUSED TYPE_ INDUSTRIAL APPLICATION Unit in mm HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS.

Contextual Info: 2SC2798 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)45 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)30# Minimum Operating Temp (øC) Maximum Operating Temp (øC)175 I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition)25