2SC3929 Search Results

MARKING SR

Abstract: ss smd 2SC3929 smd marking gv
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3929 Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Features  Package  Low noise voltage NV  High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚

2SA1531

Abstract: 2SC3929
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531 • Package  Low noise voltage NV  High forward current transfer ratio hFE

2SC3929

Abstract: 2SA1531 2SA1531A 2SC3929A K8022
Contextual Info: Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚ (0.65) (0.65) 2.0±0.2 Rating Unit VCBO 35 V 10˚ VCEO Emitter-base voltage (Collector open)

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm • Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A Low-Frequency Low-Noise PNP transistor marking nv
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A Unit: mm • Features Collector to 2SA1531 Ratings –35 VCBO –35 0.3–0 0.65 1.3±0.1 0.65 V –55 Emitter to base voltage

marking tr

Abstract: 2SC3929A
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial Planar 2SC3929A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 55

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531G • Features ■ Package • Low noise voltage NV • High forward current transfer ratio hFE

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A 2SC3929, 2SC3929A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planar type 0.425 Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 • Low noise voltage NV • High forward current transfer ratio hFE

riaa

Abstract: 2SC3929 2SA1531 2SA1531A 2SC3929A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm • Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100

2SC3929

Abstract: 2SC3929A 2SA1531 2SA1531A
Contextual Info: Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm • Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SA1531G • Package • Low noise voltage NV

2SC3929S

Abstract: 2SA1531 2SA1531A 2SC3929 2SC3929A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 5˚

2SA1531A

Abstract: 2SC3929 2SC3929A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531A • Package  Low noise voltage NV  High forward current transfer ratio hFE

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929, 2SC3929A Silicon NPN epitaxial planar type (0.425) Unit: mm For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A 1531A
Contextual Info: Transistors 2SA1531, 2SA1531A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A • Features 0.3+0.1 –0.0 VCBO −35 V 5° −55 Emitter-base voltage Collector open 2.1±0.1 Unit VCEO

2SA1531

Abstract: 2SA1531A 2SC3929 2SC3929A
Contextual Info: Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planar type 0.425 Unit: mm For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A 0.3+0.1 –0.0 0.15+0.10 –0.05 base voltage 2SA1531A Collector to emitter voltage 2SA1531

Contextual Info: Transistors 2SA1531, 2SA1531A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC3929 and 2SC3929A • Features 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 0.2±0.1 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SA1531G • Package • Low noise voltage NV

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3929 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1531 • Package M Di ain sc te on na tin nc ue e/ d  Features  Absolute Maximum Ratings Ta = 25°C

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for