2SC532 Search Results

Contextual Info: TO SH IBA 2SC5322FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2i e|2 = 10 dB (f = 2 GHz) 1.2 ±0 .0 5 0.8 ± 0.05

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5322
Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain : Ga = 10dB (f=2GHz)

Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4dB f=2GHz : |S2le|2= 12dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

Contextual Info: TOSHIBA 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE mm v mm V H F- U H F BAND LOW NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain : N F = 1 .4 d B f= 2 G H z : |S2 1 e l2~ 1 2 d B ( f — 2 G H z ) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) + 0.2 s 2 .9 - 0.3 MAXIMUM RATINGS (Ta = 25°C)

2SC5321

Abstract: VHF-UHF Band Low Noise Amplifier
Contextual Info: 2SC5321 TOSHIBA 2SC5321 TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : |S2le|2 = 10 dB (f = 2 GHz) 2.1 ¿ 0.1 1.25Ì0 .1

2SC5323

Contextual Info: TO SH IBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : NF = 1.4 dB f = 2 GHz : Ga = 12 dB (f = 2 GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

2SC5324

Contextual Info: T O S H IB A 2SC5324 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5324 Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain : NF = 1.4 dB f = 2 GHz : |S21el2 = 12 dB (f = 2 GHz) 2.1 ± 0.1 1.25 ± 0.1

2SC5321

Contextual Info: 2SC5321 TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • • Low Noise Figure High Gain NF = 1.4dB (f = 2GHz) |S2l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC5322

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r , i 0.8 ± 0 . 1, Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

2SC5322

Contextual Info: TO SH IBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.6 ± 0.2 Low Noise Figure : NF = 1.4 dB f = 2 GHz High Gain : Ga = 10 dB (f = 2 GHz) ,0.8 ± 0.1,

2SC5320

Contextual Info: TO SH IBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • + 0.5 2 .5 -0 .3 Low Noise Figure : NF = 1.4 dB (f = 2 GHz) High Gain

Contextual Info: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5320 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1-0.5 • • Low Noise Figure :N F=1.4dB (f=2GHz) High Gain : |S2l e|2 = 10dB (f=2GHz)

2SC5321

Abstract: bh marking
Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2le|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5322 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5322 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • ,0.8 ± 0 . 1, r— r - i Low Noise Figure : NF = 1.4dB (f=2GHz) High Gain

Contextual Info: TOSHIBA 2SC5323 TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) 2 .9 -0 .3 -e MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 3 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 : N F= 1.4dB f=2GHz : Ga - 12dB (f = 2GHz) 2 .9 -0 .3 11 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA TENTATIVE 2SC5322 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0.1 • Low Noise Figure : NF = 1.4dB (f=2GHz) • High Gain l*- ^

2SC5321

Contextual Info: 2SC5321 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5321 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :NF = 1.4dB (f=2GHz) High Gain : |S2l e|2= lOdB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C)

B F2g

Contextual Info: TOSHIBA TENTATIVE 2SC5321 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE i <;r >5 3 1 1 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

transistor P3d

Contextual Info: TOSHIBA TENTATIVE 2SC5320 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 SC 5 3 2 Q VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series Low Noise Figure :N F = 1 .4 d B (f=2GHz) High Gain : |S2 l e|2= 10dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

2SC5322

Contextual Info: 2SC5322 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5322 ○ VHF~UHF 低雑音増幅用 単位: mm • 雑音特性が優れています。 : NF = 1.4dB f = 2 GHz • 高利得です。 : |S21e|2 = 10dB (f = 2 GHz) 絶対最大定格 (Ta = 25°C)

2SC5323

Abstract: VHF-UHF Band Low Noise Amplifier toshiba 2-3J1C
Contextual Info: TOSHIBA TENTATIVE 2SC5323 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5323 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • • Low Noise Figure High Gain + 0.2 2.9-0.3 :NF = 1.4dB f=2GHz : Ga = 12dB (f = 2GHz) -e M A X IM U M RATINGS (Ta = 25°C)