2SC547 Search Results

2SC5474

Abstract: SS-Mini 3 IC1001
Contextual Info: Transistor 2SC5474 Tentative Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 1.6±0.15 Parameter Symbol Ratings Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V Collector current

Contextual Info: Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage

Contextual Info: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type Unit: mm φ 3.2±0.1 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature

transistor 2SC5478

Abstract: 2SC5478
Contextual Info: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C 23.4 (4.5) (1.2) 5˚ 0.7±0.1 Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage

2SC5472

Contextual Info: Transistor 2SC5472 Silicon NPN epitaxial planar type 0.425 Unit: mm For low-voltage low-noise high-frequency oscillation M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 Symbol Rating Unit VCBO 9 V Collector to emitter voltage

2SC5474

Abstract: SC-75
Contextual Info: Transistor 2SC5474 Tentative Silicon NPN epitaxial planar type Unit: mm For low-voltage low-noise high-frequency oscillation 0.2+0.1 –0.05 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 0.8±0.1 1.6±0.15 1˚ • Features (0.4) 2 5˚ 0.75±0.15

2SC5473

Contextual Info: Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 • Features +0.1 0.3 0.2±0.1 Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO

EN6069

Contextual Info: Ordering ruimber:EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 ISAflmi 85V/3A Driver Applications Applications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . Package Dimensions unitrmm

Hitachi DSA002747

Contextual Info: 2SC5470 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition December 1997 Target Specification Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec typ. at fH = 64kHz Outline TO–3PL

Hitachi DSA002779

Contextual Info: 2SC5470 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition May 1998 Features • • High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 µsec typ. at fH=64kHz Outline 2SC5470 Absolute Maximum Ratings (Ta = 25C)

telephone IC panasonic

Abstract: SSMIni SS-Mini 3 SS-Mini 2SC5474
Contextual Info: Panasonic Transistor 2SC5474 Tentative Silicon NPN epitaxial planer type For low -voltage low -noise high-frequency oscillation U nit: mm 1.6+0.15 • Features 0.4 • High transition frequency fT. • High gain of 8.9dB and low noise of 1.8dB at 3V. • Optimum for RF am plification of a portable telephone and

2SC5473

Contextual Info: Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit: mm 2.1±0.1 • Features +0.1 0.3 0.2±0.1 Symbol Ratings Unit Collector to base voltage VCBO 9 V Collector to emitter voltage VCEO

EN6069

Abstract: 2041A TA-1387 2SC5476 TA1387 2SC547
Contextual Info: Ordering number:EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions • Suitable for use in sw itching o f L load motor unir.mm drivers, printer hammer drivers, relay drivers . 2041A

2SC5478

Contextual Info: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type Unit: mm • Absolute Maximum Ratings TC = 25°C Collector to base voltage VCBO 1 700 V Collector to emitter voltage VCES 1 700 V VCEO 600 V Emitter to base voltage VEBO 7 V Peak collector current

2SC5478

Contextual Info: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage

telephone IC panasonic

Contextual Info: Panasonic Transistor 2SC5473 Tentative Silicon NPN epitaxial planer type For low -voltage low -noise high-frequency oscillation • U nit: mm Features • High transition frequency fT. • High gain of 8.9dB and low noise of 1.8dB at 3V. • Optimum for RF am plification of a portable telephone and

Hitachi DSA001650

Contextual Info: 2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 Z 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz Outline TO–3PFM 1 1. Base

Contextual Info: Transistor 2SC5474 Tentative Silicon NPN epitaxial planar type Unit: mm For low-voltage low-noise high-frequency oscillation 0.2+0.1 –0.05 0.15+0.1 –0.05 3 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) M Di ain sc te on na tin nc ue e/ d • High transition frequency fT

2sc5470

Contextual Info: 2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output HITACHI Features • High breakdown voltage VCB0= 1500 V • High speed switching tf = 0.15 |Asec typ. atfH=64kHz Outline T O -3P FM 1. Base 2. Collector 3. Emitter ADE-208-672 (Z)

2SC5472

Contextual Info: Transistors 2SC5472 Silicon NPN epitaxial planer type 0.425 Unit: mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 –0.0 0.15+0.10 –0.05 Symbol Rating Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V

Contextual Info: Panasonic Transistor 2SC5472 Tentative Silicon NPN epitaxial planer type For low -voltage low -noise high-frequency oscillation • U n it: m m 0.425 Features • High transition frequency fT. • High gain of 8.2dB and low noise of 1.8dB at 3V. • Optimum for RF am plification of a portable telephone and

Contextual Info: Transistor 2SC5472 Silicon NPN epitaxial planar type 0.425 Unit: mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 5° M Di ain sc te on na tin nc ue e/ d • High transition frequency fT

2SC5472

Contextual Info: Transistor 2SC5472 Silicon NPN epitaxial planar type 0.425 Unit: mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 –0.0 Rating Unit VCBO 9 V Collector to emitter voltage VCEO 6 V Emitter to base voltage VEBO 1 V Collector current IC 30 mA

2SC5478

Contextual Info: Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type Unit: mm φ 3.2±0.1 Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25°C Ta = 25°C Junction temperature Storage temperature 23.4