2SD125 Search Results

2SD1254

Contextual Info: Transistors SMD Type Silicon NPN epitaxial planar type 2SD1254 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low collector-emitter saturation voltage VCE sat . +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

P13W

Abstract: 2SB930 2SB930A 2SD1253 2SD1253A
Contextual Info: Pow er Tra n sisto rs 2SD1253, 2SD1253A 2SD1253, 2SD1253A Silicon N PN Trip le -D iffu se d Planar Type P ackage D im ension s P ow e r A m plifier C o m p le m e n ta ry Pair with 2SB 930, 2SB 93 0A U nit ! mm • Fe a tu res 8.7 • H igh DC c u r re n t gain <hFE and go o d lin earity

2SD1252

Abstract: 2SD1252A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25

2SD1253

Abstract: 2SD1253A
Contextual Info: Transistors SMD Type Silicon NPN Triple Diffusion Planar Type 2SD1253,2SD1253A TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Features Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1

2SB931

Abstract: 2SD1254
Contextual Info: Power Transistors 2SB931 2SB931 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1254 • Features Unit I mm 8.7 ; • Low collector-emitter saturation voltage VcEisa« • Good linearity of DC current gain

2SB932

Abstract: 2SD1255
Contextual Info: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package D im ensions Power S w itching C om plem entary Pair w ith 2SB932 ■ Features • Low collector-emitter saturation voltage V cf mj • Good linearity of DC current gain (hn.)

2SD1258

Contextual Info: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type Package Dimensions High DC Current Gain hFe , Power Amplifier • Features • High DC current gain (Iife) • Good linearity of DC current gain (hra) • “N Type” package configuration with a cooling fin for direct soldering

2SB934

Abstract: 2SD1257 2SD1257A
Contextual Info: Power Transistors 2SD1 257, 2SD1257A 2SD1257, 2S D 1257A Silicon NPN Epitaxial Planar Type • Package D im ensions Power Sw itching C om plem entary Pair w ith 2SB934 ■ Features • L ow c o lle c t o r - e m itte r sa tu r a tio n v o lta g e V<_e (Sat>

Contextual Info: Transistors IC SMD Type Product specification 2SD1250 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 Low collector-emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0934 (2SB934) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For Power switching Complementary to 2SD1257 • Package • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0931 (2SB931) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 Unit: mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 4.4±0.5 10.0±0.3 1.5±0.1 1.5+0 –0.4

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0930A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) VCBO 200 V VCEO 150 V Emitter-base voltage (Collector open)

2SD1255

Abstract: 2SB932
Contextual Info: Power Transistors 2SD1255 2SD1255 Silicon NPN Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SB932 ■ Features • Low collector-em itter saturation voltage V cf (mu • Good linearity of DC c u rre n t gain (hht)

2SD1253

Abstract: 2SD1253A 2SB930 2SB930A DSA003717
Contextual Info: Power Transistors 2SD1253, 2SD1253A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB930 and 2SB930A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 5 V Peak collector current ICP

2SD1258

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1258 Silicon NPN triple diffusion planar type Unit: mm 6.0±0.2 1.0±0.1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

2SD1250

Abstract: 2SD1250A 2SB0928 2SB0928A 2SB928 2SB928A IC1102
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0928 (2SB928), 2SB0928A (2SB928A) Silicon PNP epitaxial planar type For Power amplification For TV vertical deflection output Complementary to 2SD1250 and 2SD1250A Unit : mm

2SB1251

Abstract: 2SD1251A
Contextual Info: Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification Unit: mm • Features 6.0±0.2 1.0±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current Peak collector current Base current

SJD00167CED

Abstract: 2SB0928 2SB0928A 2SB1250 2SD1250 2SD1250A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1250, 2SD1250A Silicon NPN triple diffusion planar type For power amplification For TV vartical deflection output Complementary to 2SB0928, 2SB0928A Unit: mm 6.0±0.2 1.0±0.1

2SB0930

Abstract: 2SB0930A 2SB930 2SB930A 2SD1253 2SD1253A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

2SB0933

Abstract: 2SB933 2SD1256
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0933 (2SB933) Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1256 Unit : mm 6.0±0.2 1.0±0.1 3.0+0.4 –0.2 1.5+0 –0.4 10.0±0.3 1.5±0.1 2 4.4±0.5

2SB0929

Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit

2SD1258

Contextual Info: Power Transistors 2SD1258 2SD1258 Silicon NPN Triple-Diffused Planar Type High DC Current Gain I v e , • Package Dimensions Power Amplifier ■ Features • High DC c u rre n t gain (Iif e ) • Good linearity of DC c u rre n t gain (hra) • “N T y p e” package configuration with a cooling fin for direct soldering