2SC370 Search Results

2SC3709

Abstract: 2SA1451 pnp hfe 120-240
Contextual Info: JMnic Product Specification 2SA1451 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High speed switching time ・Complement to type 2SC3709 APPLICATIONS ・High current switching applications PINNING

C3709A

Abstract: 2SA1451A 2SC3709A
Contextual Info: 2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3709A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1451A

Contextual Info: TO SH IB A 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS • • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : (sat) = 0.4V (Max.) High Speed Switching Time : tstg=1.0//s (Typ.)

2sc3714

Abstract: 2SC3691 2SC3702 2SC3676 2SC3692 2SC3671 2SC3672 2SC3673 G1508 2SC3678
Contextual Info: - 168 - S Ta=25cC, *EPfäTc=25°C} a s m. % 2SC3671 2SC3672 2SC3673 2SC3675 2SC3676 2SC3678 2SC3679 2SC3680 2SC3685 2SC3686 2SC3687 2SC3688 2SC3689 2SC3691 2SC3692 2SC3693 2SC3694 2SC370Q 2SC3701 2SC3702 2SC3704 2SC3705 2SC3707 2SC3708 2SC3709 2SC3710 2SC3714

a1451a

Abstract: 2SA1451A A1451 2SC3709A
Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)

2SA1450

Abstract: 2sc3708
Contextual Info: Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions • Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V unit:mm 2003A [2SA1450/2SC3708]

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC3707

Abstract: 800mhz transistor
Contextual Info: Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm +0.2 2.8 –0.3 • Features Ta=25˚C Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V Collector current

2SA1450

Abstract: 2SC3708 ITR03631 ITR03632 ITR03633 ITR03634
Contextual Info: 2SA1450 / 2SC3708 注文コード No. N 2 2 1 7 B 三洋半導体データシート 半導体ニューズ No.N2217A をさしかえてください。 2SA1450 / 2SC3708 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ 低周波ドライバ用

2SC3707

Contextual Info: Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Possible with the small current and low voltage • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 1.50+0.25 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3704 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2

2146B

Abstract: PW500 2SC3705 ZENER DIODE 5v CAPACITY
Contextual Info: O rdering num ber: EN 2146B _ 2SC3705 N0.2146B NPN Epitaxial Planar Silicon Darlington Transistor SAXYO i Printer Driver Applications A p p licatio n s • Switching of L load motor drivers, printer drivers, relay drivers . F e a tu re s • High DC current gain.

2SC3709

Abstract: v619
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. 2SC3709 INDUSTRIAL APPLICATIONS Unit in mm FEATURES: 10.3 MAX, . Low Collector Saturation Voltage : VCE(sat)=0.4V(Max.) (at Ic=6A) . High Speed Switching Time : tgtg= l*OiJs(Typ.)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Possible with the small current and low voltage

2SC3705

Contextual Info: Ordering number:EN2146B NPN Epitaxial Planar Silicon Darlington Transistor 2SC3705 Printer Driver Applications Applications Package Dimensions • Switching of L load motor drivers, printer drivers, relay drivers . unit:mm 2009B [2SC3705] Features · High DC current gain.

f 4558

Abstract: 4558 fa 4558 2SC4588 4558, 4556 2SD2076 4558 nec 2SC4420 NEC 4559 2SC3425
Contextual Info: - m € Type No. € tt Manuf. 2SC 4548 / 2SC 4549 > H # o m. p B $ B S B 8 2SC 4550 2SC 4551 2SC 4552 H # SANYO *£ M TOSHIBA 2SD127D 2SD1271 2SC3748 2SC3709 2SÜ2151 2SC3710 2SD1964 2SD1947 2SD1271 2SC 4555 = 2SC 4556 1 t'y'T'y 2SC4162 2SC3626 y -ytry 2SC4459

2SA1451

Abstract: 2SC3709
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1451 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC3709 APPLICATIONS

2SC3707

Abstract: NP0A547
Contextual Info: Composite Transistors NP0A547 Silicon NPN epitaxial planar transistor Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 0.35 (0.35) 1.00±0.05 • 2SC3707 x 2 elements 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2) • Absolute Maximum Ratings Ta = 25°C

a1451a

Contextual Info: 2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1451A High-Speed, High-Current Switching Applications • Low collector saturation voltage • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SC3709A Unit: mm : VCE (sat) = −0.4 V (max) (IC = −6 A)

2SC3708

Abstract: 2SA1450 ITR03631 ITR03633 ITR03634 icp800
Contextual Info: Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions • Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V unit:mm 2003B [2SA1450/2SC3708]

2SA1451A

Abstract: 2SC3709A
Contextual Info: TO SH IBA 2SC3709A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3709A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1451A

2SC3707

Contextual Info: Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm +0.2 2.8 –0.3 • Features Ta=25˚C Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 7 V Emitter to base voltage VEBO 2 V Collector current

2SC3704

Abstract: uhf to6
Contextual Info: Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current