c5076
Abstract: 2SC5076 IC404 2SA1905
Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905
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2SC5076
2SA1905
c5076
2SC5076
IC404
2SA1905
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A1905
Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076
Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076
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2SA1905
2SC5076
A1905
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1905
2SC5076
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2SC5076
Abstract: 2SA1905 C5076
Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1905
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2SC5076
2SA1905
2SC5076
2SA1905
C5076
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C5076
Abstract: No abstract text available
Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905
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2SC5076
2SA1905
C5076
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2SA1905
Abstract: 2SC5076 C5076
Text: 2SC5076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5076 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)
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2SC5076
2SA1905
20070701-JA
2SA1905
2SC5076
C5076
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A1905
Abstract: 2SA1905 2SC5076
Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC5076
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2SA1905
2SC5076
A1905
2SA1905
2SC5076
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Untitled
Abstract: No abstract text available
Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076
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2SA1905
2SC5076
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr
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2SC5076
--10mA,
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2SA19
Abstract: 2SA1905 2SC5076
Text: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • 8.0 ±0 .2 Low Collector Saturation Voltage : Vq^ ( s a t ) “ 0.4V (Max.) (at Ic = 3A) High Speed Switching Time : tgtg^l.O/^s (Typ.)
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2SC5076
2SA1905
2SA19
2SA1905
2SC5076
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Untitled
Abstract: No abstract text available
Text: TO SH IBA 2SC5076 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low C ollector S atu ra tio n V o ltage : V ^ e ( s a .t ) = 0-4V (M ax.) (a t I C = 3A ) • H ig h Speed S w itch in g Tim e
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2SC5076
2SA1905
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS i <;r * n i g HIGH CURRENT SWITCHING APPLICATIONS U nit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : V q e ( s a t ) “ 0.4V (Max.) (at I c = 3A) • High Speed Switching Time
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2SC5076
2SA1905
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2SA1905
Abstract: 2SC5076
Text: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time
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2SC5076
2SA1905
2SA1905
2SC5076
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2SA1905
Abstract: 2SC5076
Text: TO SH IBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 905 HIGH CURRENT SWITCHING APPLICATIONS • Unit in mm Low Collector Saturation Voltage : VCE (sat)~ —0.4V (Max.) • High Speed Switching : tgtg^l.O/^s (Typ.) • Complementary to 2SC5076
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2SA1905
2SC5076
2SA1905
2SC5076
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : • • High Speed Switching Time Complementary to 2SA1905 SÍI + D5 = ^-4V (Max.) (at Ic = 3A)
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2SC5076
2SA1905
961001EAA2
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2SA1905
Abstract: 2SC5076
Text: TO SH IBA 2SA1905 2 S A 1 90 5 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE (sat)~ —0.4V (Max.) • High Speed Switching : tgtg^l.O/^s (Typ.) • Complementary to 2SC5076
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2SA1905
2SC5076
2SA1905
2SC5076
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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l 836
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCH IN G APPLICATIONS. • • • U n it in m m Low Collector Saturation Voltage : VCE (sat) = 0-4V (Max.) (at Ic = 3A) High Speed Switching Time : tg tg ^ .O ^ s (Typ.) Complementary to 2SA1905 tipi
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2SA1905
l 836
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1905 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 9 Q5 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 8.0 ± 0.2 Low Collector Saturation Voltage tm : VCE (sat)~ —0.4V (Max.) TTicrVi S t ip p H S w itrh in c r • - ö l/ g
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2SA1905
2SC5076
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