2SC3666 Search Results

2SC3666 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC3666	Toshiba	2SC3666 - TRANSISTOR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal	Original	PDF	114.4KB	4
2SC3666	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.51KB	1
2SC3666	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	32.55KB	1
2SC3666	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	89.6KB	2
2SC3666	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	34.34KB	1
2SC3666	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.08KB	1
2SC3666	Toshiba	Silicon NPN transistor for audio power amplidier applications	Scan	PDF	177.49KB	3
2SC3666	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF	177.5KB	3
2SC3666-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.51KB	1
2SC3666O	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	96.56KB	2
2SC3666-O	Toshiba	Audio Power Amplifier Apps	Scan	PDF	177.49KB	3
2SC3666-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.51KB	1
2SC3666Y	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	96.57KB	2
2SC3666-Y	Toshiba	Audio Power Amplifier Apps	Scan	PDF	177.48KB	3

2SC3666 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO	OCR Scan	2SC3666 100mA 800mA 800mA,	PDF
2-7D101A Abstract: 2SA1426 2SC3666 A1426 v30010 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426 v30010	PDF
c3666 Abstract: 2SC3666 2-7D101A Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 c3666 2SC3666 2-7D101A	PDF
Contextual Info: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666.	PDF
c3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SC3666 c3666 2-7D101A 2SC3666	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3666 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE(1) = 100~320 絶対最大定格 (Ta = 25°C)	Original	2SC3666 2-7D101A C3666 2-7D101A 2SC3666	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TO SH IBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1426 AUDIO POWER AMPLIFIER APPLICATIONS. • • • U n it in nun High h fj; : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1426 2SC3666. --10mA	PDF
2-7D101A Abstract: 2SA1426 2SC3666 Contextual Info: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 C3666 2-7D101A 2SC3666	PDF
Contextual Info: T O SH IB A 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hpE (l) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666	PDF
2sc3667 Abstract: 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A Contextual Info: 254 - m % M % tt T y p e No. Mantif. SANYO 2SD 1918 □— A 2SC4027 2SD 1919 □— A 2SD1246 2SD 1920 1921 NEC 2SC2690A 2SC3666 2SD1330 2SC3243 2SC3665 2SD639 2SC3581 B 2SD 1925 B tL 2SD 1926 B 2 2SD 1927 B 2SD 1928 B 2SD 1929 * □— A 2SC4169 2SU1Y00	OCR Scan	2SD1918 2SD1919 2SD1920 2SC4027 2SD1246 2SD545 2SC2274 2SC3667 2SC3666 2SC3665 2SD1590 2SD1961 2SC269 2S01207 2SC4351 2SD1319 2SD1565 2SC2274 2SC2690A	PDF
2sD1555 Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404 Contextual Info: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B	OCR Scan	2SD1850 2SD1851 2SD1852 2SD1886 2SC2532 2SD1478 2SD892 2SD1698 2SD1697 2SD893 2sD1555 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404	PDF

Contextual Info: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SC3666 2-7D101A	PDF
2-7D101A Abstract: 2SA1426 2SC3666 A1426 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426	PDF
Contextual Info: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current VCB = 30V, Ie = 0 ICBO	OCR Scan	2SC3666 100mA 800mA 800mA, 100mA	PDF
Contextual Info: 2SA1426 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 426 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hp g : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. 7,1 m a x S. 7 MAS MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SA1426 2SC3666.	PDF
2-7D101A Abstract: 2SC3666 Contextual Info: TOSHIBA 2SC3666 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High DC Current Gain : (1) = 100~320 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage	OCR Scan	2SC3666 2-7D101A 2SC3666	PDF
Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SA1426 2SC3666.	PDF
Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics	Original	2SA1426 2SC3666. 2-7D101A	PDF
C3666 Abstract: 2-7D101A 2SC3666 Contextual Info: 2SC3666 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3666 ○ 低周波電力増幅用単位: mm • 直流電流増幅率が高い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW : hFE = 100~320 絶対最大定格 (Ta = 25°C)	Original	2SC3666 2-7D101A 20070701-JA C3666 2-7D101A 2SC3666	PDF
a1426 Abstract: V30010 2-7D101A 2SA1426 2SC3666 Contextual Info: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol	Original	2SA1426 2SC3666. a1426 V30010 2-7D101A 2SA1426 2SC3666	PDF
2-7D101A Abstract: 2SA1426 2SC3666 Contextual Info: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL	OCR Scan	2SA1426 SA142 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666	PDF

2SC3666 Search Results

2SC3666 Datasheets (14)

2SC3666 Datasheets Context Search

2-7D101A

c3666

c3666

2-7D101A

C3666

2-7D101A

2-7D101A

C3666

2sc3667

2sD1555

2-7D101A

2-7D101A

C3666

a1426

2-7D101A