2SD1222 EQUIVALENT Search Results

2SD1222 EQUIVALENT Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FM82DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

2SD1222 EQUIVALENT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
d1222 Abstract: 2sd1222 equivalent 2sD1222 2SB907 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)	Original	2SD1222 2SB907. 15transportation d1222 2sd1222 equivalent 2sD1222 2SB907	PDF
D1222 Abstract: 2SB907 2SD1222 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907. D1222 2SB907 2SD1222	PDF
Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907.	PDF
D1222 Abstract: 2SB907 2SD1222 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907. D1222 2SB907 2SD1222	PDF
d1222 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907. d1222	PDF
Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907.	PDF
D1222 Abstract: 2SB907 2SD1222 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)	Original	2SD1222 2SB907. D1222 2SB907 2SD1222	PDF
D1222 Abstract: 2SD1222 2SB907 Contextual Info: 2SD1222 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) 2SD1222 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 2 A)	Original	2SD1222 2SB907. 15transportation D1222 2SD1222 2SB907	PDF
Contextual Info: TOSHIBA TOSHIBA TRANSISTOR 2SD1222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) WÊÊF mmr SWITCHING APPLICATIONS. U n it in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 5.2+ 0.2 POWER AMPLIFIER APPLICATIONS. j E E if c lL . ö M AX J 0.6tf-	OCR Scan	2SD1222 2SB907.	PDF
2sd1222 equivalent Abstract: 2SB907 2SD1222 Contextual Info: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •	OCR Scan	2SD1222 95MAX. 2SB907. 2sd1222 equivalent 2SB907 2SD1222	PDF
2SD1222 Abstract: 2sd1222 equivalent Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm Cl6 MAX. FEATURES: . High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) . Low Saturation Voltage	OCR Scan	2SD1222 2SB907. 2SD1222 2sd1222 equivalent	PDF
Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1222 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: . High DC Current Gain : ^FE i =2000(Min.) (Vq e =2V, Ic =1A) . Low Saturation Voltage •' VcE(sat)=l-5V(Max.) (Ic=2A)	OCR Scan	2SD1222 2SB907.	PDF
2SB907 Abstract: 2SD1222 Contextual Info: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm (A) HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX., POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; . • •	OCR Scan	2SD1222 95MAX. 2SB907. 2SB907 2SD1222	PDF
Contextual Info: 2SD1222 TOSHIBA TOSHIBA TRANSISTOR SWITCHING APPLICATIONS 2 S D 1 222 SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : ^FE (1) - 2000 (Min.)	OCR Scan	2SD1222 2SB907.	PDF

Contextual Info: TOSHIBA 2SD1222 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS (DARLINGTON) 2 S D 1 222 SWITCHING APPLICATIONS U nit in mm H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 6.8MAX. (A) 5.2 ±0.2 c PO W ER AM PLIFIER APPLICATIONS 0.6 i 0.15 • High DC Current Gain	OCR Scan	2SD1222 1V11I1W 2SB907.	PDF
Contextual Info: SILICON PNP EPITAXIAL TYPE 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8UAX. FEATURES: . High DC Current Gain : h F E l =2000(Min.) (VCE=~2V, IC=-1A) . Low Saturation Voltage : VcE(sat)=-l-5V(Max.) (Ic=-2A)	OCR Scan	2SB907 2SD1222.	PDF
cfl low loss drive Contextual Info: T O SH IB A 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm & 8 MAX. 0.6 MAX. 5 .2 ± D .2 ÏZ • High DC Current Gain	OCR Scan	2SB907 2SD1222. cfl low loss drive	PDF
7550 - 1 Abstract: 2SB907 2SD1222 Contextual Info: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 Unit in mm SWITCHING APPLICATIONS H A M M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain : hpE(i) = 2000 (Min.) (V^E = -2 V , Iq	OCR Scan	2SB907 2SD1222. 7550 - 1 2SB907 2SD1222	PDF
Contextual Info: TOSHIBA 2SB907 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB907 SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS POWER AMPLIFIER APPLICATIONS • • • High DC Current Gain : hFE(i) = 2000 (Min.) (VCE = -2 V , IC = -1 A )	OCR Scan	2SB907 2SD1222.	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222	PDF
transistor B907 Abstract: B907 024 marking code 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907 B907 024 marking code 2SB907 2SD1222	PDF
transistor B907 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222. transistor B907	PDF
Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) •	Original	2SB907 2SD1222.	PDF
transistor B907 Abstract: B907 2SB907 2SD1222 Contextual Info: 2SB907 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB907 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE (1) = 2000 (min) (VCE = −2 V, IC = −1 A) ·	Original	2SB907 2SD1222. transistor B907 B907 2SB907 2SD1222	PDF

2SD1222 EQUIVALENT Search Results

2SD1222 EQUIVALENT Result Highlights (5)

2SD1222 EQUIVALENT Datasheets Context Search

d1222

D1222

D1222

d1222

D1222

D1222

2sd1222 equivalent

2SD1222

2SB907

cfl low loss drive

7550 - 1

transistor B907

transistor B907

transistor B907

transistor B907