2SD1085 Search Results

2SD1085

Contextual Info: 2SD1085 K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25°C Item TO-220AB Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–

Contextual Info: HITACHI 2SD1085K Silicon NPN Triple Diffused High Voltage Switching, Igniter Absolute Maximum Ratings Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage V EBO 7 V Collector current

2SD1085

Abstract: RE100T
Contextual Info: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220AB 2 h II I I 1 j 2 ,g 1 Base 2 Collector (Flange) 3 Emitter - V\A—I—'WV-Ì- J ki3 4 5 (Typ) 250 Cl (Typ) ¿ 3 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SD1085 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 2 l ì 1 1. Base 2. C ollector (Flange) 3. Emitter 1 2 3 I T — 'WV— ^— 'WV—14-4.5 kQ 250 Q (Typ) (Typ) ¿ 3 Absolute Maximum Ratings (Ta 25 °C)

Contextual Info: 2SD1085K Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300è V(BR)CBO (V)300 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1085

Abstract: Hitachi DSA00164
Contextual Info: 2SD1085 K Silicon NPN Triple Diffused Application High voltage switching, igniter Outline TO-220AB 2 1 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage

Contextual Info: 2 SD1 0 8 5 K Silicon NPN Triple Diffused HITACHI Application High voltage switching, igniter Outline TO -220A B 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^C B O 300 V Collector to em itter voltage VCE0 300

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

2SC4748

Abstract: 2SC5306 K20-K k08 transistor
Contextual Info: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136

sc 3228

Abstract: C3468 2SD2159 2SC 3205 2SD880 2SC3296 2sc3192 2SC2320 c2981 2SD1812
Contextual Info: - 15 6 - §ä « T y p e No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »H m ? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * ' 2SC 3193 / 2SC 3194 2SC 3195 ¿ 2 SC 3196 h n T O S HIBA «am i »am ? 2SC 3199 X

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK