2SC32 Search Results

Contextual Info: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)

2SA1302

Abstract: Toshiba 2Sa1302
Contextual Info: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL

2SC3297

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25

2SA1301 TOSHIBA

Contextual Info: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C

2SC3296

Abstract: IC vertical lg
Contextual Info: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SC3257

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE SW ITCH IN G REGULATOR A N D HIGH VOLTAG E SW ITCHIN G APPLICATIONS. 2SC3257 INDUSTRIAL APPLICATIONS Unit in mm 1 0 .3 M A X . HIGH SPEED D C-DC CO NVERTER APPLICATIONS. • • Excellent Switching Times : tr = 1.0/is Max. , tf=1.0/us (Max.) at Iç = 6A

400V INDUSTRIAL voltage regulator

Contextual Info: SILICON NPN T R IP LE DIFFUSED T Y P E SW ITCHIN G REGULATOR A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. HIGH SPEED D C-D C CONVERTER APPLICATIONS. • • 2SC3233 INDUSTRIAL APPLICATIONS Unit in mm 6.8MAX. Excellent Switching Times : tr =1.0//s Max. , tf= 1 .0 / i S (Max.) at Ic = 0.8A

2SA1301

Abstract: 2SC3280 2SA1301
Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1301 POWER AMPLIFIER APPLICATIONS. Unit in mm 2 & 5 MAX. iZS3.3±aZ FEATURES: . Complementary to 2SC3280 . Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C SYMBOL RATING Collector-Base Voltage

2SC3281

Abstract: 100W AUDIO ic AMPLIFIER 2SA1302
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm i 2 0.5 FEATURES: . Complementary to 2SA1302 MAX . 0 3 .3 ± a s oi —I IQ ' . Recommend for 100W High Flderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25 C

2SA1302 transistor

Contextual Info: i TOSHIBA TRANSISTOR n ft SILICON PNP EPITAXIAL TYPE PCT PROCESS ZSA130Z POWER AMPLIFIER APPLICATIONS. Unit in m m 20.5 M A X . FEATURES: 0 3 l3 ± O l2 T . Co mplementary to 2SC3281 . Recommmend for 100W High Fiderity Audio Frequency Amplifier Output Stage.

2SA1306

Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications

2SC3295 - A

Contextual Info: 2SC3295 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • • • High hpE High Voltage High Collector Current Small Packge hpE = 600 ~ 3600 v CEO = 50V IC = 150mA Max. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA1290

Abstract: 2SC3254
Contextual Info: JMnic Product Specification 2SA1290 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Short switching time ・Low collector saturation voltage ・Complement to type 2SC3254 APPLICATIONS ・Various inductance lamp drivers for electrical equipment

2SC3212

Abstract: 2SC3212A
Contextual Info: JMnic Product Specification 2SC3212 2SC3212A Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Low collector saturation voltage ・High VCBO ・High speed switching APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION

Contextual Info: Ordering number:EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SC3294] Features · High DC current gain.

2SA1291

Abstract: 2SC3255
Contextual Info: AOK AOK Semiconductor P ro d u c t S pecification S ilicon PNP P ow er T ransistors 2SA1291 DESCRIPTION • With TO-220 package • Low collector saturation voltage. • Short switching time. • Complement to type 2SC3255 APPLICATIONS • Various inductance lamp drivers for

2SA1291

Contextual Info: ["O rdering number: E N 1201C 2SA1291/2SC3255 N0.I2OIC PN P/N PN Epitaxial P la n ar Silicon Transistors SAW O i 60V/10A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. •Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

2SA1279

Abstract: 2SC3239 IC H 111
Contextual Info: TOSHIBA -CDISCRETE/OPTOl ~5Í DË”! T D T 7ESD □□□7bt,D ñ J 9097250 T O S HIBA bbL C D I S C R E T E /O P T O 07660 - 2 3 - b9 2SC3239 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS.

2SA1289

Abstract: 2SC3253
Contextual Info: Inchange Semiconductor Product Specification 2SA1289 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3253 ·Low saturation voltage ·Short switching time APPLICATIONS ·Various inductance lamp drivers for electrical equipment

2SC3253

Abstract: 2SA1289
Contextual Info: Inchange Semiconductor Product Specification 2SC3253 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Short switching time ·Low collector saturation voltage ·Complement to type 2SA1289 APPLICATIONS ·Various inductance lamp drivers for electrical equipment

2SC3296

Abstract: pnp 500ma 40v 2SA1304
Contextual Info: Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING

2SC3285

Abstract: npn 2a NPN VCEo 1000V 2SC328
Contextual Info: Inchange Semiconductor Product Specification 2SC3285 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High speed switching ·Good linearity of hFE ·High VCBO APPLICATIONS ·For high speed switching applications PINNING see Fig.2 PIN DESCRIPTION

2sc3211

Abstract: 2SC3211A
Contextual Info: Power Transistors 2SC3211, 2SC3211A 2SC3211, 2SC3211A Silicon N P N Triple-D iffused Junction M esa Type P ackage Dim ensions High Breakdown Voltage, High Speed Switching • F eatures • • • • Unit ! mm 5.2max. 3.2 , 15.5 m ax. . 6.9min. High speed switching

2SC3212

Abstract: 2SC3212A
Contextual Info: 2SC3212, 2SC32T2A Power Transistors 2SC3212, 2SC3212A Silicon NPN Triple-Diffused Junction M esa Type P ackage Dim ensions High B reakdown V o ltage, High Sp eed Switching • Features Unit ! mm 5.2max. 15.5max. 6.9min. • H igh s p e e d sw itch in g I*