2SD250 Search Results

Contextual Info: TOSHIBA 2SD2500 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V c b O - 1500 V Low Saturation Voltage : V qe sat = 3 V (Max.) High Speed : tf = 0.35 /us (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

2SD2500

Abstract: 2sd2500 TRANSISTOR equivalent 2-16E3A
Contextual Info: 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV High Voltage Unit: mm : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.35µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

2SD2504

Abstract: 2sd25
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 5.0±0.2 5.1±0.2 • Features 0.7±0.2 ue pl d in

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

TRANSISTOR BJ 001

Abstract: 2SD2500 2-16E3A
Contextual Info: TOSHIBA 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2500 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV 3.0 ±0.3 _ ^ p- O -* ' O I in o r\i rtH L Ih r T*- !— i ft 2.3MAX. RATING 1500 600 5 10 20 5 50 150 -5 5 -1 5 0 UNIT

2SD2504

Contextual Info: Transistors 2SD2504 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

2SD2504

Contextual Info: Transistors 2SD2504 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 2.90+0.20 –0.05 • Absolute Maximum Ratings Ta = 25°C Unit Collector to base voltage VCBO 15 V Collector to emitter voltage

2SD2500

Abstract: 2-16E3A
Contextual Info: 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT COLOR TV l High Voltage Unit: mm : VCBO = 1500 V l Low Saturation Voltage : VCE sat = 3 V (Max.) l High Speed : tf = 0.35µs (Typ.) l Collector Metal (Fin) is Fully Covered with Mold Resin.

2SD2500

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD2500 Features • • • NPN Silicon Power Transistors With TO-3P H IS package High voltage, high speed switching NPN transistors Horizontal deflection output for color TV

2SD2504

Contextual Info: Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE sat • Large collector current IC 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: T O SH IB A TENTATIVE 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD25QQ Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV • High Voltage : V c b o = 1500V • Low Saturation Voltage 15.5 + 0-5 03.6 ±0.3 .3.0+ 0.3 : VCE sat = 3V(Max.)

2sd2500 TRANSISTOR equivalent

Abstract: 2SD2500 equivalent 2SD2500 NPN Transistor 1500V transistor TV power transistor datasheet NPN Transistor 1.5A 5V Horizontal-Deflection Output Transistors transistor for horizontal deflection output transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2500 DESCRIPTION •High Breakdown Voltage: VCBO= 1500V Min ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for Color TV horizontal deflection output

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2504 Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm 5.0±0.2 4.0±0.2 0.7±0.1 5.1±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

d2500 transistor

Abstract: TRANSISTOR D2500 toshiba marking code transistor 2-16E3A package D2500 2SD2500 2SD2500 equivalent 2sd2500 TRANSISTOR equivalent 2-16E3A
Contextual Info: 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE sat = 3 V (Max.) High Speed : tf = 0.35µs (Typ.) Unit: mm Collector Metal (Fin) is Fully Covered with Mold Resin.

d2500 transistor

Abstract: TRANSISTOR D2500 2SD2500 2sd2500 TRANSISTOR equivalent 2-16E3A D2500
Contextual Info: 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2500 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TVs z High Voltage : VCBO = 1500 V z Low Saturation Voltage : VCE sat = 3 V (Max.) z High Speed : tf = 0.35µs (Typ.) Unit: mm z Collector Metal (Fin) is Fully Covered with Mold Resin.

Contextual Info: Transistors 2SD2504 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector to emitter saturation voltage VCE sat • Large collector current IC 0.7±0.2 • Features 12.9±0.5 0.7±0.1

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SC5858

Abstract: transistor c5858 c5858 2sc5570 C5446 S2055n 2sc 5587 2SC5588 2SC5587 2SC5859
Contextual Info: 1 Horizontal – Deflection – Output Power Transistors February 2005 TOSHIBA CORPORATION Semiconductor Company Discrete Semiconductor Division Transistors DP0540034_01 2 High Voltage TR for TV / Monitor 1. Progressive/ High Vision/Digital TV Part Number

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,