2SC5176 Search Results

Contextual Info: T O SH IB A 2SC5176 2 S C 5 1 76 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : V C E ( s a t ) = 0 . 4 V (Max.) (at IC = 3 A )

2SC5176

Contextual Info: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.)

2SC5176

Contextual Info: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • • Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at Ie = 3A)

2SC5176

Abstract: 2SC517
Contextual Info: 2SC5176 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : VCE ( s a t ) = 0.4V (Max.) (at Ie = 3A)

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SW ITCH IN G APPLICATIONS. D C-D C CONVERTER APPLICATIONS. • • 2SC5176 Low Collector Saturation Voltage : v CE(sat) = °-4V (Max.) (at Ic = 3A) High Speed Switching Time : tstg=1.0/^s (Typ.)

C5176

Abstract: 2SC5176
Contextual Info: 2SC5176 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5176 通 信 工 業 用 ○ 大電流高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.4 V (最大) (IC = 3 A)

Contextual Info: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.)

2SC5176

Contextual Info: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.)

Contextual Info: TOSHIBA 2SC5176 TOSHIBA TRANSISTOR ? SILICON NPN EPITAXIAL TYPE PCT PROCESS < ; r >; 1 7 f i INDUSTRIAL APPLICATIONS HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 Low Collector Saturation Voltage : VCE (sat) = °-4V (Max.) (at Ic=3A )

2SC5176

Contextual Info: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • INDUSTRIAL APPLICATIONS 10 ± 0.2 Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at IC = 3A)

C5176

Contextual Info: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.)

Contextual Info: TOSHIBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • 01.2 Low Collector Saturation Voltage : v C E ( s a t ) = - ° - 4V (Max.) at I c = - 3 A

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sC5200, 2SA1943, 2sc5198

Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Contextual Info: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2sc5176

Contextual Info: 2SA1934 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm HIGH CU RREN T SW ITCH IN G APPLICATIO N S. DC-DC CO N VERTER APPLIC ATIO N S. -ff Low Collector Saturation Voltage : V c E (s a t)= -° -4V (Max.) at I c = - 3 A High Speed Switching Time : tgtg=1.0/js (Typ.)

2SA1934

Abstract: 2SC5176 A1934
Contextual Info: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High-speed switching: tstg = 1.0 s (typ.)

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High-speed switching: tstg = 1.0 µs (typ.)

Contextual Info: 2SA1934 TOSHIBA 2 SA 1 9 3 4 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : VCE (sat) = -0.4V (Max.) at I q = -3 A High Speed Switching Time : tg^g= l.O^s (Typ.)

2SA1934

Abstract: 2SC5176 A1934
Contextual Info: 2SA1934 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1934 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High-speed switching: tstg = 1.0 µs (typ.)

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4