2SC479 Search Results

Contextual Info: 2SC4793 SILICON NPN EPITAXIAL TYPE POW ER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1837 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage

transistor c 4793

Abstract: transistor 4793 TOSHIBA C 4793 hfe 4793 2sc 4793
Contextual Info: TOSHIBA 2SC4793 Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Com plem entary to 2SA1837 A bsolute M axim um Ratings Ta = 25°C SYMBOL RATING UNIT C ollector-B ase Voltage

transistor C4793

Abstract: c4793 C4793 TOSHIBA c4793 datasheet transistor 2SC4793 c4793 transistor 2sc4793 2SA1837 2Sc4793 toshiba
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics

2SA1837

Abstract: transistor 2SC4793 2sc4793
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications.

Contextual Info: T O SH IB A 2SC4793 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4793 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 1 Q ± 0 -3 • • High Transition Frequency : fp = 100MHz Typ. Complementary to 2SA1837 > .2 ± 0 .2 Oi

Hitachi DSA00164

Contextual Info: 2SC4796 Silicon NPN Triple Diffused Application TV/character display horizontal deflection output Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter

transistor A1837

Abstract: a1837 2SA1837 a1837 datasheet 2SC4793 toshiba A1837 A1837 transistor
Contextual Info: 2SA1837 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC4793 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

2SA1837

Abstract: 2SC4793 2SA1837 Toshiba
Contextual Info: TOSHIBA Discrete Semiconductors 2SC4793 Transistor Unit in mm Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Complementary to 2SA1837 Absolute Maximum Ratings Ta = 25°C CHARACTERISTIC

2SA1837

Abstract: 2SC4793
Contextual Info: TOSHIBA 2SC4793 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4793 Unit in mm POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 100MHz Typ. Complementary to 2SA1837 2 '^ "<v>0 o cn CO O 1.1 M A X IM U M RATINGS (Ta = 25°C)

2SA1837

Abstract: transistor 2sa1837 pnp VCEO 230V Ic 1A la 1837 2SC4793
Contextual Info: 2SA1837 TO SH IBA 2 S A 1 837 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS High Transition Frequency : fr[' = 70MHz Typ. Complementary to 2SC4793 1.1 MAXIMUM RATINGS (Tc = 25°C)

Contextual Info: HITACHI 2SC4791 -Silicon NPN Bipolar Transistor Application MPAK-4 VHF & UHF wide band amplifier Features • High gain bandwidth product f j = 10 GHz typ • High gain, low noise figure PG = 15.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 1. 2. 3.

Contextual Info: 2SC4791 -S ilicon N PN B ip o la r Transistor Application MPAK-4 VHF & UHF wide band amplifier Features 2 * High gain bandwidth product f-j- = 10 GHz typ • High gain, low noise figure PG = 15.5 dB typ, N F = 1.2 dB typ at f = 900 MHz 3 4Q 4 1. 2. 3.

2sa1837

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AM PLI FI ER APPLI CAT I ON S DRI V ER ST AGE AM PLI FI ER APPLI CAT I ON S  FEAT U RES * High Transition Frequency: fT=70MHZ Typ. * Complementary to UTC 2SC4793  ORDERI N G I N FORM AT I ON

2SA1837

Abstract: power amplifier 2sa1837 TRANSISTOR 2SC4793 2sa1837
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1837 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS „ FEATURES * High Transition Frequency: fT=70MHZ Typ. * Complementary to UTC 2SC4793 „ ORDERING INFORMATION Order Number

2SA1837

Abstract: transistor 2sa1837 pnp 2SA1837 datasheet transistor 2sA1837 2SC4793 SILICON PNP POWER TRANSISTOR
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications.

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

Contextual Info: 2SC4797 Silicon NPN Triple Diffused HITACHI Application TV/character display horizontal deflection output Features • High speed switching tf < 0.6 jis • High breakdown voltage VCbo = 1700 V • Isolated package TO-3PFM Outline TO -3PFM 2SC4797 Absolute Maximum Ratings Ta = 25°C

transistor 2sc4793

Abstract: 2SC4793
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR TO SHIBA TECHNICAL 2SC4793 DATA SILICON NPN EPITAXIAL TYPE 2SC4793 Unit in mm PO W ER AM PLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. 53.2 10 ±0.3 ± 0.2 2.7 ±0.2 -*1 • • 1- High Transition Frequency : fr = 100MHz (Typ.)

transistor 2SC4793

Abstract: 2SA1837 2SC4793
Contextual Info: TO SH IBA 2SC4793 2SC4793 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS r • • High Transition Frequency : fp = 100MHz Typ. Complementary to 2SA1837 10 ±0.3 ^3.2 ± 0.2 - *i< ÍY^ J o 2.7±Q 2 ÜÜ of 3.9 POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE

ZO 607 MA

Abstract: transistor zo 607 zo 607 CA 3068 IC zo 607 p 408 2SC4791 Hitachi DSA00336
Contextual Info: 2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter

Contextual Info: HITACHI 2SC4796-Silicon NPN Triple Diffused Application TO-3PFM TV / character display horizontal deflection output Features • High speed switching tf < 0.6 us • High breakdown voltage VCBO= I7 0 0 V • Isolated package TO-3PFM 1. Base 2. Collector

transistor C4793

Abstract: c4793 C4793 TOSHIBA toshiba c4793 c4793 transistor 2SC4793 2Sc4793 toshiba
Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1837 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

Contextual Info: TOSHIBA 2SA1837 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PO W ER AM PLIFIER APPLICATIONS U nit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 + 0.3 • High Transition Frequency : fx = 70MHz Typ. • Complementary to 2SC4793 , M A X IM U M RATINGS (Ta = 25°C)