2SC542 Search Results

transistor 0618

Contextual Info: TOSHIBA 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR M EDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS VCBO = 1700V VCE sat = 3V (Max.) tf=0.15/¿s (Typ.)

Contextual Info: TO SH IB A 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

2SC5421

Contextual Info: 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.) Unit: mm

2SC5421

Abstract: 8040pe
Contextual Info: TOSHIBA 2SC5421 2SC5421 T O S H IB A TRA N SIST O R SILICON NPN TRIPLE D IFFUSED M E S A TYPE Unit in mm H O RIZO N T A L DEFLECTIO N O U TPU T FOR SU PER HIGH RESO LU TIO N D ISPLA Y, C O LO R TV HIGH SPEED SW ITC H IN G A PPLIC A TIO N S n High Voltage :V^BO = 1500 V

2069B

Abstract: 2SC5420
Contextual Info: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

Contextual Info: 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5423

Contextual Info: Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP

2SC5423

Contextual Info: Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

2SC5421

Contextual Info: 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.) Unit: mm

Contextual Info: 2SC5421 T O SH IB A TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r 1 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS • • High Voltage : V ^ b o —1500V Low Saturation Voltage : V cE sat = 3V (Max.)

2sc5422

Contextual Info: 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE sat = 3 V (Max.)

Contextual Info: TOSHIBA 2SC5421 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, CO LO R TV • • High Voltage :V^ b O = 1500 V Low Saturation Voltage : V qj ; sat = 3 V (Max.)

NJ 15 U1 W

Abstract: 2SC5422
Contextual Info: TOSHIBA 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV 20.5MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

Contextual Info: 2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

2SC5423

Abstract: VCBO1700V
Contextual Info: Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V 1700 V 600 V 5 V 30 A 15 A 10 A VCES Collector to emitter voltage

2069B

Abstract: 2SC5420
Contextual Info: Ordering number:EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

Contextual Info: Power Transistors 2SC5428 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP

2sc5422

Abstract: 2sc5422 data
Contextual Info: 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage Unit: mm : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

Contextual Info: TOSHIBA 2SC5422 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE <;r i i H O R IZO N TA L DEFLECTION OUTPUT FOR M E D IU M RESOLUTION DISPLAY H D TV , COLOR TV HIGH SPEED SW ITCHING APPLICATIONS • High Voltage : Y q ^ q = 1700Y • Low Saturation Voltage

2SC5422

Contextual Info: 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage Unit: mm : VCBO = 1700 V Low Saturation Voltage : VCE sat = 3 V (Max.)

2sc5422

Abstract: toshiba marking code transistor tv toshiba
Contextual Info: 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit: mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS z High Voltage : VCBO = 1700 V z Low Saturation Voltage : VCE sat = 3 V (Max.)

NPN Transistor VCEO 1000V

Abstract: 2SC5420 1000V 20A transistor
Contextual Info: Ordering number : EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . • High reliability (Adoption of HVP process). • Adoption of MBIT process.

2SC5428

Abstract: 5453 A
Contextual Info: Power Transistors 2SC5428 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1500 V VCES 1500 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and