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    2SC586 Search Results

    2SC586 Datasheets (33)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SC586
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 51.16KB 1
    2SC586
    Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF 35.04KB 1
    2SC586
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 44.21KB 1
    2SC586
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.86KB 1
    2SC586
    Unknown Japanese Transistor Cross References (2S) Scan PDF 36.18KB 1
    2SC586
    Unknown Cross Reference Datasheet Scan PDF 37.78KB 1
    2SC586
    Unknown Transistor Replacements Scan PDF 72.4KB 1
    2SC586
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.69KB 1
    2SC586
    Unknown Transistor Substitution Data Book 1993 Scan PDF 34.52KB 1
    2SC586
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.12KB 1
    2SC586
    Unknown Vintage Transistor Datasheets Scan PDF 49.23KB 1
    2SC586
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 124.63KB 1
    2SC586
    Unknown The Japanese Transistor Manual 1981 Scan PDF 112.69KB 2
    2SC586
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 43.84KB 1
    2SC5863
    Panasonic Mini3-G1 Original PDF 74.01KB 3
    2SC58630QL
    Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 300VCEO 70MA MINI-3 Original PDF 3
    2SC5865
    ROHM Transistors High voltage discharge, High speed switching, Low Noise (60V, 1A) Original PDF 66.71KB 5
    2SC5865TLQ
    ROHM High speed switching Transistor; Package: TSMT3; Constitution materials list: Packing style: taping; Package quantity: 3000; Original PDF 66.76KB 5
    2SC5865TLQ
    ROHM Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 60V 1A TSMD3 TR Original PDF 4
    2SC5865TLR
    ROHM TRANSISTOR NPN 60V 1A TSMD3 TR Original PDF 66.76KB 5
    SF Impression Pixel

    2SC586 Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor 2SC5866TLR

    TRANS NPN 60V 2A TSMT3
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    2SC5866TLR Reel 18,000 3,000
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    Verical 2SC5866TLR 31,747 294
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    ROHM Semiconductor 2SC5868TLQ

    TRANS NPN 60V 0.5A TSMT3
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    ROHM Semiconductor 2SC5866TLQ

    TRANS NPN 60V 2A TSMT3
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    DigiKey () 2SC5866TLQ Digi-Reel 5,156 1
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    2SC5866TLQ Reel 3,000 3,000
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    Mouser Electronics 2SC5866TLQ 6,988
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    Verical () 2SC5866TLQ 45,579 307
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    2SC5866TLQ 29,588 400
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    2SC5866TLQ 3,000 309
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    Newark 2SC5866TLQ Bulk 4,775 5
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    Quest Components 2SC5866TLQ 23,670
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    TME 2SC5866TLQ 1
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    Chip One Stop 2SC5866TLQ Cut Tape 45,579 0 Weeks, 1 Days 5
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    ROHM Semiconductor 2SC5868TLR

    TRANS NPN 60V 0.5A TSMT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () 2SC5868TLR Cut Tape 2,980 1
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    2SC5868TLR Digi-Reel 2,980 1
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    2SC5868TLR Reel 3,000
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    ComSIT USA 2SC5868TLR 29,250
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    ROHM Semiconductor 2SC5865TLR

    TRANS NPN 60V 1A TSMT3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SC5865TLR Reel 3,000
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    2SC586 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 2SA2094 Datasheet PNP -2A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -2A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5866 3) Low VCE sat) VCE(sat)= -0.50V(Max.) (IC/IB= -1A / -0.1A)


    Original
    2SA2094 2SC5866 SC-96) R1102A PDF

    2SC5866

    Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original
    2SC5866 200mV 2SA2094 2SC5866 PDF

    Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 1A 2SC5865 Features 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and


    Original
    2SC5865 200mV 500mA, 2SA2092. R1120A PDF

    2SA2090

    Abstract: 2SC5868 2SA20
    Contextual Info: 2SC5868 Transistors Medium power transistor 60V, 0.5A 2SC5868 zExternal dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)


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    2SC5868 500mA) 100mA, 2SA2090 2SA2090 2SC5868 2SA20 PDF

    Contextual Info: 2SC5866 Datasheet NPN 2A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 2A TSMT3 Collector Base Emitter 2SC5866 SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2094 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original
    2SC5866 SC-96) 2SA2094 R1102A PDF

    2SC5868

    Abstract: Q2SC5868 Diode 1588 1588
    Contextual Info: SPICE PARAMETER 2SC5868 by ROHM TR Div. * 2SC5868 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5868 NPN + IS=120.00E-15 + BF=307.96 + VAF=100 + IKF=.76113 + ISE=120.00E-15 + NE=1.3985 + BR=6.1588 + VAR=100 + IKR=4.8827 + ISC=2.8942E-12 + NC=1.3100 + NK=.76124


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    2SC5868 Q2SC5868 00E-15 8942E-12 521E-3 151E-12 141E-12 75E-12 2SC5868 Diode 1588 1588 PDF

    2SA20

    Abstract: 2SA2090 2SC5868
    Contextual Info: Medium power transistor 60V, 0.5A 2SC5868 Dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 Applications Small signal low frequency amplifier High speed switching 0.6 1.0MAX 0.85 0.7 0.1 0.3 (1) Base (2) Emitter (3) Collector 0.16 (2) 0.95 0.95 2.8 1.6


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    2SC5868 500mA) 100mA, 2SA2090 R1120A 2SA20 2SA2090 2SC5868 PDF

    2SC5863

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


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    2002/95/EC) 2SC5863 2SC5863 PDF

    2SC5863

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2.8+0.2 –0.3 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


    Original
    2002/95/EC) 2SC5863 2SC5863 PDF

    2SC5863

    Contextual Info: Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 5˚


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    2SC5863 2SC5863 PDF

    2SA2090

    Abstract: 2SC5868
    Contextual Info: 2SC5868 Transistors Medium power transistor 60V, 0.5A 2SC5868 zExternal dimensions (Unit : mm) TSMT3 0.4 (1) (3) 1.9 0.3 0.6 1.0MAX 0.85 0.1 (1) Base (2) Emitter (3) Collector 0.7 0.16 (2) 0.95 0.95 2.8 1.6 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA)


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    2SC5868 500mA) 100mA, 2SA2090 2SA2090 2SC5868 PDF

    Q2SC5865

    Abstract: 2SC5865 29074 RE15
    Contextual Info: SPICE PARAMETER 2SC5865 by ROHM TR Div. * 2SC5865 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5865 NPN + IS=210.00E-15 + BF=290.74 + VAF=100 + IKF=2.3742 + ISE=210.00E-15 + NE=1.4873 + BR=6.2437 + VAR=100 + IKR=.20317 + ISC=10.807E-12 + NC=1.4600 + NK=.88338


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    2SC5865 Q2SC5865 00E-15 807E-12 460E-3 18E-12 534E-12 48E-12 2SC5865 29074 RE15 PDF

    2SC5866

    Abstract: 2SA20 2SA2094
    Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95


    Original
    2SC5866 200mV 2SA2094 R1120A 2SC5866 2SA20 2SA2094 PDF

    2SC5863

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


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    2002/95/EC) 2SC5863 2SC5863 PDF

    2SC5866

    Abstract: 6008E-12
    Contextual Info: SPICE PARAMETER 2SC5866 by ROHM TR Div. * 2SC5866 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5866 NPN + IS=270.00E-15 + BF=230.08 + VAF=100 + IKF=3.6536 + ISE=270.00E-15 + NE=1.4864 + BR=7.8806 + VAR=100 + IKR=.34994 + ISC=7.6008E-12 + NC=1.4061 + NK=.76747


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    2SC5866 Q2SC5866 00E-15 6008E-12 000E-3 568E-3 43E-12 343E-12 2SC5866 6008E-12 PDF

    Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95


    Original
    2SC5866 200mV 2SA2094 2SC5866 R1120A PDF

    2SA2092

    Abstract: 2SC5865 2SA20
    Contextual Info: 2SC5865 Transistors High voltage discharge, High speed switching, Low Noise 60V, 1A 2SC5865 zApplications High speed switching, Low noise zDimensions (Unit : mm) TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 0~0.1 0.3~0.6 zFeatures 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A)


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    2SC5865 200mV 500mA, 2SA2092. 2SA2092 2SC5865 2SA20 PDF

    2SC5862

    Abstract: IC2003 Hitachi DSA00280
    Contextual Info: 2SC5862 Silicon NPN Epitaxial ADE-208-1482 Z Rev.0 Feb. 2002 Features • Low frequency amplifier Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5862 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 50


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    2SC5862 ADE-208-1482 2SC5862 IC2003 Hitachi DSA00280 PDF

    Contextual Info: Medium power transistor 60V, 2A 2SC5866 Dimensions (Unit : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector Applications Low frequency amplifier High speed switching 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95


    Original
    2SC5866 200mV 2SA2094 R1120A PDF

    2SC5866

    Abstract: 2SA2094
    Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 !External dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 !Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original
    2SC5866 200mV 2SA2094 2SC5866 2SA2094 PDF

    2SC5863

    Contextual Info: Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO • High transition frequency fT 5˚


    Original
    2SC5863 2SC5863 PDF

    2SA2092

    Abstract: 2SC5865
    Contextual Info: High voltage discharge, High speed switching, Low Noise 60V, 1A 2SC5865 Dimensions (Unit : mm) Features 1) High speed switching. ( Tf : Typ. : 50ns at IC = 1.0A) 2) Low saturation voltage, typically. (Typ. : 200mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and


    Original
    2SC5865 200mV 500mA, 2SA2092. R1120A 2SA2092 2SC5865 PDF

    2SC5866

    Abstract: 2SA20 2SA2094
    Contextual Info: 2SC5866 Transistor Medium power transistor 60V, 2A 2SC5866 zExternal dimensions (Units : mm) 2.8 1.6 0.4 (1) (3) 1.9 (1)Base (2)Emitter (3)Collector 0.3 0.6 1.0MAX 0.85 Each lead has same dimensions 0.1 0.7 0.16 (2) 0.95 0.95 TSMT3 2.9 zFeatures 1) High speed switching. (Tf : Typ. : 35ns at IC = 2A)


    Original
    2SC5866 200mV 2SA2094 2SC5866 2SA20 2SA2094 PDF

    2SC5863

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5863 Silicon NPN epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • High collector-emitter voltage (Base open) VCEO


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    2002/95/EC) 2SC5863 2SC5863 PDF