2SC5376 Search Results

Contextual Info: TOSHIBA 2SC5376 T O SH IB A TRANSISTO R SILICON NPN EPITAXIAL TYPE 2SC5376 A U D IO FREQUENCY G ENERAL PURPOSE A M PLIFIER APPLIC ATIO NS Unit in mm FOR M U T IN G A N D SW ITCH IN G APPLICATIO NS 1.610.2 0.8 ± 0 . 1, • Low Collector Saturation Voltage : V c e sat (l) = 15mV (Typ.)

2SC5376

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •

2SC5376

Contextual Info: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS • Low Collector Saturation Voltage : V ce sat (l) = 15mV (Typ.) @ Iq = 10mA /Ig = 0.5mA

2SC5376F

Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) · High Collector Current: IC = 400 mA (max)

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •

2SC5376FV

Abstract: sat 1205
Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) 1.2±0.05 0.32±0.05 Low Collector Saturation Voltage: 0.22±0.05 •

2SC5376

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ·

2SC5376F

Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)

Contextual Info: 2SC5376 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376 Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Unit: mm Low collector saturation voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA •

Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) • High Collector Current: IC = 400 mA (max)

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA 0.4 1 2 3 Rating Unit Collector-base voltage

1005 7J

Abstract: 2SC5376CT BK500
Contextual Info: 2SC5376CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5376CT General Purpose Amplifier Applications Switching and Muting Switch Applications Unit: mm 0.6±0.05 @IC = 10 mA/IB = 0.5 mA ３ 1.0±0.05 • Large collector current: IC = 400 mA (max)

Contextual Info: T O SH IB A 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS Low Collector Saturation Voltage : Vc e sat (l) = 15mV (Typ.) @ l£ = 10mA / 1]3 = 0.5mA

2SC5376F

Contextual Info: 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications • Low Collector Saturation Voltage: VCE sat (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • High Collector Current: IC = 400 mA (max)

Contextual Info: TOSHIBA 2SC5376 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5376 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AN D SWITCHING APPLICATIONS • Low Collector Saturation Voltage : VCE sat W = 15mV (Typ.) @ 1(3 = 10mA / Ig —0.5mA

Contextual Info: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)

2SC5376F

Contextual Info: 2SC5376F 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376F ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準) •

BK500

Abstract: 1005 7J
Contextual Info: 2SC5376CT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376CT ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm 0.6±0.05 • コレクタ電流が大きい ３ 0.65±0.02 コレクタ飽和電圧が低い: VCE sat (1) = 15 mV (標準)

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage

2SC5376FV

Contextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage

2SC5376

Contextual Info: 2SC5376 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5376 ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE sat (1) = 15 mV (標準)

Contextual Info: Reliability Tests Report Product Name: 2SC5376 Package Name: SSM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s