2SC363 Search Results

Contextual Info: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.

Contextual Info: Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.

RF POWER TRANSISTOR NPN

Abstract: 2SC3630 1 w NPN EPITAXIAL PLANAR TYPE
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3630 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed fo r U H F pow er am plifiers applications. FEATURES • High pow er gain:

16373

Abstract: sanyo 16373 sanyo horizontal transistor
Contextual Info: Ordering number:EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High reliability Adoption of HVP process . · Fast speed. · High breakdown voltage.

2SC3636

Abstract: 2SC363
Contextual Info: Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications

2SC3632

Abstract: 1665A 2SA1413-Z 2SC3632-Z MEI-1202 transistor 2sC3632
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION PACKAGE D IM EN SIO N S 2SC3632-Z is designed fo r High Voltage Switching, especially in in millimeters Hybrid Integrated Circuits. , FEATURES • 2.3±0.2 6 .5±0.2

tc1665

Abstract: TC-1665A transistor mp
Contextual Info: SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2 S C 363 2-Z is des ig n e d fo r High V o ltag e S w itching, especially in PACKAGE DIMENSIONS in m illim eters Hybrid In te g rate d Circuits. FEATURES • H ig h V o lta g e V ceo = 600 V

2SC3631

Abstract: 2SC3631Z 2SA1412-Z 2SC3631-Z TC1664A
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SC3631-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage VCEO = 400 V tf < 0.7 s • Complement to 2SA1412-Z

D1825

Abstract: 2sc3631 2SA1412-Z 2SC3631-Z 2sa1412
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1412-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SA1412-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage: VCEO = −400 V • High Speed: tf ≤ 0.7 s • Complement to 2SC3631-Z

2SC3638

Contextual Info: Ordering number: EN 1637B _ 2SC3638 NPN Triple Diffused Planar Silicon Transistor V e r y H l g h -D e f i n i t i o n D i s p l a y Ho r i z o n t a l D e f l e c t i o n O u t p u t A p p l i c a t i o n s Features . High reliability Adoption of HVP process

2SC3638

Contextual Info: Inchange Semiconductor Product Specification 2SC3638 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications

transistor 2sC3632

Abstract: 2SC3632 2SC3632-Z NPN Transistor 600V
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1

Contextual Info: Ordering number: EN 1615B 2SC3637 NPN Triple Diffused Planar Silicon Transistor SANYO Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications i Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

2SC3632

Abstract: 5956A 3632-Z
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SC3632,3632-Z NPN三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○スイッチングスピードが速い。

2SC3631

Abstract: 3631-Z
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistors 2SC3631,3631-Z NPN三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 特 外形図（単位：mm） ★ 徴 6.5 ±0.2 ○スイッチングスピードが速い。

2sc3632

Contextual Info: SILICON TRANSISTOR 2 S C 3 63 2-Z NPN SILICON EPITAXIAL TRANSISTOR M P -3 DESCRIPTION 2SC3632-Z is designed fo r High Voltage Switching, especially in Hybrid Integrated Circuits. PACKAGE DIMENSIONS in millimeters FEATURES • High Voltage V qeo = 600 V • High Speed tf < 0.5 ms

2SC3638

Contextual Info: SavantIC Semiconductor Product Specification 2SC3638 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING

2SC3637

Contextual Info: SavantIC Semiconductor Product Specification 2SC3637 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING

2SC3637

Contextual Info: Inchange Semiconductor Product Specification 2SC3637 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications

Contextual Info: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR □GITb'ìS =H2 2SC3630 NPN EPITAXIAL PLANAR T YPE DESCRIPTION 2SC3630 is a silicon NPN epitaxial planar type transistor specifi­ cally designed fo r U HF power am plifiers applications. OUTLINE DRAWING Dim ensions in mm FEATURES

1615B

Abstract: 2SC3637 777T
Contextual Info: Ordering number: EN 1615B y i I No,1615B _ 2SC3637 NPN T ri ple Diffused Planar S i l i c o n T ra n si st o r Very Hi g h -D e f i n i t i o n D is p l a y Ho r iz o n t a l De f l e c t i o n Output Ap p l i c a t i o n s Features . High reliability Adoption of HVP process

D1825

Abstract: 2SA1413 transistor 2sa1413 2SA1413-Z 2SC3632-Z 2SA1413Z D18251EJ4V0DS
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1413-Z PNP SILICON TRIPLE DIFFUSED TRANSISTOR PACKAGE DRAWING Unit: mm The 2SA1413-Z is designed for High Voltage Switching, especially in 5.5 ±0.2 • High Voltage: VCEO = −600 V • High Speed: tf ≤ 1.0 s • Complement to 2SC3632-Z

Contextual Info: Product specification 2SC3632-Z +0.15 6.50-0.15 +0.2 5.30-0.2 +0.15 1.50 -0.15 TO-252 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 0.5ìs +0.1 0.80-0.1 +0.28 1.50 -0.1 High speed tf +0.2 9.70 -0.2