2SC450 Search Results

2SC4509

Contextual Info: Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertors ・Solid state relay

2SC4507

Contextual Info: Inchange Semiconductor Product Specification 2SC4507 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High speed switching performance APPLICATIONS ・For switching regulator and general purpose power amplifier applications

2SC4508

Contextual Info: SavantIC Semiconductor Product Specification 2SC4508 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High speed switching performance APPLICATIONS ·For switching regulator and general purpose power amplifier applications

Contextual Info: 2SC4501 L /(S) Silicon NPN Epitaxial HITACHI Application High gain amplifier and medium speed switching Outline 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Item Sym bol Ratings Unit Collector to base voltage ^G B G 30 V Collector to em itter voltage

Contextual Info: 2SC4500 L /(S) Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline DPAK * S Type I 1 1. q L Type 1. Base 3. Em itter 4. Collector ’ Ï °- \ f K r * - I 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25 °C) Item Symbol

2SC3444

Abstract: 2sb2025 d1830 2SD1963 2sd1633 2SD1292 2SD1612 2sd1587 2sd1932 2sd1944
Contextual Info: « Type No. 2SD 1 586 2SD 1 587 0^ 2SD 1588 f 2SD 1 589 s 2SD 1590 2SD 1592 2SD 1593 ^ 250 1594 ^ 2SD 1595 ✓ 2SD 1598 2SÖ 1599 2SD 1600 2S0 1601 tt M anuf. € a • B B 1a B m. b 2SC4500L/S a b B tL fö T B tL B tL i CD ^ 2SD 1612 2SD 1613 2SD 1 6 1 4

MARKING CODE 15

Abstract: 2SA1759 2SC4505 T100
Contextual Info: 2SC4505 Transistors Power Transistor 400V, 0.1A 2SC4505 zDimensions (Unit : mm) zFeatures 1) High breakdown voltage. (BVCEO = 400V) 2) Low saturation voltage, typically VCE (sat)= 0.05V at IC / IB = 10mA / 1mA. 3) High switching speed, typically tf = 1.7µs at Ic =100mA.

2SC4500

Abstract: Hitachi DSA00315
Contextual Info: 2SC4500 L /(S) Silicon NPN Epitaxial ADE-208-894 (Z) 1st. Edition Sep. 2000 Application Low frequency amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 3 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C)

2SC4500

Abstract: Hitachi DSA00382
Contextual Info: 2SC4500 L /(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 3 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

B1335A

Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
Contextual Info: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033

marking code transistor ND

Abstract: marking code MPT3 transistor surface mount ND
Contextual Info: 2SC4505 Transistor, NPN Features • available in MPT3 MPT3, SOT-89, SC-62 package • package marking: 2SC4505; CE^, where ★ is hFE code • high voltage BVCE0 = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for lc/lB = 10 mA/1 mA

2SA4505

Abstract: C4505
Contextual Info: 2SA1759 2SC4505 / 2SC4620 Transistors High-voltage Switching Transistor Camera strobes and Telephone, Power supply I 2SA1759 # Features 2) 3) 4) 5) • \ Absolute maximum ratings (Ta“ 2 5 t ) High breakdow n voltage. ( V c e o = — 400V ) Low Vcetsa?). (T yp .—0.2 V at Ic /Ib = —2 0 /— 2m A)

2SC4504

Abstract: ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 cm 2038A
Contextual Info: Ordering number:ENN3160A NPN Epitaxial Planar Silicon Transistor 2SC4504 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2038A

D1494

Abstract: 2SC4504 ITR07141 ITR07142 ITR07143 ITR07144 ITR07145 06M2 X-6587
Contextual Info: 2SC4504 注文コード No. N 3 1 6 0 B 三洋半導体データシート 半導体ニューズ No.N3160A をさしかえてください。 2SC4504 NPN エピタキシァルプレーナ型シリコントランジスタ 高精細度 CRT ディスプレイ ビデオ出力ドライバ用

2SC4503

Contextual Info: SANKEN ELECTRIC CO LTD SSE D • 7^0741 0001007 T*13 ISAKJ Silicon N PN Epitaxial Planar 2SC4503 ☆ High Gurrent Low VcE sat Switching Transistor A pplication Exam ple : e Outline Drawing 5. .FM100 General Purpose (Ta=25"C) Electrical Characteristics

Hitachi DSA00279

Contextual Info: 2SC4500 L /(S) Silicon NPN Epitaxial Application Low frequency amplifier Outline DPAK 4 2, 4 4 1 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 3 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

cm 2038A

Abstract: 2038A 2SC4504 X-6587
Contextual Info: Ordering num ber: EN 3160A 2SC4504 N 0.316OA i NPN Epitaxial Planar Silicon Transistor SA\YO i High-Defìnition CRT Display Video Output Driver Applications F eatu re s • High fj=2.2GHz typ . •Large current (Ic = 300mA), • Adoption of FBET process.

2SC4507

Contextual Info: SavantIC Semiconductor Product Specification 2SC4507 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High speed switching performance APPLICATIONS ·For switching regulator and general purpose power amplifier applications

Contextual Info: 2SC4501 L /(S) Silicon NPN Epitaxial HITACHI Application High gain amplifier and medium speed switching Outline 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^C B O 30 V Collector to em itter voltage

Contextual Info: 2SC4500 L /(S) Silicon NPN Epitaxial HITACHI Application Low frequency amplifier Outline 2SC4500(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage ^C B O 60 V Collector to em itter voltage V cE O 60 V Emitter to base voltage

Contextual Info: 2SC4508 N P N H S ÿ £ ^ U TRIPLE DIFFUSED PLANER TYPE - ^ - ^ HIGH VOLTAGE, HIGH SPEED SWITCHING s » /± , : Features • ¡ f & Z 'f 'y f - y ? • fl£ IS in /± • A A fttt H ig h speed s w itc h in g L o w s a tu ra tio n vo lta g e H ig h re lia b ility

2SC4509R

Contextual Info: 2SC4509R FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertors Solid state relay

SALJ

Contextual Info: HITACHI 2SC4501 L /(S) Silicon NPN Epitaxial High Gain Amplifier and Medium Speed Switching Absolute M axim um Ratings (Ta = 25°C) Item S ym bol Rating Unit Collector to base voltage VC8Q 30 V Collector to emitter voltage Vceo 30 V Emitter to base voltage

2SA1759

Abstract: 2SC4505 2SC4620
Contextual Info: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the