2SC577 Search Results

2SC5778

Contextual Info: Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0

2SC5777

Abstract: TA-3323
Contextual Info: Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

TA-3317

Abstract: 2SC5774 2SA2062
Contextual Info: Ordering number : ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features • • • Package Dimensions Large current capacitance. Wide ASO and high durability against breakdown.

zo 103 ma

Abstract: 2SC5772 2SC5772FR-TL-E SC-59A
Contextual Info: 2SC5772 Silicon NPN Epitaxial VHF/UHF wide band amplifier REJ03G0755-0200 Previous ADE-208-1390 Preliminary Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Contextual Info: Ordering num ber: ENN6990 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • . Package Dimensions H igh speed. H igh breakdown voltage V C B O -1 6 0 0 V .

2SC5776

Abstract: TA-3322
Contextual Info: Ordering number : ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

L0235

Contextual Info: Ordering num ber: ENN6992 NPN Triple Diffused Planar Silicon Transistor 2SC5778 ISA/iYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • H igh speed. • H igh breakdown voltage VCBO=]6(X V). ■ H igh reliability(A doption o f H V P process).

2SC5778

Abstract: 52003 ta-3321
Contextual Info: Ordering number : ENN6992A 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0

2SC5776

Contextual Info: Ordering number : ENN6990A 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

MAX 232 IC

Abstract: IC tl 072 zo 103 ma 2SC5773 2SC5773JR-TL-E SC-59A
Contextual Info: 2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier REJ03G0756-0300 Rev.3.00 May 09, 2006 Features • High gain bandwidth product fT = 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3

2SC5779

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3

2SC5777

Contextual Info: Ordering number : ENN6991A 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).

2sa2063

Abstract: 2SA20 2SC5775
Contextual Info: Ordering number : ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features • • • Package Dimensions Large current capacitance. Wide ASO and high durability against breakdown.

zo 607 MA 75 722

Abstract: ZO 103 zo 103 ma 2SC5772 Specification zo 607 DSA003640
Contextual Info: 2SC5772 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1390 Z Preliminary 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

2SA2063

Abstract: 2SC5775 D1503
Contextual Info: 2SA2063 / 2SC5775 Ordering number : ENN6988A 2SA2063 / 2SC5775 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 160V / 12A, AF90W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.

TA-3317

Abstract: 2SA2062 2SC5774 D1503 2SA20
Contextual Info: 2SA2062 / 2SC5774 Ordering number : ENN6987A 2SA2062 / 2SC5774 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.

2SC5779

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3

zo 103 ma

Abstract: 2SC5773 DSA003640
Contextual Info: 2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1391 Z Preliminary 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

IC tl 072

Abstract: zo 103 ma 2SC5773 2SC5773JR-TL-E SC-59A
Contextual Info: 2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier REJ03G0756-0200 Previous ADE-208-1391 Preliminary Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 10.8 GHz typ. • High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz

Contextual Info: Ordering number: ENN6987 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 ISMiYOi 140V / 10A, AF 70W Output Applications Features Package Dimensions • Large current capacitance. • W ide ASO and high durability against breakdow n.

Contextual Info: Ordering number : ENN699Ï | NPN Triple Diffused Planar Silicon Transistor _ 2SC5777 ISA/lYOl Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed.

Contextual Info: Ordering n um ber: ENN6988 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 ISAfÍYOi 160V / 12A, AF90W Output Applications Package Dimensions Features * Large current capacitance. • W ide A SO and high durability against breakdow n.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit: mm Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters 4.6±0.2 9.9±0.3