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    Panasonic Electronic Components 2SC5939G0L

    RF TRANS NPN 10V 0.05A SSSMINI3
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    Panasonic Electronic Components 2SC593900L

    RF TRANS NPN 10V 0.05A SSSMINI3
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    2SC593 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC593 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC593 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC593 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC593 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC593 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC593 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC593 Unknown Vintage Transistor Datasheets Scan PDF
    2SC593 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC593 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC593 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC593 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC593 Unknown Cross Reference Datasheet Scan PDF
    2SC5930 Toshiba Transistor Silicon NPN Triple Diffused Type (PCT Process) Original PDF
    2SC5930(T2MITUM,FM Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 600V SC71 Original PDF
    2SC5930(TPF2,F,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 1A 600V SC71 Original PDF
    2SC5931 Panasonic Silicon NPN triple diffusion mesa type Original PDF
    2SC5932 Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF
    2SC5933 Sanyo Semiconductor 2SC5933 Original PDF
    2SC5933 Sanyo Semiconductor Horizontal Deflection Switching Transistors Original PDF
    2SC5934 Sanyo Semiconductor Low-Saturation Voltage Transistors Original PDF

    2SC593 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb


    Original     		PDF 2002/95/EC) 2SC5939G

    C5931

    Abstract: 2SC5931 C5931 Transistor Horizontal monitor EHT
    Text: Power Transistors 2SC5931 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm 23.4 (4.5) (2.0) (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf < 200 ns • Wide safe operation area


    Original     		PDF 2SC5931 C5931 2SC5931 C5931 Transistor Horizontal monitor EHT

    Untitled

    Abstract: No abstract text available
    Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)


    Original     		PDF 2SC5930

    2-7D101A

    Abstract: 2SC5930
    Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • Unit: mm High-speed switching: tf = 0.3 s (max) (IC = 0.3 A)


    Original     		PDF 2SC5930 2-7D101A 2SC5930

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SC5935

    2SC5938A

    Abstract: RT3C99M
    Text: RT3C99M Composite Transistor For Muting Application Silicon Npn Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C99M is a composite transistor built with two 2.1 2SC5938A chips in SC-88 package. ① ⑥ 0.65 ② ⑤ 0.65 FEATURE ③ ④ Silicon NPN epitaxial type


    Original     		PDF RT3C99M RT3C99M 2SC5938A SC-88 JEITASC-88

    2SC5939

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm M Di ain sc te on na tin nc ue e/ d 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02


    Original     		PDF 2002/95/EC) 2SC5939 2SC5939

    2SC5935

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 Parameter Symbol


    Original     		PDF 2002/95/EC) 2SC5935 2SC5935

    IC 74173

    Abstract: 2SC5933 74171
    Text: Ordering number : ENN7417 2SC5933 NPN Triple Diffused Planar Silicon Transistor 2SC5933 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7417 2SC5933 2048B 2SC5933] IC 74173 2SC5933 74171

    2SC5935

    Abstract: No abstract text available
    Text: Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		PDF 2SC5935 2SC5935

    IC 74173

    Abstract: 74171 N2503 2SC5933 N7417
    Text: 注文コード No. N 7 4 1 7 2SC5933 No. N7417 N2503 新 NPN 三重拡散プレーナ形シリコントランジスタ 2SC5933 特長 超高精細度 CRT ディスプレイ 水平偏向出力用 ・高速度である。 ・高耐圧である （VCBO=1600V）


    Original     		PDF 2SC5933 N7417 N2503 2048B IT03589 IT03590 IT03581 IT03591 IC 74173 74171 N2503 2SC5933 N7417

    Untitled

    Abstract: No abstract text available
    Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)


    Original     		PDF 2SC5930

    2SC5938

    Abstract: RT3C55M
    Text: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.


    Original     		PDF RT3C55M RT3C55M 2SC5938 SC-88 JEITASC-88

    2SC5938

    Abstract: LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC5938 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit: : mm ISAHAYA 2SC5938 is a super mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application


    Original     		PDF 2SC5938 2SC5938 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02


    Original     		PDF 2002/95/EC) 2SC5939

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SC5935

    Untitled

    Abstract: No abstract text available
    Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)


    Original     		PDF 2SC5930 2-7D101A

    2SC5934

    Abstract: 2SA2117
    Text: Ordering number : ENN7906 2SA2117 / 2SC5934 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • •


    Original     		PDF ENN7906 2SA2117 2SC5934 2SA2117 2SC5934

    IC 74164

    Abstract: ic 74163 IC 74161 2SC5932
    Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7416 2SC5932 2048B 2SC5932] IC 74164 ic 74163 IC 74161 2SC5932

    2SC5939

    Abstract: No abstract text available
    Text: Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.10+0.05 –0.02 0.33+0.05 –0.02 • Features 2 0.15 min. 1 0.23+0.05 –0.02 0.15 min. 5˚ 0.80±0.05 1.20±0.05 3 • High transition frequency fT


    Original     		PDF 2SC5939 2SC5939

    2SA2117

    Abstract: 2SC5934
    Text: Ordering number : ENN7906 2SA2117 / 2SC5934 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2117 / 2SC5934 High Current Switching Applications Applications • Package Dimensions Relay drivers, lamp drivers, motor drivers. unit : mm 2041A Features • 3.2


    Original     		PDF ENN7906 2SA2117 2SC5934 2SC5934] 2SA2117 O-220ML 2SC5934

    2SC5930

    Abstract: 2-7D101A C5930
    Text: 2SC5930 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5930 High-Speed and High-Voltage Switching Applications Switching Regulator Applications Unit: mm DC-DC Converter Applications • High-speed switching: tf = 0.3 µs (max) (IC = 0.3 A)


    Original     		PDF 2SC5930 2SC5930 2-7D101A C5930

    ic 74163

    Abstract: IC 74164 IC 74161 IC 7416 2SC5932 2SC593
    Text: Ordering number : ENN7416 2SC5932 NPN Triple Diffused Planar Silicon Transistor 2SC5932 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • High speed. High breakdown voltage VCBO=1600V . High reliability(Adoption of HVP process).


    Original     		PDF ENN7416 2SC5932 2048B 2SC5932] ic 74163 IC 74164 IC 74161 IC 7416 2SC5932 2SC593

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5939 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.33+0.05 –0.02 • Features 0.10+0.05 –0.02 2 0.15 min. 1 0.23+0.05 –0.02


    Original     		PDF 2002/95/EC) 2SC5939