2SD1616A Search Results

cross reference ic

Abstract: 2SD1616A
Contextual Info: DC COMPONENTS CO., LTD. 2SD1616A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

utc d1616a

Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
Contextual Info: UNISONIC TECHNOLOGIES CO., 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 *Pb-free plating product number: 2SD1616L/2SD1616AL PIN CONFIGURATION PIN NO.

2SB1116A

Abstract: 2SB1116AK 2SD1616A 2sb1116-al 2SB1116AL 2SD1616A-G 2SD1616AG
Contextual Info: 2SB1116A -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Collector Power Dissipation Complementary to 2SD1616A G H 1Emitter 2Collector 3Base

2SD1616A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TO-92 TRANSISTOR NPN FEATURE Power dissipation 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3. BSAE Symbol Parameter Value Units

2SD1616

Abstract: 2SD16116 2SD1616A 2sd1616 datasheet
Contextual Info: 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC 2SD16116 50 60 2SD1616A

2SD1616A

Abstract: transistor 468
Contextual Info: ELECTRONICS MICRO DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. 2SD1616A NPN SILICON TRANSISTOR 4.68 0.18 TO-92B 4.6 (0.18) 12.7 (0.5) min. 3.58 B CE (0.14)

2SD1616

Abstract: 2SD1616A
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TO-92 TRANSISTOR PNP 1. EMITTER FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD1616A

Abstract: 2SD1616AL B200A 2SD1616 2sd1616l-x-t9s-k B300A 2SD1616AL TO-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 TO-92 1 SIP-3 1 TO-92SP *Pb-free plating product number: 2SD1616L/2SD1616AL ORDERING INFORMATION

2SD1616

Abstract: 2SD1616A
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SD1616A

Contextual Info: 2SD1616A 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM： 0.75 W（Tamb=25℃） Collector current ICM： 1 A Collector-base voltage V BR CBO： 120 V Operating and storage junction temperature range

1116a

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility

2SB1116

Abstract: 2SB1116A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SB1116/1116A TRANSISTOR PNP TO-92 FEATURES • High Collector Power Dissipation . · Complementary to 2SD1616/2SD1616A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sb1116

Abstract: 1116a
Contextual Info: 2SB1116/1116A PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High Collector Power Dissipation . Complementary to 2SD1616/2SD1616A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value VEBO Emitter-Base Voltage

2SD1616

Abstract: 2sd1616 datasheet 2sd1616a
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SD1616

Contextual Info: 2SD1616 2SD1616A NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SD1616A TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 1 A ICM: Collector-base voltage 120 V V(BR)CBO:

SD1616A

Abstract: SD-1616 2SD1616 2SD1616A SD1616
Contextual Info: NPN SILICON TRANSISTORS 2SD1616, 2SD 1616A DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of A F amplifier, general purpose application. PACKAGE DIMENSIONS in millimeters • Low Collector Saturation Voltage. FEATURES V c E sa t

Contextual Info: 2SD1616A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO

TRANSISTORS 640 JS

Abstract: LC-1 2SD1616A
Contextual Info: Transistors 2SD1616A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)

2SD1616

Abstract: 2SD1616A
Contextual Info: ST 2SD1616 / 2SD1616A NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be

2SD1616AG

Abstract: 2SD1616AL 2SD1616 2SD1616A 2SD1616-X-AB3-R 2SD161 2SD1616-G 2SD1616A-G XG03
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR „ DESCRIPTION * Audio frequency power amplifier * Medium speed switching Lead-free: 2SD1616L/2SD1616AL Halogen-free: 2SD1616G/2SD1616AG „ ORDERING INFORMATION