2SD195 Search Results

2SD1953

Abstract: EN2507 25073
Contextual Info: Ordering number:EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions • Motor drivers, printer hammer drivers, relay drivers. unit:mm 2009A Features [2SD1953] 8.0 · Darlington connection. · High DC current gain.

2SD1956

Abstract: 2SD1957 ld7a
Contextual Info: V 7. $ /Transistors 2SD1957 2SD1957 NPN v ' ; = i > h -7 > y 'z$ M J M i Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor Sir>4Vi.V^i-r K ~7> • W Fi'+ jilll/D im e nsio n s Unit: mm • *8:1: 1) hFE : hFE= 3 0 0 (Typ.)o 2) Vce (sat) 'o V ce (sat)= 0.2V (Typ.)

Contextual Info: 2SD1956 h "7 > v 7. $ / I ransistors 2SD1956 1 M il£ ? t : f r * ilfllff l/L o w Freq. Power Amp. • v r - y jv :V v ji- 7 - Triple Diffused Planar NPN Silicon Transistor • ^ J K ^ iiE l/D im e n s io n s Unit: mm w * 1) hFE / i S ^ ' : h F E = 300 (Typ.)o

2SD1959

Abstract: 2SB1301 2SD1951 2SD1941 2sd1944 2SD1948 2SD1940 2SD1943 2SD1946 2SD1947
Contextual Info: - 274 - m. 2SD1940 2SD1941 2SD1943 2SD1944 2SD1946 2SD1947 2SD1948 2SD1949 2SD1950 2SD1951 2SD1952 2SD1953 2SD1955 2SD1956 z&umï 2SD1958 2SD1959 2SD1961 2SD1962M 2SD1964 2SD197Q 2SD1971 2SD1972 2SD1974 2SD1975 2SD1976 2SD1977 2SD1978 2SD1979 2SD1981 2SD1983

transistor marking 9D

Abstract: 6129A 2SD1950 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1 9 5 0 is designed fo r general-purpose applications requiring High DC Current Gain. This is suitable fo r all kind o f driving or muting.

transistor D304

Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
Contextual Info: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.

Contextual Info: SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed fo r general-purpose applications requiring High DC C urrent Gain. This is suitable fo r ah k in d o f d riv in g o r m uting. FEATURES •

k1986

Abstract: TC-6129A 6129A 2SD1950
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1950 NPN エピタキシアル形シリコン・トランジスタ 低周波電力増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。

2SD1950

Abstract: C1987 NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics

ie-500

Abstract: smd marking vl 2SD1950 marking VM
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage

nec 2sd381

Abstract: TIP65 MJ4361 2SD608A 2SD382 2SD1459R SD1478 idc2073
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2SD1080 2SD1562 2SD1562 2SD1763 2SD1763 2SD1953 40349 40349L 40349S 40349Vl 40349V2 40349V2 IDC2073 2SC1448 KSC2073 2SC1669 2SC1669 2SC1669R ~~g~~~~o 35 40 2SD1459Q 2SD1459R 2SC1669Y 2SD608 2SB1086A

2SD1950

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1950 is designed f o r general-purpose applications requiring High DC C u rrent Gain. This is suitable fo r ail k in d o f d riv in g o r m uting.

Contextual Info: 2SD1957 2SD2061 Transistors Power Transistor 120V, 7A 2SD1957 1) ^Absolute maximum ratings (T a = 2 5 ‘C ) H ig h D C c u rre n t g a in . (1 6 0 ~ -5 0 0 ) 3) S ym bol L im its U n it C o lle c to r-b a s e v o lta q e V cbo 120 V C o lle c to r-e m ltte r v o lta g e

Contextual Info: 40 E ROHM CO L T D h* "7 > V D 7 f l E f l cm • 000 b 02 S 0 $ / T ransistors ESRHM 2SD1957 7 ^ 3 3 -0 9 Z S fD IS S T y ' j 3 > h 7 > V ^ $ Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • 41-ï ï i' + ii El/Dimensions Unit: mm • W*

2SD1958

Contextual Info: Ordering number:EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions • Excellent tf permitting efficient drive with less internal dissipation. unit:mm

2SD1952

Contextual Info: SILICON TRANSISTOR 2SD1952 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1952 is designed fo r audio frequency power amplifier and switching application, especially in Hybrid integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package

2SD1956

Contextual Info: h ~ 7> y 2SD1956 $/ T r a n s i s t o r s o c n iD ftfi H s t È t f t y i x - ^ N P N v |j 3 > h 7 > v ^ i • v W Triple Diffuseci Planar NPN Silicon Transistor fé à lîJ & ^ ^ J iillIffl/L o w Freq. Power Amp. I w % # \# • ftJ ii'+ iiiE I/D im e n s io n s (Unit: mm

Contextual Info: Transistors IC SMD Type Product specification 2SD1950 Features High dc current gain and good hFE. Low collector saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage

2SD1958

Contextual Info: SavantIC Semiconductor Product Specification 2SD1958 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·TV horizontal deflection output ·High-current switching applications PINNING PIN DESCRIPTION

Contextual Info: Ordering num ber:E N 2 5 0 7 _ 2SD1953 NPN Epitaxial Planar Silicon Transistor 120V/1.5A Driver Applications Applications . Motor drivers, printer hammer drivers, relay drivers Features . Darlington connection . High DC current gain . Low dependence of DC current gain on temperature

Contextual Info: 2SD1957 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

957a

Abstract: MG50G2CL3 2SD1960 MG50G2cl3 toshiba 2SC4328 2sd1111 2SC1841 2SD1577 2SD764 2SD947
Contextual Info: - Sí € a * « Manuf. T y p e No. SANYO S TOSHIBA ZSÜ 336 Ä 2SD 937 3È S MG50G2CL3 2SD 938 3È ~2. MG5 0 G 2 C L 3 2SD 939 3£ $ MG50G2CL3 2SD 940 3K S 2SD 941 2SD 942 S: 3E S: 2 2SD 943 £ $ 2SD 946 fö T 2SD894 2 SO 946B te T 2SD1953 □— A 2SD 949

D304

Abstract: 2SD2061 2SD1957 94L-1016-D304 D301
Contextual Info: Transistors 2SD1957 2SD2061 94L-919–D301 (94L-1016-D304) 315

Contextual Info: Ordering num ber:E N 2549A 2SD1958 NPN Triple Diffused Planar Silicon Transistor TV Horizontal Deflection Output, High-Current Switching Applications Features . Excellent permitting efficient drive with less internal dissipation Absolute Maxima Ratings at Ta=25 C