2SC560 Search Results

2SC5436

Abstract: 2SC5600 NEC 821
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

2SC5604

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5604 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz • fT = 25 GHz “UHS0” Ultra High Speed Process technology adopted

2SC5600

Abstract: 2SC5603 marking NT
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low noise operation • 6-pin lead-less minimold package • 2 different built-in transistors (2SC5603, 2SC5600)

2SC5435

Abstract: 2SC5600 IC 14558 5mA25
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: Built-in high-gain transistor

2sc5609

Abstract: 2sc5609 transistor 2SA2021
Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SC5609 0.10+0.05 –0.02 0.33+0.05 –0.02 0.15 min. 5˚ • Features 1.20±0.05 0.80±0.05 3 1 0.23+0.05 –0.02 2 0.15 min. • High foward current transfer ratio hFE

2SC5600

Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

Contextual Info: Ordering number:ENN6403 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC/DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2033A_ Features • Adoption of MBIT processes.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Features  Package  High forward current transfer ratio hFE  Code SSSMini3-F2

Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 5˚ • High forward current transfer ratio hFE • SSS-Mini type package, allowing downsizing and thinning of the

transistor 2sc5607

Abstract: 2SC5607 TA-3603 ENN6403A
Contextual Info: Ordering number : ENN6403A 2SC5607 NPN Epitaxial Planar Silicon Transistor 2SC5607 DC / DC Converter Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2033A Features • • 0.4 0.5 15.0 0.6 •

transistor 1608

Abstract: 2SC5606 2SC5606-T1 PU10781JJ01V0DS MA3510
Contextual Info: データ・シート NPN シリコン RF トランジスタ NPN Silicon RF Transistor 2SC5606 NPN シリコン RF トランジスタ 低雑音・高利得増幅用 3 ピン超小型ミニモールド（19, 1608 PKG） 特 徴 ○高周波発振に最適（~5 GHz）

2SC5606

Abstract: 2SC5606-T1 ultra low noise NPN transistor nec microwave
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

marking 2w

Abstract: 2SC5600 2SC5737
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)

2SC5600

Abstract: transistor 2SC5600 P14999EJ1V0DS00
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5600 NPN SILICON RF TRANSISTOR FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • Flat-lead 3-pin thin-type ultra super minimold t = 0.59 mm

2SC5600

Abstract: Transistor NEC K 3654 2SC5603 NPN C 9013 marking 2c
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA843TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5603, 2SC5600)

2SC5603

Abstract: 2SC5668 NEC k 2134 transistor
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA845TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Ideal for 3.6 to 4.2 GHz oscillation application • 2 different built-in transistors (2SC5603, 2SC5668)

2SC5435

Abstract: 2SC5600 of ic 3915
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA841TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5600) Q1: High gain transistor suited for buffer applications

ge 027

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package M Di ain sc te on na tin nc ue e/ d  Features  High forward current transfer ratio hFE

Contextual Info: Transistors 2SA2021 Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609 Unit: mm 0.33+0.05 –0.02 M Di ain sc te on na tin nc ue e/ d 0.10+0.05 –0.02 1 2 0.15 min. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll

NE66219

Abstract: NEC66219 2SC5606
Contextual Info: NPN SILICON RF TRANSISTOR NE66219 / 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD 19, 1608 PKG FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package

2SC5609

Abstract: 2SA2021G 2SC5609G
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2021G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC5609G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 Th an W is k y

2Sd5609

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5609G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2021G • Package  High forward current transfer ratio hFE  Code SSSMini3-F2 M Di ain

ZO 607 MA

Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)

2SC5606

Abstract: transistor 3504 nec 2SC5606-T1 NEC JAPAN 3504
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold