2SC493 Search Results

2SA1869

Abstract: 2SC4935
Contextual Info: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃

Contextual Info: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

a1869 transistor

Abstract: a1869 2SA1869
Contextual Info: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

c4935

Abstract: 2SC4935 2SA1869 IC502
Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol

2SC4938

Contextual Info: 2SC4938 Transistors High-voltage Switching Transistor 400V, 5A 2SC4938 !External dimensions (Units : mm) !Features 1) Low VCE(sat). (Typ. 0.6V at IC / IB=5/1A) 2) Fast switching. (tf :Max.1µs at IC=4A) 3) Wide SOA. (safe operating area) 13.1 0.5Min. 1.3

2SC4938

Abstract: transistor z3
Contextual Info: 2SC4938 Transistor, NPN Features Dimensions Units: mm • available in P S D package • high-speed switching, tf < 1.0 (is for lc = 4 A • low collector saturation voltage, typically, V CE(sat)< 1.0 V fo r Ic/IB = 5 A /1 A • wide safe operating area (SOA)

2sc4939

Abstract: 690 lc
Contextual Info: K7 > 9 s 2SC4939 £ /Transistors 2SC4939 I \ ¿ $ * y 7 J \ ' 7 l s - Í - M N P N v lJ ^ > b 7 > y Z $ Epitaxial Planar NPN Silicon Transistor "J $ ’ > • « ft >^ffl/High Speed Switching • W B \fii;ll/'D im ensions U nit: mm 1) tfS0.3us, (¡o— 6A)

2SA1869

Abstract: 2SC4935
Contextual Info: TOSHIBA 2SC4935 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC493 5 Unit in mm P O W E R A M P L IF IE R A PPLIC A TIO N S • • 10 ±0.3 Good Linearity of kpg. Complementary to 2SA1869 and 5 Watts Output Applications. ^3.2 ± 0.2

C4935

Abstract: C4935 Y 2SC4935
Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol

2SC4934D

Abstract: 2SC4934E 2SC4046 2SC4934 Hitachi DSA00493
Contextual Info: 2SC4934 Silicon NPN Epitaxial Application High voltage amplifier Outline Ordering Information hFE 2SC4934D 250 to 500 2SC4934E 400 to 800 2SC4934 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage

2sc4934

Abstract: 126FM 2SC4934E
Contextual Info: HITACHI 2SC4934 Silicon NPN Epitaxial Application T O -126F M High voltage amplifier I ill Ordering Information 1. '3 hFE 2SC4934D 250 to 500 2SC4934E 400 to 800 I Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage V CBO

TF286

Abstract: 2SC4938 C4938
Contextual Info: / K 2SC4938 Transistors 2S C 4938 E M m cf Is - i-M NPN V y □ > h y > v * $ Triple Diffused Planar NPN Silicon Transistor. ¡S&DC-DC □ > / < - * « Switching Regulator, High Speed DC-DC Converter • W f é 't f jilS I/Dimensions Unit : mm t f< 1 .0 M S ,

Contextual Info: 2SC4937 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: 2SC4939E Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)12 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

transistor C5001

Abstract: C5001 transistor TRANSISTOR MARKING YB transistor marking C5001 c5001 C5001 R marking code Yb Transistor 2SC5001F5 2sc4939 CC OWV W
Contextual Info: 2SC4939 Transistor, NPN Features • available in PSD package • high-speed switching, typically, tf < 0.3 |xs for lc = 6A • low collector saturation voltage, typically VcE sat ^0-3 Vfor lc/lB = 6A/0.3A • wide safe operating area (SOA) Applications • high speed dc-dc converter

2SA1869

Abstract: 2SC4935
Contextual Info: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25

2SC4931

Abstract: ITR07797 ITR07798 ITR07799 ITR07800 ITR07801 ic marking 3052 kt 784
Contextual Info: Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.

2SA1869

Abstract: 2SC4935
Contextual Info: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg

Contextual Info: 2SC4938 Transistor, NPN Features Dimensions Units : mm • available in PSD package • high-speed switching, tf < 1.0 ¿is for lc = 4 A 2SC4938 (PSD) XI • low collector saturation voltage, typically, VCE(sat)< 1.0 V for lc /lB - 5 A/1 A • wide safe operating area (SOA)

Contextual Info: 2SC4937 / T ransistors 2SC4937 H l& t f r 71/ - * NPN y 'J □ > S 7 > V * $ Triple Diffused Planar NPN Silicon Transistor • ¡I & D C - D C U > / \ '- £ J fl Switching Regulator, High Speed DC-DC Converter 1 ii-JK '^ iiS /D im e n sio n s U n it: mm

2SA1869

Abstract: 2SC4935
Contextual Info: 2SA1869 T O S H IB A 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 1.2±0.2 10 ±0.3 Good Linearity of hjrg Complementary to 2SC4935 2.7±0.2 1.1 M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

2SC4935

Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage

a1273* transistor

Abstract: a1273 transistor A1273
Contextual Info: Ordering number:ENN5295A NPN Epitaxial Planar Silicon Transistor 2SC4931 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.