2SC464 Search Results

2SC4645

Abstract: 2SA1785
Contextual Info: Ordering number: E N 351ÎA SANYO N 0 .3 5 1 1 A I 2SA1785/2SC4645 2SA1785.PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications Features • Large current capacity Ic= 1A • High breakdown voltage (Vce O—400V)

Contextual Info: Ordering number : ENN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

2SA1784

Abstract: 2SA1781
Contextual Info: Ordering number:EN3520 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

2sc710

Abstract: 2sc1741 2SC366 2SC380 2sc944 2sC1674 2SC4641 2SC1815 2SC3393 2SC931
Contextual Info: - m € Type No. SANYO 2SC4641 S RH* •$. SIS* B t z i - H i ä drÜ 2SC3393 2SC3393 2SC4455 917 918 920 H 15 2SC2839 2SC 921 * 2SC 922 f 2SC 923 b B B B V m w. m. S «E -— 2SC2999 2SC2999 2SC4641 = H H * ;¥ # = = H ;¥ m n * 2SC 931 • 2SC 932 ^ 2SC 933 f-

Contextual Info: Ordering number : EN 3520 i _ 2SA1784/2SC4644 No.3520 >' + 1 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused P lanar Silicon Transistor SAiYO High Voltage Driver Applications F e a tu re s • Adoption of MBIT process •High breakdown voltage Vceo —400V

EN3511

Abstract: TRANSISTOR MARKING 1d7 A1785 C4645 LA 4645 2SA1785 2SC4645 d015t
Contextual Info: Ordering number: EN 3511A TW O Tb DGlSbES 2SA1785/2SC4645 N 0.3511A I 270 2SA1785:PN P E p itax ial P la n a r Silicon T ran sisto r 2SC4645:NPN T riple Diffused P la n a r Silicon T ran sisto r SAW O i High Voltage Driver Applications F e a tu r e s • L arge cu rre n t capacity Ip = 1A

10l82

Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
Contextual Info: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V

Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

base, collector, emitter

Contextual Info: HITACHI 2SC4643-Silicon NPN Epitaxial UHF/VHF Wide Band Amplifier Table 1 Absolute Maximum Ratings UPAK Ta = 25°C Item Symbol Rating Unit Collector to base voltage Vqbq 15 V Collector to emitter voltage VCEq 9 V Emitter to base voltage Vggo

2SC4465

Abstract: EN3511 2SA1785 2SC4645 5170TA
Contextual Info: Ordering number:EN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

2SC2059K

Abstract: 2SC4099 2SC4649
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available in SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099, 2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

2SA1786

Abstract: 2SC4646 ITR04683 ITR04684 ITR04685 ITR04686
Contextual Info: 注文コード No. N 3 5 1 2 B 2SA1786/2SC4646 No. N 3 5 1 2 B 20400 半導体ニューズ No.3512A とさしかえてください。 2SA1786 : PNP エピタキシァルプレーナ形シリコントランジスタ 2SC4646 : NPN 三重拡散プレーナ形シリコントランジスタ

Contextual Info: Ordering number: EN3511A _ 2SA1785/2SC4645 2SA1785:PNP Epitaxial Planar Silicon Transistor 2SC4645:NPN Triple Diffused Planar Silicon Transistor High Voltage Driver Applications F e a tu re s •Large current capacity Ic = 1A • High breakdown voltage (Vceo = 400V)

2tj transistor

Abstract: A1786 sanyo s-w 1000 MARKING 3512B pnp transistor 400V 500mA C4646 2SA1786 2SC4646 3512B en3512
Contextual Info: 7 cH 7 0 ? b DDlSbST T ib O rdering num ber: E N 3 5 1 2 B 2SA1786/2SC4646 N0.35 12B k 2SA1786:PNP Epitaxial P lanar Silicon Transistor 2SC4646:NPN Triple Diffused Planar Silicon Transistor SAXYO i High Voltage Driver Applications F e a tu re s • Large current capacity Ig = 2A

2SC1840

Abstract: 2sc1775 2SC1737 2sc2655 2SC1684 2SC2510 2SC1815 2SC1010 2SC3311A 2SC1740
Contextual Info: - 122 - m « £ Type No. Manuf. m a m z 2SC 1737 2SC 1738 2SC 1739 * 2SC 1740 2SC 1741 ». 2SC 1742 □— A □— A □— A X ^ = n SANYO ÍÜ NEC £ HITACHI * ± a FU JITSU fâ T MATSUSHITA -=L H M ITSUBISHI O — A ROHM 2SC4641 2SC1840 2SC1740 2SC3382

2SC4647

Contextual Info: 2SC4647 Silicon NPN Triple Diffused High Voltage Amplifier Features TO-92 1 • High break down voltage V(BR)CEO = 300 V Min. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–

marking HX

Abstract: 2SC4592 2SC4643 Hitachi DSA00234
Contextual Info: 2SC4643 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline UPAK 3 2 1 4 1. Base 2. Collector 3. Emitter 4. Collector Flange 2SC4643 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

2SA1786

Abstract: 2SC4646 35123 2SC4646E
Contextual Info: Ordering number:EN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

2SC3998

Abstract: 2sc4640 4793 2SC1815 2sd637 2sc2555 2SC4804 C4463 4802 2SD1546
Contextual Info: - m « Type No. a € Manuf. H * SANYO X £ TOSHIBA B Is NEC B 3¿ HITACHI S ± Ä FUJITSU fâ T MATSUSHITA 2SC 4773 □— A 2SC4406 2SC4244 2SC4463 2SC3932 2SC 4774 * □— A 2SC4407 2SC4250 2SC44S3 2SC4670 2SC 4775 □— A 2SC 4776 □— A 2SC4640 2SC1815

131 Transistor

Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

ic 8287

Abstract: 2SC4645 n3511 2SA1785 ITR04666 ITR04667 ITR04668 N3092
Contextual Info: 注文コード No. N 3 5 1 1 A 2SA1785/2SC4645 No. N3511A 20100 半導体ニューズ No.3511 とさしかえてください。 2SA1785 / 2SC4645 特長 2SA1785 : PNP エピタキシァルプレーナ形シリコントランジスタ 2SC4645 : NPN 三重拡散プレーナ形シリコントランジスタ

30c53

Abstract: 2SA1784 2SC4644 ITR04653
Contextual Info: Ordering number:ENN3520 PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SA1784/2SC4644 High Voltage Driver Applications Features Package Dimensions • Adoption of MBIT process. · High breakdown voltage VCEO≥400V .

2SA1786

Abstract: 2SC4646
Contextual Info: Ordering number:ENN3512B 2SA1786 : PNP Epitaxial Planar Silicon Transistor 2SC4646 : NPN Triple Diffused Planar Silicon Transistor 2SA1786/2SC4646 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=2A . · High breakdown voltage (VCEO≥400V).

2SA1784

Abstract: A178
Contextual Info: O rderin g n u m b e r : EN 3 5 2 0 2SA1784/2SC4644 No.3520 PN P E pitaxial P la n ar Silicon T ransistor N PN Triple Diffused P la n ar Silicon T ransistor H igh V oltage D river A pplications F e a tu re s •Adoption of MBIT process • High breakdown voltage V q e o —400V