2SC5 Search Results

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

Contextual Info: 2SC5096 SIUCQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r Unit in mm V H F — UHF B A N D L O W N O ISE A M P L IF IE R A PPLICA TIO N S. • • Low Noise Figure, High Gain. N F = 1.8dB, |S2le |2= 7.5dB f=2GHz M A X IM U M R A T IN G S (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5129 U nit in mm HORIZO NTAL DEFLECTION O U TPU T FOR HIGH RESOLUTION DISPLAY, COLOR TV. 1 5.5 ± 0.5 a 3.6 ±0.3 • • • • - 3 ^ - - .1- HIGH SPEED SW ITCHING APPLICATIONS. 3 0±0.3 H igh Speed : tf= 0.15/js Typ.

2SC5092

Contextual Info: 2SC5092 SILIC0N NPN EPITAXIAL PLANAR T Y P E TRANSISTOR TENTATIVE DATA U nit in mm V H F - U H F BAN D L O W NOISE A M PLIFIER APPLICATIONS. • • Low Noise Figure, High Gain. N F ^ l.ld B , |S2iel2 —13dB f=lG H z + Q2 2.9- Q 3 M A X IM U M RATINGS (Ta = 25°C)

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr

2SC5172

Contextual Info: 2SC5172 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS SW ITCH IN G REG U LATO R A N D HIGH VOLTAGE SW ITCHIN G APPLICATIONS. U n it in nun 10*0.3 HIGH SPEED D C-DC CO N VERTER APPLICATIONS. • E xcellent Sw itching Times : tr = 0.7/js (M ax.), tf= 0 .5 //s (M ax.) a t I c = 3A

LT 7706

Abstract: LT 7207
Contextual Info: TOSHIBA 2SC5097 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5097 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm + 0.2 2.9-0.3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S 2 1 e|2= 10dB f=2GHz -H M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SC5086 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r V H F -U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • U n it in mm Low N oise F ig u re , H igh G ain . 1.« ±0.2 N F = l . l d B , |S 2 le P = l l d B f = l G H z 0 8 ±0.1

2SA1941

Abstract: 2SC5198
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SC5198 PO W ER AMPLIFIER APPLICATIONS. • • U n it in mm Complementary to 2SA1941 Recommend for 70W High Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO

Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)

Contextual Info: 2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

Contextual Info: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 s max , tf = 0.3 μs (max) • High collector breakdown voltage: VCEO = 400 V

fe 5571

Abstract: KS 0302
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5183 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low N oise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 m A, f = 2 G H z • NF = 1.3 dB

nec 13772

Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p

2SA1909

Abstract: 2SC5101
Contextual Info: Inchange Semiconductor Product Specification 2SA1909 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SC5101 APPLICATIONS ・Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Fig.1 simplified outline TO-3PML and symbol

SMD TRANSISTOR MARKING BR

Abstract: 2SC5209 marking RH
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)

Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)

Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825