2SD1101 Search Results

MARKING AB

Abstract: 2SD1101
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SD1188

Abstract: 2SD1144 2SD1170 2SD1184 2SD1116 2SD1156 2SD1182 2SD1123 2SD1131 2SD1146
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1101 25 6 700 150 150 140 1 150 2SB831 2SD1102 1200 6 4A 50W(Tc=25ºC) 150

1990 1142

Abstract: Hitachi DSA0076 2SD1101 2SB831 2SD467
Contextual Info: 2SD1101 Silicon NPN Epitaxial ADE-208-1142 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

2SD4672

Abstract: Hitachi DSA002756
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

2SB831

Abstract: 2SD1101 2SD467 Hitachi DSA00395
Contextual Info: 2SD1101 Silicon NPN Epitaxial Application • Low frequency amplifier • Complementary pair with 2SB831 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO

Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

dk qz

Abstract: 2SD1101 2SD467
Contextual Info: HITACHI 2SD1101— SILICON KPN EPITAXIAL LO W FREQ U EN C Y AM PLIFIER Complemeniary Mir wilh 2S3331 O.IC'cf« 1 Fri'i'irf 2 Ha« y. Colico« ¡tïiiiif nviivn in nun \o_ gì MPAK) MAXIMUM COLLECTOR DISSIPATION C URVE • A BSO LU TE MAXIMUM RATINGS (Ta"2S°C)

2SB831

Abstract: 2SB831BBTL-E 2SB831BCTL-E 2SD1101 SC-59A
Contextual Info: 2SB831 Silicon PNP Epitaxial REJ03G0653-0200 Previous ADE-208-1033 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A RENESAS mpak marking code
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

Hitachi DSA002754

Contextual Info: 2SB831 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V

Contextual Info: Transistors IC SMD Type Product specification 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

Contextual Info: 2SB831 Silicon PNP Epitaxial HITACHI Application • Low frequency am plifier • Complementary pair w ith 2SD1101 Outline MPAK 2 1. Emitter 2. Base 3. Collector 219 2SB831 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

2SB831

Abstract: 2SD1101 2SD1101ACTL-E SC-59A
Contextual Info: 2SD1101 Silicon NPN Epitaxial REJ03G0775-0200 Previous ADE-208-1142 Rev.2.00 Aug.10.2005 Application • Low frequency amplifier • Complementary pair with 2SB831 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector

2SB561

Abstract: 2SB831 2SD1101 2SB83
Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQ UEN CY AM PLIFIER Complementary pair with 2SD1101 „ o.i b : ; s !. Emil icr 2. Base Í , Collector <Dimcr«sii?ns in mm MPAK) • ABSO LUTE MAXIMUM RATINGS (Tii=25°C) I lem Symbol MAXIMUM COLLECTOR DISSIPATION

Hitachi DSA0076

Abstract: 2SB561 2SB831 2SD1101
Contextual Info: 2SB831 Silicon PNP Epitaxial ADE-208-1033 Z 1st. Edition Mar. 2001 Application • Low frequency amplifier • Complementary pair with 2SD1101 Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SB831 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings

Contextual Info: 2SD1101 Silicon NPN Epitaxial HITACHI Application • Low frequency amplifier • Complementary pair with 2SB831 Outline 901 2SD1101 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage V cB O 25 V Collector to emitter voltage

Contextual Info: HITACHI 2SB831 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER Complementary pair with 2SD1101 'T*7 ’ ^ I * ? A i: \ “U .4 - . - t '‘ I 0 .9 5 ? C/95 ; £»! S. 2 Base 3. Collector iDirrtcn^Kins ui nsin MPAK) I ABSOLUTE MAXIMUM RATINGS (Ta*.25’ C)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1087

Abstract: 2SD1094 2SD1067 2SD1066 2SD1071 "SCA 62" 2SD1063 2SD1064 2SD1065 2SD1069
Contextual Info: - 234 - æXËtë M S ŒJ f± U=2bX¡, *W(ilc=2bV '4v n n # m tt (Ta=25‘ C) [*EPtttyp0] Pe* (max) (V) (A) (V) <W) (ÏÏ) VcB (V) (/¿A) (min) (max) VCE (V) (max) (V) Ic / I e (A) Ic (A) (V) Ib (A) 2SD1063 PSW 60 50 7 60 100 40 70 280 2 1 0.4 4 2SD1064 PSI

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB561

Abstract: 2SB831 2SD1101
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid