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    2SC5876 Price and Stock

    ROHM Semiconductor 2SC5876U3HZGT106Q

    TRANS NPN 60V 0.5A UMT3
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    ROHM Semiconductor 2SC5876U3T106

    TRANS NPN 60V 0.5A UMT3
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    ROHM Semiconductor 2SC5876T106Q

    TRANS NPN 60V 0.5A UMT3
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    DigiKey 2SC5876T106Q Digi-Reel 6,361 1
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    ROHM Semiconductor 2SC5876T106R

    TRANS NPN 60V 0.5A UMT3
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    DigiKey 2SC5876T106R Cut Tape 1,611 1
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    ROHM Semiconductor 2SC5876U3T106Q

    2SC5876U3T106Q
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    Quest Components 2SC5876U3T106Q 1,461
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    Find more 2SC5876 price and stock on Findchips.com

    2SC5876 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5876 ROHM Medium power transistor (60V, 0.5A) Original PDF
    2SC5876 ROHM Medium power transistor (60V, 0.5A) Original PDF
    2SC5876T106Q ROHM Medium Power Transistor (60 V, 0.5 A) Original PDF
    2SC5876T106Q ROHM TRANS NPN 60V 0.5A SOT-323 Original PDF
    2SC5876T106R ROHM Medium Power Transistor (60 V, 0.5 A) Original PDF
    2SC5876T106R ROHM TRANS NPN 60V 0.5A SOT-323 Original PDF
    2SC5876U3T106 Rohm Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 2SC5876U3 IS THE HIGH SPEED SWIT Original PDF

    2SC5876 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA2088

    Abstract: 2SC5876 T106
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A 2SA2088 2SC5876 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A AEC-Q101 Qualified 2SC5876FRA 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF AEC-Q101 2SC5876FRA 500mA) 150mV 100mA, 2SA2088FRA 2SA2088 R1120A

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SA2088 2SC5876 T106

    2SC5876

    Abstract: 2SA2088 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 !External dimensions (Units : mm) !Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SC5876 2SA2088 T106

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) 0.3 (3) (2) UMT3 0.65 0.65 Dimensions (Unit : mm) 0.7 Features 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 R1120A

    2SC5876

    Abstract: 2SA20 2SA2088 T106
    Text: 2SC5876 Transistor Medium power transistor 60V, 0.5A 2SC5876 2.0 1.3 0.9 (1) (2) (3) 0.3 0.65 0.65 UMT3 0.7 zExternal dimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF 2SC5876 500mA) 150mV 100mA, 2SA2088 2SC5876 2SA20 2SA2088 T106

    Diode 1588

    Abstract: Q2SC5876 2SC5876
    Text: SPICE PARAMETER 2SC5876 by ROHM TR Div. * 2SC5876 NPN BJT model * Date: 2006/11/13 .MODEL 2SC5876 NPN + IS=120.00E-15 + BF=307.96 + VAF=100 + IKF=.76113 + ISE=120.00E-15 + NE=1.3985 + BR=6.1588 + VAR=100 + IKR=4.8827 + ISC=2.8942E-12 + NC=1.3100 + NK=.76124


    Original     		PDF 2SC5876 Q2SC5876 00E-15 8942E-12 521E-3 151E-12 141E-12 75E-12 Diode 1588 2SC5876

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    2V1000

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A 2V1000

    2SA20

    Abstract: 2SA2088 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 zExternal dimensions (Unit : mm) UMT3 2.0 0.9 0.2 0.3 0.7 (1) 0.65 0.65 1.3 0.15 0.1Min. (2) 2.1 (3) 1.25 zFeatures 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA) 2) Low saturation voltage, typically


    Original     		PDF 2SA2088 -500mA) -150mV -100mA, -10mA) 2SC5876 2SA20 2SA2088 2SC5876 T106

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Untitled

    Abstract: No abstract text available
    Text: AEC-Q101 Qualified Medium power transistor 60V, 0.5A 2SA2088FRA Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA)


    Original     		PDF AEC-Q101 2SA2088FRA 500mA) 150mV 100mA, 2SC5876FRA 2SC5876 R1120A

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)


    Original     		PDF 2SA2088 SC-70) OT-323> -500mA) -150mV -100mA, -10mA) 2SC5876 2SA2088 2SC5876 T106

    pioneer mosfet audio amp ic

    Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114
    Text: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great


    Original     		PDF 2008-Feb. SC-75A OT-416 50P5876E pioneer mosfet audio amp ic 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114

    2SC6144

    Abstract: IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114
    Text: 2010 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal and low profile models to high power products.


    Original     		PDF R0039A 52P6215E 2SC6144 IMD16A potential divider 2SA1576UB DTD513Z MP6T3 2SCR514 2SA1514K equivalent 2SCR543 2SC6114

    2sc5922

    Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
    Text: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability


    Original     		PDF 200mW 500mW 15Min. 85Max. 15Max. 2sc5922 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982

    2SA2088

    Abstract: 2SC5876 T106
    Text: 2SA2088 Transistors Medium power transistor −60V, −0.5A 2SA2088 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 UMT3 (SC-70) <SOT-323> 0.7 !External dimensions (Unit : mm) 1.25 0.2 2.1 0.15 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = −500mA)


    Original     		PDF 2SA2088 SC-70) OT-323> -500mA) -150mV -100mA, -10mA) 2SC5876 2SA2088 2SC5876 T106

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A

    2SA1576UB

    Abstract: 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703
    Text: 2009 Product Catalog Discrete Semiconductors Bipolar Transistors Digital Transistors Bipolar Transistors ROHM bipolar transistors were developed to be energy efficient, highly reliable, and compact. A wide range of products are offered, from small-signal an low profile models to high power products.


    Original     		PDF R0039A 51P6029E 2SA1576UB 2SC1740s equivalent transistor digital 47k 22k PNP NPN 2sd198 2SC6114 2sc401 2SB1240 2SB1694 2SC5865 2sD2703

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 60V, 0.5A 2SA2088 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 60ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		PDF 2SA2088 500mA) 150mV 100mA, 2SC5876 R1120A