2SC5305 Search Results

2SC5305 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC5305		Sanyo Semiconductor	Switching Transistors	Original	PDF	34.17KB	3
2SC5305		Unisonic Technologies	HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR	Original	PDF	159.22KB	4
2SC5305		Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.39KB	1
2SC5305LS		Sanyo Semiconductor	NPN Triple Diffused Planar Silicon Transistor	Original	PDF	41.52KB	4
2SC5305LS		Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	43.61KB	1

2SC5305 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NPN Transistor 600V Abstract: NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5305 DESCRIPTION •High Breakdown Voltage :V BR CBO= 1200V (Min) ·High Speed Switching APPLICATIONS ·Designed for inverter lighting applications. Absolute maximum ratings (Ta=25℃)	Original	2SC5305 NPN Transistor 600V NPN 600V transistor 2sc5305 transistor npn high speed switching 5A 600v NPN Transistor VCEO 1200V 1200v 3A	PDF
TA1239 Abstract: 2SC5305 2SC5305LS CP12A TA-1239 Contextual Info: Ordering number:ENN5884A NPN Triple Diffused Planar Silicon Transistor 2SC5305LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.	Original	ENN5884A 2SC5305LS 2079D 2SC5305] O-220FI TA1239 2SC5305 2SC5305LS CP12A TA-1239	PDF
TA-1239 Abstract: VCBO-1200V EN5884 2SC5305 TA1239 Contextual Info: Ordering number:EN5884 NPN Triple Diffused Planar Silicon Transistor 2SC5305 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1200V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm	Original	EN5884 2SC5305 2079B 2SC5305] O-220FI TA-1239 VCBO-1200V EN5884 2SC5305 TA1239	PDF
300V transistor npn 2a Abstract: 2SC5305 2SC5305L Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications	Original	2SC5305 O-220 2SC5305L QW-R203-028 300V transistor npn 2a 2SC5305 2SC5305L	PDF
2sc5305 Abstract: 2SC5305L Contextual Info: UTC 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications	Original	2SC5305 O-220F 2SC5305L QW-R219-003 2sc5305 2SC5305L	PDF
2SC144 Abstract: 2SD466 2sc5266 Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l\|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *	OCR Scan	T258-OMI FAX06 2SC144 2SD466 2sc5266	PDF