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    2SC605 Price and Stock

    Panasonic Electronic Components 2SC6054J0L

    TRANS NPN 50V 0.1A SSMINI3
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    2SC605 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC605 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC605 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC605 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC605 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC605 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC605 Unknown Cross Reference Datasheet Scan PDF
    2SC605 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC605 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC605 Unknown (2SC605 / 2SC606) NPN SILICON TRANSISTOR Scan PDF
    2SC605 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC605 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC605 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC605 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC6050 Panasonic Silicon NPN epitaxial planar type For high frequency amplifi cation, oscillation and mixing Original PDF
    2SC6053 Isahaya Electronics FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE Original PDF
    2SC6054G0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50VCEO 100MA SSMINI-3 Original PDF
    2SC6054J Panasonic Transistor for general amplification. Complementary to 2SA2174J Original PDF
    2SC6054J0L Panasonic Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50VCEO 100MA SSMINI-3 Original PDF
    2SC605-B Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC605(B) Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    2SC605 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open)


    Original     		PDF 2002/95/EC) 2SC6054J 2SA2174J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SA2174G 2SC6054G

    2SC6050

    Abstract: No abstract text available
    Text: Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)


    Original     		PDF 2SC6050 2SC6050

    2SA2174J

    Abstract: 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SA2174J 2SC6054J 2SA2174J 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174

    2SC6050

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 3 2 ue pl d in ea an c


    Original     		PDF 2002/95/EC) 2SC6050 2SC6050

    2SA2174J

    Abstract: 2SC6054J 2SA2174
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6054J 2SA2174J 2SA2174J 2SC6054J 2SA2174

    2SA21

    Abstract: 2SA2174G 2SC6054G 2SC6054J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6054G 2SA2174G 2SA21 2SA2174G 2SC6054G 2SC6054J

    2SC6053

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE sat .


    Original     		PDF 2SC6053 2SC6053 650mA SC-59 O-236

    2sc6052

    Abstract: transistor C6052 c6052 C6052 transistor
    Text: 2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 180 to 390 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.20 V (max.) •


    Original     		PDF 2SC6052 2sc6052 transistor C6052 c6052 C6052 transistor

    2SC6050

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SC6050 2SC6050

    2SA2174J

    Abstract: 2SC6054J 2SA21
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SA2174J 2SC6054J 2SA2174J 2SC6054J 2SA21

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6054G 2SA2174G

    2SA2174J

    Abstract: 2SC6054J plm100
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6054J 2SA2174J 2SA2174J 2SC6054J plm100

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6054J 2SA2174J

    2SC6054G

    Abstract: 2SA2174G 2SC6054J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6054G 2SA2174G 2SC6054G 2SA2174G 2SC6054J

    2SA2174J

    Abstract: 2SC6054J
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6054J 2SA2174J 2SA2174J 2SC6054J

    2SA2174J

    Abstract: 2SC6054J
    Text: Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open)


    Original     		PDF 2SA2174J 2SC6054J 2SA2174J 2SC6054J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SC6050

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Features  Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SC6054G 2SA2174G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features  Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic


    Original     		PDF 2002/95/EC) 2SA2174G 2SC6054G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features VCBO −60 V Collector-emitter voltage (Base open) VCEO −50


    Original     		PDF 2002/95/EC) 2SA2174J 2SC6054J

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)


    Original     		PDF 2002/95/EC) 2SC6050

    2SC6058

    Abstract: 2SC6058LS C6058
    Text: 2SC6058LS Ordering number : EN8560 SANYO Semiconductors DATA SHEET 2SC6058LS NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability Ultrahigh-speed switching Wide ASO


    Original     		PDF EN8560 2SC6058LS PW300s, cycle10% 2SC6058 2SC6058LS C6058

    vhf high gain transistor

    Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
    Text: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i


    OCR Scan     		PDF 2SC605 2SC605, 200MHz) 530MHz 2SC606 2SC605 vhf high gain transistor F VHF amplifier VHF amplifier circuit