2SC2983 Search Results

2SC2983

Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC2983 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.25 2.65 -0.1 0.127 max +0.28 1.50 -0.1 +0.1 0.80-0.1

Contextual Info: TOSHIBA 2SC2983 T O SH IB A TRA N SISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 Unit in mm PO W ER AM PLIFIER APPLICATIO NS DRIVER STAGE A M PLIFIER APPLICATIO NS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225 M A X IM U M RATINGS (Ta = 25°C)

2SA1225

Abstract: 2SC2983
Contextual Info: TOSHIBA 2SC2983 T O S H IB A T R A N SIST O R SILICON NPN E P IT A X IA L T Y PE PCT PRO CESS 2SC2983 P O W E R A M P L IF IE R A PPLIC A TIO N S D RIV ER STAGE A M P L IF IE R A PPLIC A T IO N S • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SA1225

2SA1225

Abstract: 2SC2983
Contextual Info: 2SA1225 TO SH IBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)

C2983

Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983 A1225
Contextual Info: 2SA1225 TOSHIBA 2 S A 1 225 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : fp = 100 MHz (Typ.) Complementary to 2SC2983 MAXIMUM RATINGS (Ta = 25°C)

2SA1225

Abstract: A1225 2SC2983
Contextual Info: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: 2SC2983
Contextual Info: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TO SH IBA 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS • • High Transition Frequency : Pp = 100 MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Tc = 25°C)

2sa1225

Contextual Info: 2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1225 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SC2983 Unit: mm Maximum Ratings (Ta = 25°C)

2SA1225

Abstract: A1225 2SC2983
Contextual Info: 2SA1225 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1225 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SC2983 とコンプリメンタリになります。

C2983

Abstract: 2SA1225 2SC2983
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)

C2983

Abstract: 2SC2983 2SA1225
Contextual Info: 2SC2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)

Contextual Info: 2SA1225 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 3 Ç A1 11 *5 Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. 6 8 MAX. C. 6 MAX. * • High Transition Frequency : fr= 100MHz (Typ.) Complementary to 2SC2983

Contextual Info: 2SC2983 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2983 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。

Contextual Info: SILICO N NPN EPITAXIAL T Y P E 2SC2983 POWER AMPLIFIER APPLICATIONS. Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency fT=100MHz Typ. . Complementary to 2SA1225 MAXIMUM RATINGS (Ta=25 C) SYMBOL RATING Collector-Base Voltage

2SA122

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1225 POWER AMPLIFIER APPLICATIONS. Unit in nun DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES: . High Transition Frequency : fT=100MHz Typ. . Complementary to 2SC2983 MAXIMUM RATINGS (Ta-25°C) SYMBOL RATING Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 2SC2983 TRANSISTOR NPN TO – 251 FEATURES z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter