D1415A
Abstract: 2SD1415A d1415
Text: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)
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2SD1415A
2-10R1A
20070701-JA
D1415A
2SD1415A
d1415
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D1415A
Abstract: transistor D1415A 2SD1415A d1415
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
transistor D1415A
2SD1415A
d1415
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2SD1415A
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SD1415A
O-220F
O-220F)
2SD1415A
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D1415A
Abstract: 2SD1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
2SD1415A
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D1415A
Abstract: transistor D1415A d1415 2SD1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
D1415A
transistor D1415A
d1415
2SD1415A
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transistor D1415A
Abstract: No abstract text available
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
transistor D1415A
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2SD1415A
Abstract: 2SD1415 DARLINGTON 3A 100V npn
Text: Inchange Semiconductor Product Specification 2SD1415A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
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2SD1415A
O-220F
O-220F)
VCC45V
2SD1415A
2SD1415
DARLINGTON 3A 100V npn
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transistor D1415A
Abstract: D1415A
Text: 2SD1415A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD1415A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD1415A
2-10R1A
transistor D1415A
D1415A
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D1415A
Abstract: 2SD1415A d1415 TR20
Text: 2SD1415A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ 2SD1415A ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 3 V, IC = 3 A)
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2SD1415A
2-10R1A
D1415A
2SD1415A
d1415
TR20
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B1020A
Abstract: 2SB1020A 2SD1415A
Text: 2SB1020A シリコンPNP三重拡散形 ダーリントン接続 東芝トランジスタ 2SB1020A 通 信 工 業 用 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = −3 V, IC = −3 A)
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2SB1020A
2SD1415A
2-10R1A
20070701-JA
B1020A
2SB1020A
2SD1415A
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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B1020A
Abstract: No abstract text available
Text: 2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type Darlington Power 2SB1020A High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = −3 V, IC = −3 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A)
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2SB1020A
2SD1415A
B1020A
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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2SD1415A
Abstract: 100L
Text: T O S H IB A 2SD1415A 2 S D 1 4 1 5A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D AR LIN G TO N Unit in mm HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • ±0.2 -*03.2 •- 10 ±0.3 . - -I
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2SD1415A
2SD1415A
100L
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2SD1415A
Abstract: No abstract text available
Text: TO SH IBA 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 1 4 1 5A HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0 .3 . 0 3 . 2 ± 0.2 2 .7 ± Q . 2 IP • High DC Current Gain
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2SD1415A
2SD1415A
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2SD1415A
Abstract: No abstract text available
Text: TO SH IBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ±0.3 High DC Current Gain : hFE = 2000 (Min.) (VCE = 3 V, IC = 3 A)
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2SD1415A
2SD1415A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SD1415A 2 S D 1 4 1 5A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH POWER SWITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (Vq e = 3 V, Iç = 3 A)
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2SD1415A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE 2SD1415A TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE D ARLING TO N 3 < ; n i d i R A HIGH POWER SW ITCHING APPLICATIONS H A M M E R DRIVE, PULSE M O TO R DRIVE APPLICATIONS • High DC Current Gain : h p E = 2000 (Min.) (VCE = 3V, Ic = 3 A )
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2SD1415A
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JIS B 0401
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE 2SD1415A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 7 < ;n id i RA Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • . ^ 3.2 ± 0 .2 2_-7±( .2 High DC Current Gain • h ™ = -9nn n iM
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2SD1415A
Temp01
JIS B 0401
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2SB1020A
Abstract: 2SD1415A
Text: TO SH IBA 2SB1020A TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SB1020A HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.3 • High DC Current Gain : hFE = 2000 (Min.) (at VnE = -3 V , IC = -3 A )
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2SB1020A
2SD1415A
2SB1020A
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Untitled
Abstract: No abstract text available
Text: 2SB1020A TOSHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER 7 < ; R i n 7 H A INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 (Min.) (at VCE= -3V , I q = -3A )
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2SB1020A
2SD1415A
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