2SC4935 Search Results

2SC4935 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC4935	Toshiba	High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SA1869	Original	PDF	113.59KB	4
2SC4935	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.05KB	1
2SC4935	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	47.23KB	1
2SC4935	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	44.82KB	1
2SC4935	Toshiba	SILICON NPN EPITAXIAL TYPE (PCT PROCESS) TRANSISTOR	Scan	PDF	178.07KB	3
2SC4935	Toshiba	Silicon NPN transistor for power amplifier applications	Scan	PDF	178.06KB	3
2SC4935O	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	98.07KB	2
2SC4935Y	Toshiba	Silicon NPN Epitaxial Type Transistor	Scan	PDF	98.07KB	2
2SC4935-Y,Q(J	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 3A 50V TO220-3	Original	PDF	164.11KB

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SC4935-Y,Q(J TRANS NPN 50V 3A TO-220NIS
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2SC4935 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: JMnic Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SC4935 APPLICATIONS ・Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃	Original	2SA1869 O-220F 2SC4935 2SA1869 2SC4935	PDF
Contextual Info: 2SA1869 SILICO N P N P EPITAXIAL T Y P E P C T P R O C E S S U nit in mm PO W ER AM PLIFIER APPLICATIONS. 10 + 0.3 • • . ¿3 .; to .; 2 .7 * 0 2 Good Linearity of hpEComplementary to 2SC4935. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1869 2SC4935. SC-67 2-10R1A --10mA,	PDF
a1869 transistor Abstract: a1869 2SA1869 Contextual Info: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SA1869 2SC4935 SC-67 2-10R1A a1869 transistor a1869 2SA1869	PDF
c4935 Abstract: 2SC4935 2SA1869 IC502 Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SC4935 2SA1869 SC-67 c4935 2SC4935 IC502	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: TOSHIBA 2SC4935 T O S H IB A TRA N SISTO R SILICON NPN EPIT A X IA L TY PE PCT PROCESS 2SC493 5 Unit in mm P O W E R A M P L IF IE R A PPLIC A TIO N S • • 10 ±0.3 Good Linearity of kpg. Complementary to 2SA1869 and 5 Watts Output Applications. ^3.2 ± 0.2	OCR Scan	2SC4935 2SA1869 SC-67 961001EAA2' 2SC4935	PDF
C4935 Abstract: C4935 Y 2SC4935 Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol	Original	2SC4935 2SA1869 SC-67 2-10R1A C4935 C4935 Y 2SC4935	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: TOSHIBA 2SA1869 2 S A 1 869 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Good Linearity of hEE Complementary to 2SC4935 r <v> o 1.1 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage	OCR Scan	2SA1869 2SC4935 SC-67 2-10R1A 2SA1869 2SC4935	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: SavantIC Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25	Original	2SA1869 O-220F 2SC4935 2SA1869 2SC4935	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: TO SH IBA 2SA1869 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B PC Tj Tstg	OCR Scan	2SA1869 2SC4935 SC-67 2SA1869 2SC4935	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: 2SA1869 T O S H IB A 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 1.2±0.2 10 ±0.3 Good Linearity of hjrg Complementary to 2SC4935 2.7±0.2 1.1 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SA1869 2SC4935 2SA1869 2SC4935	PDF
Contextual Info: 2SA1869 TOSHIBA 2 S A 1 869 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm Î.2 ± 0.2 10 ±0.3 Good Linearity of hpg Complementary to 2SC4935 2.710.2 m 1.1 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	2SA1869 2SC4935	PDF
2SC4935 Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications • Unit: mm Good hFE linearity Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage	Original	2SC4935 SC-67 2-10R1A 2SC4935	PDF
Contextual Info: 2SC4935 SILICON NPN TRIPLE DIFFUSED MESA TYPE PO W ER AM PLIFIER APPLICATIONS. U n it in mm 10 + 0 3 • • ¿ 3.2 ± 0.2 2.7 + 0.2 Good Linearity of hjrjr;. Complementary to 2SA1869 and 5 W atts Output Applications. M A X IM U M RATINGS SYMBOL CHARACTERISTIC	OCR Scan	2SC4935 2SA1869 SC-67 2-10R1A	PDF
Contextual Info: TO SHIBA 2SA1869 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS )<; a i ftfiQ Unit in mm POWER AMPLIFIER APPLICATIONS 10 + 0.3 Good L inearity of 03.2 + 0.2 -n > -=r 2.7±Q.2 Complementary to 2SC4935 1.1 M A X IM U M R A T I N A lT x = '>S,°n	OCR Scan	2SA1869 2SC4935	PDF

2SA1869 Abstract: 2SC4935 T0-220F rfl5 Contextual Info: AOK Product Specification AOK Semiconductor Silicon PNP Power Transistors 2SA1869 DESCRIPTION • With T 0 2 2 0 F package • Complement to type 2SC4935 APPLICATIONS • Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter A b s o lu te m axim um ratings Ta=25*C	OCR Scan	2SA1869 T0-220F 2SC4935 rfl5	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm PO W ER AM PLIFIER APPLICATIONS • • Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. M A X IM U M RATINGS SYMBOL CHARACTERISTIC	OCR Scan	2SC4935 2SA1869 SC-67 2-10R1A 961001EAA2' 2SC4935	PDF
a1869 Abstract: a1869 transistor 2sa1869 transistor 2SA1869 2SC4935 Contextual Info: 2SA1869 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1869 Power Amplifier Applications • Good linearity of hFE • Complementary to 2SC4935 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage	Original	2SA1869 2SC4935 SC-67 a1869 a1869 transistor 2sa1869 transistor 2SA1869 2SC4935	PDF
cni-70 Abstract: 2sa1869 transistor 2SA1869 2SC4935 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1869 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4935 APPLICATIONS ·Designed for power amplifier applications.	Original	2SA1869 2SC4935 cni-70 2sa1869 transistor 2SA1869 2SC4935	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: TO SH IBA 2SC4935 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Good Linearity of hp^. Complementary to 2SA1869 and 5 Watts Output Applications. Unit in mm 10 ±0.3 r ^3.2 ± 0.2 CO RATING 50 50 5	OCR Scan	2SC4935 2SA1869 SC-67 2-10R1A	PDF
Contextual Info: TOSHIBA 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC49 3 5 Unit in mm POWER AMPLIFIER APPLICATIONS • • 10 +0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. r>ase uu rren i Ta = 25°C Collector Power	OCR Scan	2SC4935 2SA1869 961001EAA2'	PDF
C4935 Abstract: 2SC4935 C4935 Y 2SA1869 Contextual Info: 2SC4935 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4935 Power Amplifier Applications Unit: mm • Good hFE linearity • Complementary to 2SA1869 and 5-watt-output applications. Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating	Original	2SC4935 2SA1869 SC-67 C4935 2SC4935 C4935 Y	PDF
2SA1869 Abstract: 2sa186 2SC4935 Contextual Info: Inchange Semiconductor Product Specification 2SA1869 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SC4935 APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings Ta=25℃	Original	2SA1869 O-220F 2SC4935 2SA1869 2sa186 2SC4935	PDF
Contextual Info: T O SH IB A 2SC4935 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4935 Unit in mm POWER AMPLIFIER APPLICATIONS • • 1 0 1 0.3 Good Linearity of hpg. Complementary to 2SA1869 and 5 Watts Output Applications. 4^ 2.710.2 ^ Oi ro O 1.1 MAXIMUM RATINGS	OCR Scan	2SC4935 2SA1869 961001EAA2'	PDF
2SA1869 Abstract: 2SC4935 Contextual Info: 2SA1869 TO SH IBA 2 S A 1 869 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 10 ± 0 .3 Good Linearity of hEE Complementary to 2SC4935 ^ 3 .2 ± 0.2 CO 1.1 SYMBOL VCBO VCEO Ve b o ic :B pc Tj Tstg	OCR Scan	2SA1869 2SC4935 SC-67 2SA1869 2SC4935	PDF

2SC4935 Search Results

2SC4935 Datasheets (9)

2SC4935 Price and Stock

Toshiba America Electronic Components 2SC4935-Y,Q(J

2SC4935 Datasheets Context Search

2SA1869

a1869 transistor

c4935

2SA1869

C4935

2SA1869

2SA1869

2SA1869

2SA1869

2SC4935

2SA1869

2SA1869

a1869

cni-70

2SA1869

C4935

2SA1869

2SA1869