2SC349 Search Results

1032B

Abstract: 2SD845 2SD813 2SD1010 nec 1021 2SC3622 1012 TOSHIBA 1053 2sd1020 2SB1012
Contextual Info: - £ m Type No. 2SD 1010 2SD 1011 2SD 1012 2SD 1017 *- 2SD 1018 2SD 1020 ^ ^ it € H ># SANYO fâ T 2SC3069 fâ T 2SC3495 M £ TOSHIBA 'S NEC B ÍL HITACHI B 2SD 1023 2SD 1024 - %iWjt 2SD 1026 2SD 1029 1030 1031 1032 1032A 2 SO 1032B 2SD 1033 2SD 1034 ^ 2SD

2SC3496

Abstract: 2SC3496A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 6.0±0.2 1.0±0.1 2SC3496 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V

2SC3495

Abstract: ITR05631 ITR05632 ITR05633 ITR05634 ITR05635 ITR05636 A 14U
Contextual Info: Ordering number:ENN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.

2SC3496

Abstract: 2SC3496A
Contextual Info: Power Transistors 2SC3496, 2SC3496A 2SC3496, 2SC3496A Silicon PNP Triple-Diffused Planar Type Power Switching • Package Dimensions . . ■ Features ' • High speed switching ■ • High collector-base voltage V c bo • Good linearity of DC cu rren t gain (hFE)

Contextual Info: Power T ransistors 2SC3496, 2SC3496A 2SC3496, 2SC3496A Silicon PNP Triple-Diffused Planar Type Package Dimensions Power Switching U nit ! I • Features • High speed switching 8.7 max. • High collector-base voltage 6.5max. V cb o • Good linearity of DC cu rre n t gain

2SC3500

Abstract: 2SC3493 2SC35001 2SC3511 2SA1386 2SC3520 2SC3531 2SC3536 2SC3495 2SC3494
Contextual Info: - 160 - Ta=25°C. *EP(ÌTc=25‘ C m % t± £ m 2SC3493 B \L VHF A/TV VHF 2SC3494 B ÌL FM RF/IF A 2SC3495 ìé LF A M Vc b o VcEO ICCDC) Pc Pc* IcBO (V) (V) (A) (W) (W) (/¿A) 15 12 % ft 4# ti (Ta=25tC ) [*EP(Ìtyp hp *CB (V) 0.02 0.15 0. 3 12 \ ni aA/

2SC3498

Abstract: 25c2785 2SC3148 25c3311 25C3330 2SC3445 2SC3874 2SD1431 2SC3306 2SC2295
Contextual Info: - tt Type No. E S Manuf. ft SANYO m Ä 3E TOSHIBA NEC B ±L HITACHI Ä ± ü FUJITSU T MATSUSHITA 2SC 3432 B m. 2SC4161 ZSU356Z • ’ SC2739 2SC 3433 a m 2SC4162 2SC3562 2SC3871 2 SC 3434 b m 2SC4423 2SC3306 2SC3210 2SC 3435 / B » 2SC4424 2SC3498 2SC 3436

VEBO-15V

Abstract: 2SC3495
Contextual Info: Ordering number:EN1430B NPN Epitaxial Planar Silicon Transistor 2SC3495 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • AF amplifier, various driver, muting circuit. unit:mm 2003A Features [2SC3495] · Adoption of FBET process.

Contextual Info: 2SC3496 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition)900 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)200m

2SC3496A

Contextual Info: Transistors SMD Type NPN Silicon Triple Diffused Transistor 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE

2SC3496

Abstract: 2SC3496A 1SC34
Contextual Info: ower Transistors 2SC3496, 2SC3496A ISC3496, 2SC3496A iliçon PNP Triple-Diffused Planar Type Package Dimensions p er Switching U n it : Features High speed switching 8 .7 m ax. High collecto r-b ase v o lta g e V cbo 6 .5 m ax. fjood linearity of DC current gain

Hitachi DSA002755

Contextual Info: 2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5 V Collector current

Contextual Info: 2SC3495 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)10m

2SC3496

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage (Emitter open) Rating Unit VCBO 900 V 2SC3496 1 000 2SC3496A

rf if amplifier

Contextual Info: 2SC3494 Silicon NPN Epitaxial Planar HITACHI Application FM RF/IF amplifier Outline SPAK ! •I 23 490 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 30 V Collector to emitter voltage

2SC3496

Abstract: 2SC3496A
Contextual Info: Power Transistors 2SC3496, 2SC3496A Silicon NPN triple diffusion planar type For power switching Unit: mm 1.0±0.1 Collector-base voltage Emitter open Rating Unit VCBO 900 V 2SC3496 2SC3496A 1 000 900 VCES V Collector-emitter voltage 2SC3496 (Base open)

2SC3494

Abstract: 2SC460 Hitachi DSA00233
Contextual Info: 2SC3494 Silicon NPN Epitaxial Planar Application FM RF/IF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO

Contextual Info: Transistors SMD Type Product specification 2SC3496A +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 Satisfactory linearity of forward current transfer ratio hFE

Contextual Info: H ITACHI 2SC3494 — SILICON NPN EPITAXIAL PLANAR fM ÍVFfiF AM PLIFIER U lf: c h u c u a 1 SPAK I A B SO LU T E MAXIMUM RATINGS <Ta»2S*Cj twm MAXIMUM COLLECTO R DISSIPATION C URVE SC i V :Syttslv! U p.« I V i wj u Coücciof to immer völlige 1 Veto 3U

Contextual Info: 2SC3494 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)0.5u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

2SA169

Abstract: 2SC4390 2sc4705 2SC5155
Contextual Info: H ig h -h p g ale H i g h — h F E , H i g h — ♦ ♦ ♦ ♦ H ig h V gßQ T r a n s i s t o r s V E B O Case outlines unit:mm SANYO :SMCP*f-o.s .„.i.i B'-Base -¿¡Collector C E:Emi tter B E T r - a n s i s t o r - s A p p 1 i c a t F e a t u r e s

2SB1632

Abstract: 2sc3211 2sc3795 2sc3743 2SC2841 2SC3171 2SC3210 2SC3403 2SC3527 2SC3528
Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors Appli­ V cbo cation (V) VcEO (V ) Io (A) VcE (sat) (V) lc Ib tf (/JS) (A) (mA) 150/200/ 80 5 <1.6 5 IW 1 250 330 200 7 < 1 5 500 0.75 500 400 2 1 <1 200 1 Package (No.)