Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for High-density Mounting z Allowing Supply with the Radial Taping z Complementary to 2SA1309A 2. COLLECTOR
|
Original
|
O-92S
2SC3311A
2SA1309A
100mA
200MHz
|
PDF
|
NV TRANSISTOR 2sc3311a
Abstract: 2SA1309A 2SC3311A
Text: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage
|
Original
|
2SC3311A
2SA1309A
NV TRANSISTOR 2sc3311a
2SA1309A
2SC3311A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.
|
Original
|
2002/95/EC)
2SA1309A
2SC3311A
|
PDF
|
NV TRANSISTOR 2sc3311a
Abstract: 2SA1309A 2SC3311A 2SC3311A Q 2sc331
Text: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage
|
Original
|
2SC3311A
2SA1309A
NV TRANSISTOR 2sc3311a
2SA1309A
2SC3311A
2SC3311A Q
2sc331
|
PDF
|
2sc331
Abstract: 2SA1309A 2SC3311A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features (0.8) ue pl d in an c se ed lud pl vi an m m es si
|
Original
|
2002/95/EC)
2SC3311A
2SA1309A
2sc331
2SA1309A
2SC3311A
|
PDF
|
2SA1309A
Abstract: 2SC3311A
Text: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage
|
Original
|
2SA1309A
2SC3311A
2SA1309A
2SC3311A
|
PDF
|
2SA1309A
Abstract: 2SC3311A
Text: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage
|
Original
|
2SA1309A
2SC3311A
2SA1309A
2SC3311A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.
|
Original
|
2002/95/EC)
2SA1309A
2SC3311A
|
PDF
|
2SC3311A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5
|
Original
|
2002/95/EC)
2SC3311A
2SA1309A
2SC3311A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5
|
Original
|
2002/95/EC)
2SC3311A
2SA1309A
|
PDF
|
2SA1309A
Abstract: 2SC3311A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) Th an
|
Original
|
2002/95/EC)
2SA1309A
2SC3311A
2SA1309A
2SC3311A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi
|
Original
|
2002/95/EC)
2SA1309A
2SC3311A
|
PDF
|
2SA1309A
Abstract: 2SC3311A
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) Th an W is k y
|
Original
|
2002/95/EC)
2SC3311A
2SA1309A
2SA1309A
2SC3311A
|
PDF
|
2SA1309A
Abstract: 2SC3311A
Text: Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • High forward current transfer ratio hFE • Allowing supply with the radial taping
|
Original
|
2SA1309A
2SC3311A
2SA1309A
2SC3311A
|
PDF
|
|
|
2SA1309A
Abstract: 2SC3311A
Text: Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping
|
Original
|
2SC3311A
2SA1309A
2SA1309A
2SC3311A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi
|
Original
|
2002/95/EC)
2SC3311A
2SA1309A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Forward Current Transfer Ratio hFE. z Allowing Supply with the Radial Taping. z Optimum for High-density Mounting.
|
Original
|
O-92S
2SA1309A
2SC3311A
-50mA
200MHz
|
PDF
|
MCZ3001D
Abstract: MCZ3001 EZ0150AV1 dm-58 UF4005PKG23 dm-58 error amp MCZ3001D Datasheet MCZ3001D equivalent MA111-TX CN602
Text: KV-27FV300/29FV300/32FV300/36FV300 GK BOARD SCHEMATIC DIAGRAM | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | CN603 C600 * D647 D1NL20U-TA2 C607 1000p 250V 1 FB610 1.1UH FB611 1.1UH JW602 7.5MM C603 0.22 275V D628 MA111-TX 2 C633 0.001 3 R673 JW 7.5MM 4 R631
|
Original
|
KV-27FV300/29FV300/32FV300/36FV300
CN603
D1NL20U-TA2
1000p
FB610
FB611
JW602
VDR600
JW603
MCZ3001D
MCZ3001
EZ0150AV1
dm-58
UF4005PKG23
dm-58 error amp
MCZ3001D Datasheet
MCZ3001D equivalent
MA111-TX
CN602
|
PDF
|
ON3105
Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S
|
Original
|
MN1001
MN1020215
MN1020407
MN1020415
MN1020715
MN102LF53G
MN1040
MN110
MN1101
MN115
ON3105
2sd2603
mn4117405
2sc901b
mn6520
MN1280
mn1225
MN6147C
2SC5573
GN2013
|
PDF
|
2SC1047
Abstract: 2SC3311A UP04598
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
|
Original
|
2002/95/EC)
UP04598
OD-723
2SC1047
2SC3311A
2SC1047
2SC3311A
UP04598
|
PDF
|
2SC1047
Abstract: 2SC3311A UP04598
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d Parameter Collector-base voltage (Emitter open) Collector-emitter voltage
|
Original
|
2002/95/EC)
UP04598
2SC1047
2SC3311A
UP04598
|
PDF
|
2SC3311A
Abstract: 2SC3354 UP04599
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)
|
Original
|
2002/95/EC)
UP04599
OD-723
2SC3354
2SC3311A
2SC3311A
2SC3354
UP04599
|
PDF
|
2SC1815
Abstract: 2SC410 2sc1856 2sc1815 type 2sc2061 2SC387A 2SC1359 2SC2410 2SC454 2SC458
Text: - m * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * € tt Manuf. Type No. V -2SC 178 2SC 179 B ÍL 2SC 180 B ÍL 2SC 181 0 ÍL 2SC 182 ^ b m 2SC 183 > b m 2SC 183A Q s 2SC 184 / a m 2SC 185 ¥ b m 2SC 186 ^ t t d r i l 2SC 187 Ä ± ii 2SC 191
|
OCR Scan
|
2SC1359
2SC458
2SC1815
2SC828
2SC1740
2SC1815
2SC410
2sc1856
2sc1815 type
2sc2061
2SC387A
2SC1359
2SC2410
2SC454
2SC458
|
PDF
|
2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
|
OCR Scan
|
T258-OMI
FAX06
2SC144
2SD466
2sc5266
|
PDF
|
