2SC531 Search Results

NF 747

Abstract: 2SC5319 hfe 4049 V722 BB34 GA 1619
Contextual Info: TO SHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain : Ga = 11.5dB (f=2GHz) 1.25 ±0.1 13 -¡3 M A X IM U M RATINGS (Ta = 25°C)

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5317 2Ghz amplifier
Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

Contextual Info: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05

Contextual Info: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

Contextual Info: 2SC5317 TO SHIBA 2SC5317 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

2SC5316

Contextual Info: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain

Contextual Info: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz • High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC5318

Contextual Info: TO SH IBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.2 2.9-0.3 -fr • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz)

2SC5315

Contextual Info: 2SC5315 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.5 2.5-0.3 + 0.25 • • l<1-5 - 0-15. Low Noise Figure : NF = 1.3 dB (f = 2 GHz)

OA72

Abstract: OA55 2SC5319 IC 7361 ic 747 cn 4049 toshiba
Contextual Info: TOSHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ±0 .1 • Low Noise Figure : NF = 1.3 dB f = 2 GHz • High Gain :G a = 11.5 dB (f = 2 GHz) 1.25 ± 0.1 - ¡3

2SA1973

Abstract: 2SC5310 ITR08234 ITR08235
Contextual Info: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.

2SC5318

Contextual Info: T O S H IB A TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.2 2 .9 -0 .3 -fr • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz)

2SC5317FT

Contextual Info: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)

2SC5317

Contextual Info: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)

2SC5315

Contextual Info: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)

2SA1973

Abstract: 2SA19 2SC5310 ITR08234 ITR08235 60100ts 2SC53
Contextual Info: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.

BV722

Contextual Info: TOSHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain :G a = 11.5dB (f=2GHz) Unit in mm 2.1 ± 0.1 1.25 ±0.1 13 -¡3 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5317 T O SH IBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE <;r s 3 1 7 MT V • m V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l . M T U 1 ET 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency

Contextual Info: TOSHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5316 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 ,1.25 ± 0.1, • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain :

B F2g

Contextual Info: TOSHIBA 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 3 <;c 5 3 1 7 F W V W • » ■ V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series Low Noise Figure :N F = 1 .3 d B (f=2G H z) H igh Gain :|S 2 l e|2= 9dB (f=2G H z)

Contextual Info: TOSHIBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U nit in mm + 0.2 • Low Noise Figure 2.9-0.3 : N F = 1.3dB f=2GHz II • High Gain :G a —11.5dB (f—2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC5316

Contextual Info: TO SH IBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • U nit in mm 2.1 ±0.1 I m —r 1 o +| +1 m O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)

Contextual Info: MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.4dB typ. (@f = 2 GHz) • High Gain: |S21e| = 12dB (typ.) (@f = 2 GHz) • Compatible with 2SC5319 2

2SC5317FT

Contextual Info: TO SH IBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series 1.2 ±0 .0 5 • • U.O :t u .u o Low Noise Figure : NF = 1.3 dB (f = 2 GHz) High Gain