2SC28 Search Results

2SA1184

Abstract: 2sc2824
Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 TOSHIBA 5b CDIS C R E T E / O P T O D E ^ O T O S i: 5 òC 07606 aOOTbDt, û 2SC2824 SILICON NPN E PIT A X IA L TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 7.9MAX. FEATURES: • Complementary to 2SA1184.

2SA1201

Abstract: 2SC2881
Contextual Info: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage

2SC2830

Contextual Info: JMnic Product Specification 2SC2830 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Wide area of safe operation APPLICATIONS ・For switching regulator applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2

2SC2832

Abstract: 2SC2832A ic 3A hfe 500
Contextual Info: JMnic Product Specification 2SC2832 2SC2832A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION

2sa1186

Abstract: 2SC2837 2SA1186 2SC2837
Contextual Info: JMnic Product Specification 2SA1186 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High current capability ・Complement to type 2SC2837 APPLICATIONS ・Audio and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2859 A U D IO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS. U n it in m m DRIVER STAGE AM PLIFIER APPLICATIONS. + 0.5 - 0.3 + 0.25 . 1.5 - 0.15 SW ITCH IN G APPLICATIONS. • • 25 Excellent hpE Linearity : hFE 2 = 25(Min.) (V qe = 6V, Ic = 400mA)

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC2873 Unit in tmn POWER AMPLIFIER APPLICATIONS. 1.6MAX. 4.6MAX. POWER SWITCHING APPLICATIONS. 1.7MAX. r a Q4±Û05 - FEATURES: . Low Saturation Voltage : VCE sat =0.5V(Max.) (Ic-IA) + Q08 Q45-Û05 . High Speed Switching Time : tstg=l.Oa s (Typ.)

693F TRANSISTOR

Abstract: 693F N20J transistor 693f 2SC2814 2SC28H II04A
Contextual Info: SAN YO S E M I C O N D U C T O R CORP TTTTOTb 5SE D OQDbTl? T • ' 3 'I S 2SC2814 ♦ NPN Epitaxial Planar Silicon Transistor 2018A High-Frequency General-Purpose Amp Applications 693F Features . V ery small pack a g e ena b l i n g compactness and slimness of sets.

693F TRANSISTOR

Abstract: 693F transistor 693f 2SC2814 P3NF
Contextual Info: O rdering number : EN 693F _ 2SC2814 N0.693F NPN Epitaxial P lanar Silicon Transistor SANYO High-Frequency General-Purpose Amp Applications I Features . Very small package enabling compactness and slimness of sets. . High fx and small Cre* fT=320MHz typ, cre=0.95pF typ

2SC2841

Abstract: pnp 500v SC-65
Contextual Info: Power Transistors 2 SC2 8 4 1 2SC2841 Silicon PNP Triple-Diffusëd Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features Unit ! mm .lS.Srnax. • 4.7rnax. • High speed switching 2.1max. • High collector-base voltage V cbo

2SC2881L

Abstract: 032 b
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION

2sc2834a

Abstract: 2SC2834
Contextual Info: Inchange Semiconductor Product Specification 2SC2834 2SC2834A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High speed switching ・High VCBO ・Low collector saturation voltage APPLICATIONS ・For high speed switching applications PINNING

2SC2841

Contextual Info: Inchange Semiconductor Product Specification 2SC2841 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION

power transistor audio amplifier 500 watts

Abstract: 2SA1203 smd diode 03A 2SC2883
Contextual Info: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol

2SC2831

Abstract: 2SC2831A
Contextual Info: Inchange Semiconductor Product Specification 2SC2831 2SC2831A Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·High VCBO ·High speed switching APPLICATIONS ·For high speed switching applications PINNING

2SA1204

Abstract: 2SC2884
Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

Contextual Info: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

2SA1189

Abstract: Hitachi DSA0097 2SA1188 2SA1190 2SA1191 2SC2853 2SC2854
Contextual Info: 2SA1188, 2SA1189 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2853 and 2SC2854 Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA1188, 2SA1189 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1188

2SC2816

Contextual Info: SavantIC Semiconductor Product Specification 2SC2816 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·High speed APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base

2SC2815

Contextual Info: SavantIC Semiconductor Product Specification 2SC2815 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits

2SC2830

Contextual Info: SavantIC Semiconductor Product Specification 2SC2830 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING See Fig.2 PIN DESCRIPTION

2sc2810

Contextual Info: SavantIC Semiconductor Product Specification 2SC2810 Silicon NPN Power Transistors •Wit DESCRIPTION With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base