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    Panasonic Electronic Components 2SD1032

    TRANSISTOR,BJT,NPN,60V V(BR)CEO,4A I(C),TO-218VAR
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    2SD1032 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1032 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD1032 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD1032 Unknown Cross Reference Datasheet Scan PDF
    2SD1032 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1032 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1032 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1032 Panasonic Si NPN triple diffused planar. AF power amplifier. Scan PDF
    2SD1032A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD1032A Unknown Cross Reference Datasheet Scan PDF
    2SD1032A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1032A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1032A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1032A Panasonic Si NPN triple diffused planar. AF power amplifier. Scan PDF
    2SD1032B Unknown Cross Reference Datasheet Scan PDF
    2SD1032B Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1032B Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD1032B Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD1032 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB812

    Abstract: 2SD1032
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB812 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 APPLICATIONS ·Designed for AF power amplifier applications


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    PDF 2SB812 2SD1032 -30mA; 2SB812 2SD1032

    hfe1

    Abstract: 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 APPLICATIONS ·Designed for AF power amplifier applications.


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    PDF 2SD1032 2SB812 hfe1 2SB812 2SD1032 60V transistor npn 3a switching transistor 30v npn

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SD1028

    Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A


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    PDF 2SD1001 2SB800 2SD1002 2SD1003 2SD1004 2SD1005 2SB804 2SD1006 2SB805 2SD1007 2SD1028 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004

    ON3105

    Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
    Text: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S


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    PDF MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 ON3105 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SB832

    Abstract: 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB801 -45 -5 -1A 400 150 100 -2 -150 80* 26 2SB802 -60 -5 -1A


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    PDF 2SB801 2SB802 2SB803 2SB804 2SD1005 2SB805 2SD1006 2SB806 2SD1007 902SB807 2SB832 2sd1047 equivalent 2SB837 2SB843 2SD1077 2sb875 2SB803 2SB818 2sb895 2SB845

    IGNITOR Z 400 M diagram

    Abstract: 2SD1043 2SB812 2SD1032 IC 78 2SD1032A 2SB812A IC4a ic t 4a 8
    Text: PANASONIC INDL/ELEK-CSEtllJ 7EC D | 1 1 3 5 6 5 M □ 7 ^ 3^ / / | 2S D 1032, 2SD 1032A 2SD1032, 2SD1032A '> 1J u > N P N ^ J f c / S i N P N T riple D iffused Planar i f i J O J i f c i l f t l i i S f f l / A F P o w e r A m p lif ie r 2SB 812, 2SB 812A t ^


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    PDF 2SD1032, 2SD1032A 2SB812, 2SB812A 2SB812A 2SD1032 IGNITOR Z 400 M diagram 2SD1043 2SB812 IC 78 2SD1032A IC4a ic t 4a 8

    jc 817

    Abstract: 2SB811 2SD1021 2SD1032 2SD1046 2SD1047 2SD1048
    Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


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    PDF 2sd1068 Tc-25 jc 817 2SB811 2SD1021 2SD1032 2SD1046 2SD1047 2SD1048

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


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    PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SB667

    Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
    Text: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 MN15621 MN110 MN1101 MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 MN1200 - MN1441 MN1201 MN1202 - MN1204


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    PDF MN14T6 MN1418 MN1420 MN1421 MN1425 MN1427 MN1441 MN1442 MN1432 MN1450B 2SB667 MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404