2SC5358 TRANSISTOR SPECIFICATION Search Results

2SC5358 TRANSISTOR SPECIFICATION Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

2SC5358 TRANSISTOR SPECIFICATION Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SA1986 Abstract: 2SC5358 Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C	OCR Scan	2SC5358 2SA1986 2SA1986 2SC5358	PDF
2SA1986 Abstract: 2SC5358 Contextual Info: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3	OCR Scan	2SC5358 2SA1986 I--2--31 2SA1986 2SC5358	PDF
Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C	OCR Scan	2SC5358 2SA1986	PDF
C5358 Abstract: 2SC5358 2SA1986 2SC535 Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C	Original	2SC5358 2SA1986 C5358 2SC5358 2SA1986 2SC535	PDF
Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C	Original	2SC5358 2SA1986	PDF
C5358 Abstract: 2SA1986 2SC5358 Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C	Original	2SC5358 2SA1986 C5358 2SA1986 2SC5358	PDF
C5358 Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C	Original	2SC5358 2SA1986 2-16C1A C5358	PDF
2SC5358 Abstract: 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5358 APPLICATIONS	Original	2SA1986 -230V 2SC5358 -230V 2SC5358 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER	PDF
C5358 Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C	Original	2SC5358 2SA1986 2-16C1A C5358	PDF
Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C	Original	2SC5358 2SA1986	PDF
Contextual Info: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C	OCR Scan	2SC5358 2SA1986 2-16C1A	PDF
A1986 Abstract: 2SA1986 2SC5358 Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1986 2SC5358 A1986 2SA1986 2SC5358	PDF
A1986 Abstract: 2SA1986 2SC5358 Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1986 2SC5358 A1986 2SA1986 2SC5358	PDF
A1986 Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1986 2SC5358 2-16C1A A1986	PDF

Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage	Original	2SA1986 2SC5358 2-16C1A	PDF
2SA1986 Abstract: 2SC5358 Contextual Info: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C	OCR Scan	2SA1986 2SC5358 2SA1986 2SC5358	PDF
ta 80w Contextual Info: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3	OCR Scan	2SA1986 2SC5358 ta 80w	PDF
2SC5358 Abstract: 2SA1986 Contextual Info: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C	OCR Scan	2SA1986 2SC5358 2SC5358 2SA1986	PDF
SMD TRANSISTOR H2A NPN Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original		PDF
2SA1941 amp circuit Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including	Original	BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943	PDF
2sC5200, 2SA1943 Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current	Original	BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent	PDF
2sc5088 horizontal transistors Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.	Original	BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a	PDF
smd transistor h2a Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output	Original	BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01	PDF

2SC5358 TRANSISTOR SPECIFICATION Search Results

2SC5358 TRANSISTOR SPECIFICATION Result Highlights (5)

2SC5358 TRANSISTOR SPECIFICATION Datasheets Context Search

2SA1986

2SA1986

C5358

C5358

C5358

2SC5358

C5358

A1986

A1986

A1986

2SA1986

ta 80w

2SC5358

SMD TRANSISTOR H2A NPN

2SA1941 amp circuit

2sC5200, 2SA1943

2sc5088 horizontal transistors

smd transistor h2a

GT30F131